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COMMERCIAL DRAM 566

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48LC8M16LFTG-75M:G by Micron Technology

MT48LC8M16LFTG-75M:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.00045 Amp

DRAMs

130 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M8A2P-75:G by Micron Technology

MT48LC8M8A2P-75:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

210 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC8M8A2P-75L:G by Micron Technology

MT48LC8M8A2P-75L:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

210 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M8A2TG-75L:G by Micron Technology

MT48LC8M8A2TG-75L:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

210 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48V4M32LFB5-8:G by Micron Technology

MT48V4M32LFB5-8:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8/2.5,2.5

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00045 Amp

DRAMs

150 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48V4M32LFF5-10:G by Micron Technology

MT48V4M32LFF5-10:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

100 MHz

COMMON

1,2,4,8

R-PBGA-B90

e0

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8/2.5,2.5

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00045 Amp

DRAMs

120 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48V8M16LFB4-8:G by Micron Technology

MT48V8M16LFB4-8:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8/2.5,2.5

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00045 Amp

DRAMs

130 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48V8M16LFF4-10:G by Micron Technology

MT48V8M16LFF4-10:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

100 MHz

COMMON

1,2,4,8

S-PBGA-B54

e0

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8/2.5,2.5

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00045 Amp

DRAMs

100 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC128M4A2TG-7E:C by Micron Technology

MT48LC128M4A2TG-7E:C

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

536870912 bit

SYNCHRONOUS DRAM

4

1

1

54

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0035 Amp

DRAMs

255 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT36HTF51272PZ-667H1 by Micron Technology

MT36HTF51272PZ-667H1

Micron Technology

Micron Technology's MT36HTF51272PZ-667H1 is a 512MX72 DDR DRAM MODULE with synchronous operation, self-refresh capability, and 333 MHz clock frequency. Ideal for commercial applications requiring high memory density and fast access times.

DUAL BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.252 Amp

Other Memory ICs

5160 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

30.175 mm

MT48LC4M16A2TG-75L:G by Micron Technology

MT48LC4M16A2TG-75L:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

210 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M8A2TG-7EL:G by Micron Technology

MT48LC8M8A2TG-7EL:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

230 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT46V16M8TG-75:D by Micron Technology

MT46V16M8TG-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

134217728 bit

DDR1 DRAM

8

1

1

66

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

4096

1.2 mm

YES

2,4,8

.003 Amp

DRAMs

325 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT48LC32M4A2P-7E:G by Micron Technology

MT48LC32M4A2P-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

4

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX4

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC32M4A2TG-75L:G by Micron Technology

MT48LC32M4A2TG-75L:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

4

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX4

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

310 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT18HVF25672PZ-667H1 by Micron Technology

MT18HVF25672PZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

18.05 mm

YES

.126 Amp

DRAMs

3330 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

17.9 mm

MT46V16M16FG-6L:F by Micron Technology

MT46V16M16FG-6L:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PBGA-B60

e0

14 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

440 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

8 mm

MT46V16M16P-6TL:F by Micron Technology

MT46V16M16P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

440 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT48H4M32LFB56:K by Micron Technology

MT48H4M32LFB56:K

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B90

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0002 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

13 mm

MT48LC64M4A2P-75L:D by Micron Technology

MT48LC64M4A2P-75L:D

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

4

1

1

54

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX4

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC4M32LFF5-8:G by Micron Technology

MT48LC4M32LFF5-8:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

R-PBGA-B90

e0

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00045 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC2M32B2P-7:GTR by Micron Technology

MT48LC2M32B2P-7:GTR

Micron Technology

MT48LC2M32B2P-7:GTR by Micron Technology is a 2MX32 Synchronous DRAM with a memory density of 67108864 bit. It operates at a max temperature of 70°C and has a supply voltage range of 3V to 3.6V. This memory IC is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT46V64M8TG-75Z:D by Micron Technology

MT46V64M8TG-75Z:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT36LSDF12872G-133D1 by Micron Technology

MT36LSDF12872G-133D1

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XDMA-N168

e0

9663676416 bit

SYNCHRONOUS DRAM MODULE

72

1

1

168

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

NO LEAD

DUAL

MT48LC8M16A2B4-75:G by Micron Technology

MT48LC8M16A2B4-75:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

310 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT18LSDT6472G-133D2 by Micron Technology

MT18LSDT6472G-133D2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Ports: 1;

SINGLE BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XDMA-N168

e0

4831838208 bit

SYNCHRONOUS DRAM MODULE

72

1

1

168

67108864 words

64M

SYNCHRONOUS

55 Cel

0 Cel

64MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

NO LEAD

DUAL

MT18KSF1G72PDZ-1G6N1 by Micron Technology

MT18KSF1G72PDZ-1G6N1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.283 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT46V128M4BN-6:F by Micron Technology

MT46V128M4BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

4

1

1

60

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX4

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16BN-5B:F by Micron Technology

MT46V32M16BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-5B:F by Micron Technology

MT46V32M16FN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16FN-6:F by Micron Technology

MT46V32M16FN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V32M16P-5B:F by Micron Technology

MT46V32M16P-5B:F

Micron Technology

Micron Technology's MT46V32M16P-5B:F is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast memory access and high data transfer rates in commercial-grade devices.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6T:F by Micron Technology

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

3

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6TL:F by Micron Technology

MT46V32M16P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16TG-5B:F by Micron Technology

MT46V32M16TG-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16TG-6T:F by Micron Technology

MT46V32M16TG-6T:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8BN-5B:F by Micron Technology

MT46V64M8BN-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

10 mm

MT46V64M8BN-6:F by Micron Technology

MT46V64M8BN-6:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8BN-6L:F by Micron Technology

MT46V64M8BN-6L:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8P-5B:F by Micron Technology

MT46V64M8P-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6T:F by Micron Technology

MT46V64M8P-6T:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6TL:F by Micron Technology

MT46V64M8P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8TG-6TL:F by Micron Technology

MT46V64M8TG-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT72KSZS2G72PZ-1G1D1 by Micron Technology

MT72KSZS2G72PZ-1G1D1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.3 ns

AUTO/SELF REFRESH

533 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

154618822656 bit

DDR3L DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

4 mm

YES

.864 Amp

DRAMs

7130 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

30.175 mm

MT46H8M16LFCF-10 by Micron Technology

MT46H8M16LFCF-10

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

2,4,8

R-PBGA-B60

e1

10 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8

.0002 Amp

DRAMs

100 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H8M16LFCF-75 by Micron Technology

MT46H8M16LFCF-75

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

10 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8

.0002 Amp

DRAMs

105 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46V128M8P-6T:A by Micron Technology

MT46V128M8P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

8

3

1

1

66

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V256M4P-6T:A by Micron Technology

MT46V256M4P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

4

1

1

66

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm