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COMMERCIAL DRAM 566

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT8HTF12864HZ-667H1 by Micron Technology

MT8HTF12864HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

333 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

2240 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8HTF12864HZ-800H1 by Micron Technology

MT8HTF12864HZ-800H1

Micron Technology

Micron Technology's MT8HTF12864HZ-800H1 is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory density of 8589934592 bits. Ideal for applications requiring high-speed synchronous memory access in commercial temperature environments.

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

2680 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8JSF25664HZ-1G1D1 by Micron Technology

MT8JSF25664HZ-1G1D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

533 MHz

COMMON

R-XZMA-N204

e3

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

2560 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT8JSF25664HZ-1G4D1 by Micron Technology

MT8JSF25664HZ-1G4D1

Micron Technology

Micron Technology's MT8JSF25664HZ-1G4D1 is a 256MX64 DDR DRAM MODULE with 667 MHz clock frequency. Operating at 1.5V, it offers 8192 refresh cycles and features a single bank page burst access mode. Ideal for commercial applications requiring high-speed memory performance in microelectronic assemblies.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

R-PDMA-N204

e3

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

2920 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

30 mm

MT9HTF12872AZ-667H1 by Micron Technology

MT9HTF12872AZ-667H1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e3

9663676416 bit

72

1

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

2520 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9HTF12872AZ-80EH1 by Micron Technology

MT9HTF12872AZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

9663676416 bit

72

1

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

2250 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9HTF6472PKZ-667G1 by Micron Technology

MT9HTF6472PKZ-667G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N244

e3

4831838208 bit

DDR DRAM MODULE

72

1

244

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

DRAMs

1260 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT9HVF12872PZ-80EH1 by Micron Technology

MT9HVF12872PZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

9663676416 bit

72

1

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1890 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9HVF6472PZ-667G1 by Micron Technology

MT9HVF6472PZ-667G1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e3

4831838208 bit

72

1

240

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9JSF25672AZ-1G4D1 by Micron Technology

MT9JSF25672AZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.255 ns

SELF REFRESH; WD-MAX

667 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

30.5 mm

YES

.108 Amp

Other Memory ICs

3285 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

2.7 mm

MT16JTF25664HZ-1G4G1 by Micron Technology

MT16JTF25664HZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

e3

17179869184 bit

DDR DRAM MODULE

64

1

204

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.192 Amp

DRAMs

4016 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT16JTF25664HZ-1G6G1 by Micron Technology

MT16JTF25664HZ-1G6G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

800 MHz

COMMON

R-PDMA-N204

e3

17179869184 bit

DDR DRAM MODULE

64

1

204

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.192 Amp

DRAMs

4896 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT8JTF12864HZ-1G4G1 by Micron Technology

MT8JTF12864HZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.255 ns

667 MHz

COMMON

R-PDMA-N204

e3

8589934592 bit

DDR DRAM MODULE

64

1

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.096 Amp

DRAMs

3920 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT8JTF12864HZ-1G6G1 by Micron Technology

MT8JTF12864HZ-1G6G1

Micron Technology

Micron Technology's MT8JTF12864HZ-1G6G1 is a 128MX64 DDR DRAM MODULE with 204 terminals, operating at 800 MHz. It has a memory density of 8589934592 bits and supports a max clock frequency of 800 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.

.225 ns

800 MHz

COMMON

R-PDMA-N204

e3

8589934592 bit

DDR DRAM MODULE

64

1

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.096 Amp

DRAMs

4800 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT16KTF51264AZ-1G4M1 by Micron Technology

MT16KTF51264AZ-1G4M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; Package Code: DIMM; Width: 4 mm; Organization: 512MX64; Length: 133.35 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

133.35 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

DIMM

30.5 mm

YES

1.45 V

1.283 V

1.35

CMOS

COMMERCIAL

4 mm

MT8JTF25664HZ-1G4M1 by Micron Technology

MT8JTF25664HZ-1G4M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; Package Code: DIMM; Access Mode: SINGLE BANK PAGE BURST; Maximum Seated Height: 30.15 mm; No. of Functions: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

DIMM

30.15 mm

YES

1.575 V

1.425 V

1.5

CMOS

COMMERCIAL

3.8 mm

MT48LC4M16A2P-75:GTR by Micron Technology

MT48LC4M16A2P-75:GTR

Micron Technology

Micron Technology's MT48LC4M16A2P-75:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 70°C max temp. It features self-refresh mode, small outline package, and dual terminal position. Ideal for commercial applications requiring fast access time and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

3

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

80 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT16LSDF6464HY-13EG1 by Micron Technology

MT16LSDF6464HY-13EG1

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 67.585 mm;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

e4

67.585 mm

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

67108864 words

64M

SYNCHRONOUS

65 Cel

0 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

31.88 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

.8 mm

ZIG-ZAG

30

3.8 mm

TMS4030JL by Texas Instruments

TMS4030JL

Texas Instruments

TMS4030JL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 300ns max access time, and 64 refresh cycles. It has separate I/O type and operates in commercial temperature range. Ideal for applications requiring low-power memory solutions in industrial electronics.

