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COMMERCIAL DRAM 566

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46V64M16P-6T:A by Micron Technology

MT46V64M16P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

535 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16P-75:A by Micron Technology

MT46V64M16P-75:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

495 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT48H4M16LFB4-8:H by Micron Technology

MT48H4M16LFB4-8:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

60 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC2M32B2B5-7:G by Micron Technology

MT48LC2M32B2B5-7:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

225 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT72JSZS2G72PZ-1G1D1 by Micron Technology

MT72JSZS2G72PZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

533 MHz

COMMON

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

30.5 mm

YES

DRAMs

6732 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

30 mm

MT8HTF12864AZ-800H1 by Micron Technology

MT8HTF12864AZ-800H1

Micron Technology

DDR2 DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

R-XDMA-N240

e4

8589934592 bit

DDR2 DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

YES

DRAMs

1680 mA

1.8

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

MT9JSF25672AZ-1G1D1 by Micron Technology

MT9JSF25672AZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.3 ns

AUTO/SELF REFRESH

533 MHz

COMMON

R-XDMA-N240

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

YES

.108 Amp

Other Memory ICs

2880 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT46H16M16LFBF-75:A by Micron Technology

MT46H16M16LFBF-75:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PBGA-B60

e1

9 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48H8M16LFB4-8:J by Micron Technology

MT48H8M16LFB4-8:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 8M;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

IS43R16320D-6BL by Integrated Silicon Solution

IS43R16320D-6BL

Integrated Silicon Solution

IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PBGA-B60

e1

13 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.025 Amp

DRAMs

370 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT36KDZS1G72PZ-1G4D1 by Micron Technology

MT36KDZS1G72PZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-XDMA-N240

e4

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

YES

.432 Amp

Other Memory ICs

7236 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

MT4HTF6464AZ-667H1 by Micron Technology

MT4HTF6464AZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N240

e3

133.35 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

1

240

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.028 Amp

DRAMs

920 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

30.175 mm

AS4C4M16SA-7TCNTR by Alliance Memory

AS4C4M16SA-7TCNTR

Alliance Memory

AS4C4M16SA-7TCNTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization and 16-bit memory width. Operating at temperatures from 0 to 70°C, it features self-refresh mode and offers a memory density of 67108864 bits. Ideal for applications requiring fast access times and high memory capacity in compact spaces.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

3

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin (Sn)

GULL WING

.8 mm

DUAL

10.16 mm

MT46V16M16CY-5B:KTR by Micron Technology

MT46V16M16CY-5B:KTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

260

1.2 mm

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

8 mm

MT16LSDF6464HY-133G1 by Micron Technology

MT16LSDF6464HY-133G1

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: ZIG-ZAG;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

67.585 mm

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

67108864 words

64M

SYNCHRONOUS

65 Cel

0 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

31.88 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

NO LEAD

.8 mm

ZIG-ZAG

30

3.8 mm

MT18KDF2G72AZ-1G6A1 by Micron Technology

MT18KDF2G72AZ-1G6A1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.235 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

154618822656 bit

DDR DRAM MODULE

72

1

1

240

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.45 V

1.235 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT4VDDT1664HY-335M1 by Micron Technology

MT4VDDT1664HY-335M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 16M;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

1073741824 bit

DDR DRAM MODULE

64

1

1

200

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.9 mm

YES

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

2.45 mm

MT72JSZS4G72LZ-1G9N1A7 by Micron Technology

MT72JSZS4G72LZ-1G9N1A7

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;

FOUR BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

309237645312 bit

DDR DRAM MODULE

72

1

1

240

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

7.55 mm

MT48LC32M8A2P-7E:G by Micron Technology

MT48LC32M8A2P-7E:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT9KSF51272AZ-1G6P1 by Micron Technology

MT9KSF51272AZ-1G6P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

IS42S16100H-7BL by Integrated Silicon Solution

IS42S16100H-7BL

Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.

DUAL BANK PAGE BURST

5.5 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B60

10.1 mm

16777216 bit

SYNCHRONOUS DRAM

16

1

1

60

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,7X15,25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

2048

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

60 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.65 mm

BOTTOM

6.4 mm

MT18KSF1G72HZ-1G6P1 by Micron Technology

MT18KSF1G72HZ-1G6P1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XZMA-N204

67.6 mm

77309411328 bit

DDR3L DRAM MODULE

72

1

1

204

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT18KSF1G72PZ-1G6P1 by Micron Technology

MT18KSF1G72PZ-1G6P1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR3L DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT9KSF51272HZ-1G6P1 by Micron Technology

MT9KSF51272HZ-1G6P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XZMA-N204

67.6 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT8KTF51264AZ-1G9P1 by Micron Technology

