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MT8JSF25664HZ-1G4D1

Micron Technology

MT8JSF25664HZ-1G4D1 by Micron Technology

Micron Technology's MT8JSF25664HZ-1G4D1 is a 256MX64 DDR DRAM MODULE with 667 MHz clock frequency. Operating at 1.5V, it offers 8192 refresh cycles and features a single bank page burst access mode. Ideal for commercial applications requiring high-speed memory performance in microelectronic assemblies.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 24,800 parts In-Stock

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Vyrian

USA . 3,813 parts In-Stock

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Digiode

USA . 634 parts In-Stock

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Connect4Technologies Inc.

Canada . 301 parts In-Stock

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Quantum Digital Technology

USA . 53 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 113 parts In-Stock

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$11.391

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$10.936

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$10.936

113

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$10.936

$10.936

AZTECH Wire

Italy . 727 parts In-Stock

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$18.540

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727

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Ampacity Inc.

Singapore . 1,146 parts In-Stock

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$26.000

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 1,412 parts In-Stock

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Authorized Procurement Solutions

USA . 128 parts In-Stock

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128

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Perfect Parts

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Overview

Discover the cutting-edge MT8JSF25664HZ-1G4D1 by Micron Technology, a top-tier manufacturer in the industry. This high-quality DRAM module offers unparalleled performance and reliability for a wide range of applications. With its advanced technology and impressive specifications, this memory module delivers exceptional value and benefits to customers looking for efficient and seamless computing experiences. Upgrade your system with Micron's MT8JSF25664HZ-1G4D1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the DRAM module.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, making the DRAM module suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 1.5

The 1.5V nominal supply voltage ensures compatibility with a wide range of systems and devices.

Maximum Clock Frequency (fCLK): 667 MHz

The high clock frequency of 667 MHz allows for quick access to data, making the DRAM module ideal for demanding computing tasks.

Memory IC Type: DDR DRAM MODULE

Being a DDR DRAM module, it offers improved data transfer rates and efficiency compared to standard SDRAM modules.

Technical Specifications

DRAM MT8JSF25664HZ-1G4D1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

667 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PDMA-N204

JESD-609 Code:

e3

Length:

67.6 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

64

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

204

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX64

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

DIMM204,24

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

1.5,3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Standby Current:

.096 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

2920 mA

Maximum Supply Voltage (Vsup):

1.575 V

Minimum Supply Voltage (Vsup):

1.425 V

Nominal Supply Voltage / Vsup (V):

1.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.6 mm

Terminal Position:

DUAL

Width:

30 mm

Trade Compliance

MT8JSF25664HZ-1G4D1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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