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MT9VDDT6472HIY-335F2

Micron Technology

MT9VDDT6472HIY-335F2 by Micron Technology

Micron Technology's MT9VDDT6472HIY-335F2 is a 64MX72 DDR DRAM MODULE with 4831838208-bit memory density. Operating at 2.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed single bank page burst access.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 4,960 parts In-Stock

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Vyrian

USA . 4,870 parts In-Stock

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4,870

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Digiode

USA . 430 parts In-Stock

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430

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 521 parts In-Stock

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$17.350

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521

$17.350

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Ampacity Inc.

Singapore . 730 parts In-Stock

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$23.000

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Component Stockers USA

USA . 448 parts In-Stock

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$99.990

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 148 parts In-Stock

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Microchip USA

USA . 119 parts In-Stock

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Overview

Elevate your system's performance with Micron Technology's MT9VDDT6472HIY-335F2 DDR DRAM MODULE. Designed with precision and expertise, this high-quality memory module offers unparalleled reliability and speed for a wide range of applications. From gaming to data processing, this synchronous DRAM delivers seamless performance with its self-refresh capabilities and efficient operation. Experience the value and benefits of Micron's cutting-edge technology, providing customers with the competitive edge they need in today's fast-paced world. Choose Micron for superior quality and unmatched performance.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and compatibility with standard slots in devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transmitted in a synchronized manner, improving overall performance and reliability.

Self Refresh: YES

Self-refresh capability helps in preserving data integrity during power fluctuations or outages.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal supply voltage for efficient power consumption and stable performance.

No. of Terminals: 200

High number of terminals ensure reliable connections and data transfer.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly provides compact size and efficient circuit integration.

Maximum Operating Temperature: 70 °C

Capable of operating at high temperatures without degradation in performance.

Organization: 64MX72

Optimized organization for efficient data handling and processing.

Minimum Operating Temperature: 0 °C

Capable of functioning in low temperature environments.

Terminal Finish: GOLD

Gold finish ensures good conductivity and resistance to corrosion.

Terminal Position: ZIG-ZAG

Zig-zag terminal position allows for efficient space utilization and easy connectivity.

Maximum Seated Height: 3.8 mm

Low profile design for compatibility with slim devices.

Width: 31.75 mm

Compact width for flexibility in installation and compatibility.

Minimum Supply Voltage (Vsup): 2.3 V

Lower supply voltage option for energy efficiency.

Length: 67.6 mm

Optimum length for fitting into standard memory slots in devices.

Temperature Grade: COMMERCIAL

Designed for commercial applications with stable performance under normal operating conditions.

Access Mode: SINGLE BANK PAGE BURST

Efficient access mode for rapid data retrieval and processing.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation.

Terminal Form: NO LEAD

Lead-free terminal form for environmental friendliness and compliance with regulations.

No. of Words: 67108864 words

High word count for storing large volumes of data efficiently.

Memory Width: 72

Wide memory width for fast data transfer and processing.

No. of Words Code: 64M

Code representing the number of words, indicating high memory capacity.

Maximum Supply Voltage (Vsup): 2.7 V

Higher supply voltage option for peak performance in demanding applications.

Memory Density: 4831838208 bit

High memory density for efficient storage of data and applications.

Memory IC Type: DDR DRAM MODULE

DDR DRAM module for enhanced data transfer rates and performance.

Technical Specifications

DRAM MT9VDDT6472HIY-335F2 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

SINGLE BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-XZMA-N200

JESD-609 Code:

e4

Length:

67.6 mm

Memory Density:

4831838208 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

200

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64MX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Seated Height:

3.8 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

GOLD

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Width:

31.75 mm

Trade Compliance

MT9VDDT6472HIY-335F2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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