MT8KTF51264AZ-1G9P1

Micron Technology

Micron Technology's MT8KTF51264AZ-1G9P1 is a 512MX64 DDR3 DRAM with 64-bit memory width. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package has 240 terminals and supports single bank page burst access mode.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

34359738368 bit

DDR3 DRAM

64

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT9KDF51272AZ-1G6P1 by Micron Technology

MT9KDF51272AZ-1G6P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 512MX72;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT8HTF12864AZ-667H1 by Micron Technology

MT8HTF12864AZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH; WD-MAX

333 MHz

COMMON

R-XDMA-N240

133.35 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

DRAMs

1480 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT8JTF12864AZ-1G4G1 by Micron Technology

MT8JTF12864AZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

667 MHz

COMMON

R-XDMA-N240

133.35 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

30.5 mm

YES

.096 Amp

DRAMs

3920 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT18KSF1G72PDZ-1G6P1 by Micron Technology

MT18KSF1G72PDZ-1G6P1

Micron Technology

DDR3 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR3 DRAM

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

NOT SPECIFIED

4 mm

MT18KSF1G72AZ-1G6P1 by Micron Technology

MT18KSF1G72AZ-1G6P1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR3L DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.235 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT40A1G4RH-075E:B by Micron Technology

MT40A1G4RH-075E:B

Micron Technology

DDR4 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT40A256M16GE-075E:B by Micron Technology

MT40A256M16GE-075E:B

Micron Technology

Micron Technology's MT40A256M16GE-075E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in commercial-grade environments.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT40A512M8RH-075E:B by Micron Technology

MT40A512M8RH-075E:B

Micron Technology

DDR4 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT16HTF25664HZ-800M1 by Micron Technology

MT16HTF25664HZ-800M1

Micron Technology

Micron Technology's MT16HTF25664HZ-800M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. Operating at 1.8V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular microelectronic assembly has a dual bank page burst access mode.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT18KDF1G72PDZ-1G6P1 by Micron Technology

MT18KDF1G72PDZ-1G6P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT4KTF25664AZ-1G9P1 by Micron Technology

MT4KTF25664AZ-1G9P1

Micron Technology

DDR3L DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Width: 2.7 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

17179869184 bit

DDR3L DRAM MODULE

64

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT18JSF1G72AZ-1G9P1 by Micron Technology

MT18JSF1G72AZ-1G9P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.5;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT18KDF1G72AZ-1G6P1 by Micron Technology

MT18KDF1G72AZ-1G6P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.9 mm

YES

1.45 V

1.235 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT4KTF25664HZ-1G9P1 by Micron Technology

MT4KTF25664HZ-1G9P1

Micron Technology

Micron Technology's MT4KTF25664HZ-1G9P1 is a DDR3L DRAM MODULE with 256MX64 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and single bank page burst access mode. Ideal for commercial applications requiring high memory density and reliable performance in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

R-XZMA-N204

67.6 mm

17179869184 bit

DDR3L DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

30

3.8 mm

MT8KTF25664HZ-1G4M1 by Micron Technology

MT8KTF25664HZ-1G4M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

667 MHz

COMMON

R-XZMA-N204

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

1640 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT46V8M16P6TDTR by Micron Technology

MT46V8M16P6TDTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2.7 V;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

22.22 mm

134217728 bit

DDR1 DRAM

16

1

1

66

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT48LC16M16A2B4-7E:GTR by Micron Technology

MT48LC16M16A2B4-7E:GTR

Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and operates at 3.3V. It features self-refresh mode, very thin profile package style, and supports four bank page burst access mode. Ideal for commercial applications requiring fast data processing in a compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT9JSF51272AZ-1G9P1 by Micron Technology

MT9JSF51272AZ-1G9P1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.5;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT8KTF51264HZ-1G9P1 by Micron Technology

MT8KTF51264HZ-1G9P1

Micron Technology

MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

R-XZMA-N204

67.6 mm

34359738368 bit

DDR3L DRAM MODULE

64

1

1

204

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.45 mm

ZIG-ZAG

30

3.8 mm

MT48LC8M16A2P-7E:GTR by Micron Technology

MT48LC8M16A2P-7E:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

3

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48H16M32LFCM-75:ATR by Micron Technology

MT48H16M32LFCM-75:ATR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT48LC16M16A2P-75:DTR by Micron Technology

MT48LC16M16A2P-75:DTR

Micron Technology

MT48LC16M16A2P-75:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring fast and reliable memory performance in a small outline package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M32B2P-6:GTR by Micron Technology

MT48LC4M32B2P-6:GTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, offering 134217728-bit memory density and 5.5ns max access time. Ideal for commercial applications requiring fast and efficient memory operations in a compact small outline package.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

10.16 mm