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IS42S16800F-7BL

Integrated Silicon Solution

IS42S16800F-7BL by Integrated Silicon Solution

IS42S16800F-7BL by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 143 MHz clock frequency. It operates at 3.3V, has a memory density of 134217728 bits, and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

Median Price

$2.870

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 324 parts In-Stock

1+ parts

$2.870

100+ parts

$2.270

1k+ parts

$2.180

10k+ parts

$1.980

324

$2.870

$2.270

$2.180

$1.980

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.393

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$2.393

-

-

-

NexGen Digital

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50,000

-

-

-

-

Sensible Micro Corp

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,000

-

-

-

-

Vyrian

USA . 324 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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324

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 100 parts In-Stock

1+ parts

$2.345

100+ parts

-

1k+ parts

$2.251

10k+ parts

-

100

$2.345

-

$2.251

-

AZTECH Wire

Italy . 768 parts In-Stock

1+ parts

$14.900

100+ parts

-

1k+ parts

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10k+ parts

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768

$14.900

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Overview

Experience unparalleled performance and reliability with the IS42S16800F-7BL by Integrated Silicon Solution. As a leading manufacturer of high-quality DRAM products, ISS offers top-notch solutions for various applications. With its advanced technology and innovative design, this memory module ensures seamless operation and efficient data processing. Upgrade your system today and enjoy the benefits of faster speeds, improved functionality, and increased productivity. Trust ISS to deliver exceptional quality and performance for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for mobile devices and other portable electronics.

Surface Mount: YES

The surface mount feature allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Package Shape: SQUARE

The square package shape ensures uniform distribution of components, optimizing signal integrity and performance.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for precise control and synchronization of data transfer, improving overall system efficiency.

Self Refresh: YES

The self-refresh capability reduces power consumption by automatically refreshing the data, extending battery life and enhancing energy efficiency.

Input/Output Type: COMMON

The common input/output type simplifies interface connections and compatibility with a wide range of systems and devices.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides stable power delivery, ensuring consistent performance and reliability.

Power Supplies (V): 3.3

The power supply of 3.3V is standard and widely supported, making this product versatile and easy to integrate into various applications.

No. of Terminals: 54

The 54 terminals offer ample connectivity options, allowing for flexible configurations and compatibility with different setups.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array package style with thin profile and fine pitch design optimizes signal transmission and enhances thermal management for improved performance.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand higher temperature environments, suitable for industrial and automotive applications.

Technical Specifications

DRAM IS42S16800F-7BL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS42S16800F-7BL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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