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MT48LC16M16A2P-7E:G

Micron Technology

MT48LC16M16A2P-7E:G by Micron Technology

Micron Technology's MT48LC16M16A2P-7E:G is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 143 MHz clock frequency. Ideal for commercial applications requiring fast access time and low standby current consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Chip Stock

USA . 18,300 parts In-Stock

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Vyrian

USA . 8,429 parts In-Stock

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Cyclops Electronics Ltd

UK . 8,000 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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4,000

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Digiode

USA . 1,174 parts In-Stock

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Pegasus Components GmbH

Germany . 400 parts In-Stock

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400

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Rebound Electronics

UK . 396 parts In-Stock

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396

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Atlantic Semiconductor

USA . 183 parts In-Stock

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Touchstone Systems

USA . 180 parts In-Stock

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180

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Inventory MP

USA . 115 parts In-Stock

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115

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Global Solutions Electronics Company

USA . 50 parts In-Stock

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50

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A&K Electronics

USA . 18 parts In-Stock

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Rotakorn

Sweden . 18 parts In-Stock

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LWI Electronics Inc

India . 9 parts In-Stock

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Speed Components Ltd

Israel . 8 parts In-Stock

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Bristol Electronics

USA . 2 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1 parts In-Stock

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$5.816

100+ parts

$5.293

1k+ parts

$4.769

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$5.816

$5.293

$4.769

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Andel Nordic

Denmark . 1,070 parts In-Stock

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$6.462

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$6.203

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$6.203

1,070

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$6.203

AZTECH Wire

Italy . 785 parts In-Stock

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$19.970

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785

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Ampacity Inc.

Singapore . 1,310 parts In-Stock

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$29.000

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RC Electronics

USA . 20,527 parts In-Stock

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Perfect Parts

USA . 15,848 parts In-Stock

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S.R.D Solutions

India . 15,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,235 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Futuretech Components

Singapore . 789 parts In-Stock

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Corphita

USA . 776 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

India . 744 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Speed Components Ltd (Excess)

Israel . 6 parts In-Stock

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Overview

Enhance your devices with the superior quality and reliability of Micron Technology's MT48LC16M16A2P-7E:G DRAM. This cutting-edge memory module boasts a multitude of applications, from enhancing gaming performance to boosting productivity in enterprise settings. With a focus on delivering unparalleled value and benefits to customers, this product stands out for its efficient power consumption, high-speed operation, and compact package design. Trust Micron Technology for top-of-the-line memory solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Operating Mode: SYNCHRONOUS

Synchronous operation helps in data transfer at a faster rate and allows for efficient communication with the processor.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a supply voltage of 3.3V ensures compatibility with standard electronic systems and reduces power consumption.

Maximum Clock Frequency (fCLK): 143 MHz

The high clock frequency allows for faster data processing and better performance in demanding applications.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, this product offers high-speed data access and improved performance for memory-intensive tasks.

Technical Specifications

DRAM MT48LC16M16A2P-7E:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0025 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

MT48LC16M16A2P-7E:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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