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MT18HVS25672PKZ-80EH1

Micron Technology

MT18HVS25672PKZ-80EH1 by Micron Technology

Micron Technology's MT18HVS25672PKZ-80EH1 is a 256MX72 DDR2 DRAM MODULE with 19327352832-bit memory density. Operating at 1.8V, it features synchronous mode and dual bank page burst access for commercial applications. The rectangular microelectronic assembly has a temperature range of 0-70°C, making it suitable for various memory-intensive tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 22,100 parts In-Stock

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Vyrian

USA . 2,019 parts In-Stock

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2,019

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Digiode

USA . 122 parts In-Stock

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122

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,670 parts In-Stock

1+ parts

$6.000

100+ parts

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1k+ parts

$5.760

10k+ parts

$5.760

1,670

$6.000

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$5.760

$5.760

AZTECH Wire

Italy . 1,197 parts In-Stock

1+ parts

$9.690

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1,197

$9.690

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Ampacity Inc.

Singapore . 951 parts In-Stock

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$28.000

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951

$28.000

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Corphita

USA . 688 parts In-Stock

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688

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Enhance your system's performance with the MT18HVS25672PKZ-80EH1 by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality DRAM solutions that excel in reliability and efficiency. Ideal for a wide range of applications, this DDR2 DRAM MODULE offers customers unmatched value, benefits, and advantages. Upgrade your technology with Micron Technology and experience the difference in performance today.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular package shape allows for easy insertion and placement in compatible devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a precise timing, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Optimal supply voltage of 1.8V helps maintain stable and efficient power consumption.

No. of Terminals: 244

Higher number of terminals provide more connectivity options and flexibility in system integration.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly packaging ensures compact design and efficient use of space.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance allows for reliable performance in various environmental conditions.

Organization: 256MX72

Organized in 256MX72 configuration for efficient data processing and storage capabilities.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures functionality even in cold environments.

Terminal Finish: GOLD

Gold terminal finish provides excellent conductivity and resistance to corrosion, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for enhanced stability and connectivity in the device.

Maximum Seated Height: 3.8 mm

Low maximum seated height enables compatibility with slim and compact devices.

Width: 18.2 mm

Compact width dimension allows for easy integration in space-constrained systems.

Minimum Supply Voltage (Vsup): 1.7 V

Low minimum supply voltage ensures efficient power usage and minimal energy consumption.

Length: 82 mm

A length of 82mm provides flexibility in installation and compatibility with various devices.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable performance in standard operating conditions.

Access Mode: DUAL BANK PAGE BURST

Dual bank page burst access mode enhances data retrieval speed and efficiency.

Technology: CMOS

CMOS technology offers efficient power consumption and high-speed operation.

Terminal Form: NO LEAD

Lead-free terminal form ensures environmental friendliness and compliance with regulations.

No. of Words: 268435456 words

High word count allows for extensive data storage and processing capabilities.

Memory Width: 72

Memory width of 72 bits enables efficient data transfer and processing.

No. of Words Code: 256M

256M word code provides ample memory capacity for storing large amounts of data.

Maximum Supply Voltage (Vsup): 1.9 V

Slightly higher maximum supply voltage ensures stable performance under varying conditions.

Memory Density: 19327352832 bit

High memory density of 19327352832 bits enables efficient data storage and retrieval.

Memory IC Type: DDR2 DRAM MODULE

DDR2 DRAM module offers fast data transfer speeds and reliable performance for various applications.

Technical Specifications

DRAM MT18HVS25672PKZ-80EH1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO REFRESH

JESD-30 Code:

R-XDMA-N244

JESD-609 Code:

e4

Length:

82 mm

Memory Density:

19327352832 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

244

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Seated Height:

3.8 mm

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Width:

18.2 mm

Trade Compliance

MT18HVS25672PKZ-80EH1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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