300 ns

SEPARATE

R-XDIP-T22

4096 bit

1

22

4096 words

4K

70 Cel

0 Cel

4KX1

3-STATE

CERAMIC

DIP

DIP22,.4

RECTANGULAR

IN-LINE

NOT SPECIFIED

Not Qualified

64

Other Memory ICs

60 mA

NO

MOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

TMS45169-70DZ by Texas Instruments

TMS45169-70DZ

Texas Instruments

TMS45169-70DZ by Texas Instruments is a 256Kx16 EDO DRAM with 70ns access time, 512 refresh cycles, and 3-STATE output. It operates at a voltage of 5V and has a max standby current of 0.001A. Commonly used in commercial applications requiring high-speed memory solutions.

70 ns

COMMON

R-PDSO-J40

4194304 bit

EDO DRAM

16

40

262144 words

256K

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

YES

.001 Amp

DRAMs

160 mA

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

MT16HTF51264HZ-800C1 by Micron Technology

MT16HTF51264HZ-800C1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

200

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

DRAMs

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

IS42S16800F-6TL by Integrated Silicon Solution

IS42S16800F-6TL

Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports common I/O type. Ideal for commercial applications requiring fast memory access and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS42S16800F-7BL by Integrated Silicon Solution

IS42S16800F-7BL

Integrated Silicon Solution

IS42S16800F-7BL by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 143 MHz clock frequency. It operates at 3.3V, has a memory density of 134217728 bits, and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT18VDDT12872AY-40BF1 by Micron Technology

MT18VDDT12872AY-40BF1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XDMA-N184

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

DRAMs

4095 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

4 mm

MT4JTF25664AZ-1G6E1 by Micron Technology

MT4JTF25664AZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT18JSF51272PKZ-1G4K1 by Micron Technology

MT18JSF51272PKZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 82 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

82 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT48H16M16LFBF-6:H by Micron Technology

MT48H16M16LFBF-6:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H16M16LFBF-75:H by Micron Technology

MT48H16M16LFBF-75:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H8M32LFB5-6:H by Micron Technology

MT48H8M32LFB5-6:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

13 mm

MT48H8M32LFB5-75:H by Micron Technology

MT48H8M32LFB5-75:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

13 mm

MT4JTF25664HZ-1G6E1 by Micron Technology

MT4JTF25664HZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N204

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT4KTF25664HZ-1G6E1 by Micron Technology

MT4KTF25664HZ-1G6E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N204

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.15 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

30

3.8 mm

MT9KDF51272AZ-1G4E1 by Micron Technology

MT9KDF51272AZ-1G4E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.35;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

2.7 mm

MT16LSDF3264HY-13EG4 by Micron Technology

MT16LSDF3264HY-13EG4

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N144

e4

67.585 mm

2147483648 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

33554432 words

32M

SYNCHRONOUS

65 Cel

0 Cel

32MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.88 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

3.8 mm

MT16VDDF12864HY-40BF2 by Micron Technology

MT16VDDF12864HY-40BF2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

.08 Amp

DRAMs

5520 mA

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT4VDDT3264HY-335F2 by Micron Technology

MT4VDDT3264HY-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

2147483648 bit

DDR DRAM MODULE

64

1

1

200

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

31.9 mm

YES

DRAMs

1620 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT4VDDT3264HY-40BJ1 by Micron Technology

MT4VDDT3264HY-40BJ1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

2147483648 bit

DDR DRAM MODULE

64

1

1

200

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

DRAMs

1920 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT16JTF51264AZ-1G6K1 by Micron Technology

MT16JTF51264AZ-1G6K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.575 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT18JSF51272AZ-1G6K1 by Micron Technology

MT18JSF51272AZ-1G6K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Self Refresh: YES;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT36JSF1G72PZ-1G4K1 by Micron Technology

MT36JSF1G72PZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED;

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

77309411328 bit

DDR DRAM MODULE

72

1

1

240

1073741824 words

1G

SYNCHRONOUS

70 Cel

0 Cel

1GX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

4 mm

MT36JSZF51272PDZ-1G1G1 by Micron Technology

MT36JSZF51272PDZ-1G1G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT9JBF25672AKZ-1G4K1 by Micron Technology

MT9JBF25672AKZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Seated Height: 17.91 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N244

82 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

244

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

17.91 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT18HVF51272PDZ-80EC1 by Micron Technology

MT18HVF51272PDZ-80EC1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

e4

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

18.05 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

4 mm

MT18JSF51272PDZ-1G6K1 by Micron Technology

MT18JSF51272PDZ-1G6K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Length: 133.35 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

e4

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

4 mm

MT9JSF25672AZ-1G4K1 by Micron Technology

MT9JSF25672AZ-1G4K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.425 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

2.7 mm

MT48LC16M8A2BB-6A:L by Micron Technology

MT48LC16M8A2BB-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PBGA-B60

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC16M8A2P-6A:L by Micron Technology

MT48LC16M8A2P-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm