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MT9HTF12872RHZ-80EM1

Micron Technology

MT9HTF12872RHZ-80EM1 by Micron Technology

Micron Technology's MT9HTF12872RHZ-80EM1 is a 128MX72 DDR DRAM MODULE with 9663676416 bit memory density. Operating at 1.8V, it features SYNCHRONOUS mode and SELF REFRESH capability. Ideal for commercial applications, this MICROELECTRONIC ASSEMBLY has a temperature range of 0-70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,775 parts In-Stock

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Digiode

USA . 1,231 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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AZTECH Wire

Italy . 844 parts In-Stock

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$17.590

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844

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Ampacity Inc.

Singapore . 478 parts In-Stock

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$22.000

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478

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Argo Parts USA

USA . 3,916 parts In-Stock

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Corphita

USA . 1,828 parts In-Stock

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Continental Prestige Electronics

USA . 569 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Elevate your system's performance with the MT9HTF12872RHZ-80EM1 by Micron Technology, a top-tier manufacturer known for delivering high-quality DRAM modules. Ideal for a wide range of applications, this synchronous memory module offers seamless operation and self refresh capabilities. With a nominal supply voltage of 1.8V and a commercial temperature grade, this DDR DRAM module boasts a memory density of 9,663,676,416 bits. Upgrade your system today with Micron's reliable and efficient memory solution, ensuring optimal performance and reliability for all your computing needs.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular shape allows for efficient packing and installation in various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and predictable rate, improving overall system performance.

Self Refresh: YES

Self-refresh capability helps in maintaining data integrity and stability during power outages or interruptions.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a standard voltage level which is efficient and compatible with many systems.

No. of Terminals: 200

Provides ample connectivity options for integration into different devices and systems.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures without compromising performance or reliability.

Organization: 128MX72

Organized in a 128 megabits by 72 data bits format, offering a balance between memory capacity and data width.

Minimum Operating Temperature: 0 °C

Works efficiently even in low-temperature environments.

Terminal Position: ZIG-ZAG

Zig-zag terminal positioning provides stability and ease of installation.

Maximum Seated Height: 30.15 mm

Compact size with a relatively low height, making it suitable for space-constrained applications.

Width: 3.8 mm

Narrow width allows for flexibility in installation and placement within devices.

Minimum Supply Voltage (Vsup): 1.7 V

Can operate at a lower voltage level for power efficiency.

Length: 67.6 mm

Optimal length for fitting into various electronic devices.

Temperature Grade: COMMERCIAL

Designed for commercial use with reliable performance in typical operating conditions.

Access Mode: SINGLE BANK PAGE BURST

Efficient and fast access mode for retrieving and storing data.

Technology: CMOS

Complementary metal-oxide-semiconductor (CMOS) technology offers low power consumption and high speed operation.

Terminal Form: NO LEAD

Lead-free terminal form for environmentally friendly and safer handling.

No. of Words: 134217728 words

Large memory capacity with millions of accessible words for data storage.

Memory Width: 72

Wide memory width for efficient data processing and retrieval.

No. of Words Code: 128M

Encoded with a 128M code for easy identification and compatibility.

Maximum Supply Voltage (Vsup): 1.9 V

Safe maximum voltage level for stable and reliable operation.

Memory Density: 9663676416 bit

High memory density for storing large amounts of data.

Memory IC Type: DDR DRAM MODULE

Employs DDR (Double Data Rate) DRAM technology for enhanced data transfer rates and efficiency.

Technical Specifications

DRAM MT9HTF12872RHZ-80EM1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N200

Length:

67.6 mm

Memory Density:

9663676416 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Maximum Seated Height:

30.15 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Width:

3.8 mm

Trade Compliance

MT9HTF12872RHZ-80EM1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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