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MT8HTF12864HZ-800H1

Micron Technology

MT8HTF12864HZ-800H1 by Micron Technology

Micron Technology's MT8HTF12864HZ-800H1 is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory density of 8589934592 bits. Ideal for applications requiring high-speed synchronous memory access in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,800 parts In-Stock

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20,800

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Vyrian

USA . 6,253 parts In-Stock

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Digiode

USA . 2,162 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Bristol Electronics

USA . 9 parts In-Stock

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Touchstone Systems

USA . 9 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,138 parts In-Stock

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$15.000

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$15.000

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AZTECH Wire

Italy . 832 parts In-Stock

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$15.670

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832

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Corphita

USA . 1,866 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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100

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Perfect Parts

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ChipTracer

USA . 9 parts In-Stock

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Overview

Elevate your system's performance with the MT8HTF12864HZ-800H1 by Micron Technology. Embrace the reliability and expertise of a leading manufacturer in the industry while enjoying the seamless operation of this high-quality DRAM module. Ideal for a wide range of applications, this synchronous memory offers unparalleled value and benefits to customers seeking to enhance their computing experience. Upgrade to Micron Technology and unlock a world of possibilities for your technology needs.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and placement in devices.

Operating Mode: SYNCHRONOUS

Synchronous operation enables data to be transmitted at fixed intervals, resulting in faster and more reliable performance.

Self Refresh: YES

Self-refresh capability allows the DRAM to maintain data without external intervention, improving power efficiency.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a standard voltage level, reducing the risk of damage due to voltage fluctuations.

Maximum Clock Frequency (fCLK): 400 MHz

High clock frequency enables quick data transfer and processing, making it suitable for demanding applications.

Technology: CMOS

CMOS technology provides low power consumption, extending the battery life of devices.

Technical Specifications

DRAM MT8HTF12864HZ-800H1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

SELF REFRESH; WD-MAX

Maximum Clock Frequency (fCLK):

400 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XZMA-N200

JESD-609 Code:

e3

Length:

67.6 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

64

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX64

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

DIMM200,24

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Standby Current:

.056 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

2680 mA

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.6 mm

Terminal Position:

ZIG-ZAG

Width:

3.8 mm

Trade Compliance

MT8HTF12864HZ-800H1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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