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4096 DRAM 202

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48LC2M32B2TG6IT:GTR by Micron Technology

MT48LC2M32B2TG6IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.5 ns

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

67108864 bit

SYNCHRONOUS DRAM

32

86

2097152 words

2M

85 Cel

-40 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

225 mA

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

MT9LSDT1672G-133G2 by Micron Technology

MT9LSDT1672G-133G2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

1207959552 bit

SYNCHRONOUS DRAM MODULE

72

168

16777216 words

16M

55 Cel

0 Cel

16MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.018 Amp

DRAMs

2790 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT8LSDT1664AY-133G3 by Micron Technology

MT8LSDT1664AY-133G3

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

1073741824 bit

SYNCHRONOUS DRAM MODULE

64

168

16777216 words

16M

70 Cel

0 Cel

16MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.016 Amp

DRAMs

2480 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT16LSDT3264AY-133G3 by Micron Technology

MT16LSDT3264AY-133G3

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

2147483648 bit

SYNCHRONOUS DRAM MODULE

64

168

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.032 Amp

DRAMs

4960 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT48H8M32LFB5-75AT:H by Micron Technology

MT48H8M32LFB5-75AT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

268435456 bit

SYNCHRONOUS DRAM

32

90

8388608 words

8M

105 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

4096

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

IS42S16400J-6TL-TR by Integrated Silicon Solution

IS42S16400J-6TL-TR

Integrated Silicon Solution

IS42S16400J-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX16 organization, 166 MHz clock frequency, and 67108864-bit memory density. Ideal for commercial applications requiring fast access times and low standby current consumption.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

67108864 bit

SYNCHRONOUS DRAM

16

54

4194304 words

4M

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

150 mA

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

IS42S32800G-6BLI-TR by Integrated Silicon Solution

IS42S32800G-6BLI-TR

Integrated Silicon Solution

IS42S32800G-6BLI-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 166 MHz and has a temperature grade of INDUSTRIAL. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and industrial control systems.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

268435456 bit

SYNCHRONOUS DRAM

32

90

8388608 words

8M

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.003 Amp

DRAMs

350 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

IS42S32400F-6BL-TR by Integrated Silicon Solution

IS42S32400F-6BL-TR

Integrated Silicon Solution

IS42S32400F-6BL-TR by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high memory density and fast data processing in a compact grid array package.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

134217728 bit

SYNCHRONOUS DRAM

32

90

4194304 words

4M

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

IS42S32400F-6TLI-TR by Integrated Silicon Solution

IS42S32400F-6TLI-TR

Integrated Silicon Solution

IS42S32400F-6TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, operating at 166 MHz. It features a small outline package and is ideal for industrial applications requiring high memory density and fast access times.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

134217728 bit

SYNCHRONOUS DRAM

32

3

86

4194304 words

4M

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

IS42S16800F-7BL-TR by Integrated Silicon Solution

IS42S16800F-7BL-TR

Integrated Silicon Solution

IS42S16800F-7BL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 134217728 bit memory density. It operates at a max clock frequency of 143 MHz and has a memory width of 16. Ideal for commercial applications requiring high-speed data processing in devices like networking equipment and industrial control systems.

5.4 ns

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

134217728 bit

SYNCHRONOUS DRAM

16

54

8388608 words

8M

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

IS42S81600F-7TLI-TR by Integrated Silicon Solution

IS42S81600F-7TLI-TR

Integrated Silicon Solution

IS42S81600F-7TLI-TR by Integrated Silicon Solution is a 16MX8 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times in a small outline package.

5.4 ns

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

134217728 bit

SYNCHRONOUS DRAM

8

54

16777216 words

16M

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

IS42S16800F-6TLI-TR by Integrated Silicon Solution

IS42S16800F-6TLI-TR

Integrated Silicon Solution

IS42S16800F-6TLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85 °C operating temp. Ideal for industrial applications requiring high-speed memory access in a small outline package.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

134217728 bit

SYNCHRONOUS DRAM

16

54

8388608 words

8M

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

120 mA

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

IS42S32800G-7BLI by Integrated Silicon Solution

IS42S32800G-7BLI

Integrated Silicon Solution

IS42S32800G-7BLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has a min operating temperature of -40 °C. It is commonly used in industrial applications requiring high-speed memory access.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.003 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT46H8M16LFBF-6AT:K by Micron Technology

MT46H8M16LFBF-6AT:K

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: BGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

134217728 bit

LPDDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

BGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

4096

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

W9825G2JB-6I by Winbond Electronics

W9825G2JB-6I

Winbond Electronics

Winbond Electronics' W9825G2JB-6I is an 8MX32 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Features include 3.3V supply voltage, 90 terminals in a thin profile grid array package, and common I/O type with self-refresh capability.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3/3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

150 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT48LC8M16A2TG-6A:L by Micron Technology

MT48LC8M16A2TG-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:L is a 8MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC2M32B2TG-6AIT:J by Micron Technology

MT48LC2M32B2TG-6AIT:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M16A2P-7EIT:J by Micron Technology

MT48LC4M16A2P-7EIT:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

IS42S32400F-6BLI by Integrated Silicon Solution

IS42S32400F-6BLI

Integrated Silicon Solution

IS42S32400F-6BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 166MHz clock frequency. It features self-refresh mode, common I/O type, and supports four-bank page burst access. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

IS42S32400F-6BL by Integrated Silicon Solution

IS42S32400F-6BL

Integrated Silicon Solution

IS42S32400F-6BL by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

IS42S32400F-7BLI by Integrated Silicon Solution

IS42S32400F-7BLI

Integrated Silicon Solution

IS42S32400F-7BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

160 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

IS42S32400F-7TL by Integrated Silicon Solution

IS42S32400F-7TL

Integrated Silicon Solution

IS42S32400F-7TL by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at 143MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

3

1

1

86

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

160 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

10.16 mm

W9864G6JT-6I by Winbond Electronics

W9864G6JT-6I

Winbond Electronics

W9864G6JT-6I by Winbond Electronics is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT48LC4M16A2P-6AIT:J by Micron Technology

MT48LC4M16A2P-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

AS4C8M16S-6TIN by Alliance Memory

AS4C8M16S-6TIN

Alliance Memory

Alliance Memory's AS4C8M16S-6TIN is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, 6 ns access time, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability. Package style: Small Outline, Thin Profile.

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3/e6

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

3

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

DRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

MT48H8M32LFB5-75IT:H by Micron Technology

MT48H8M32LFB5-75IT:H

Micron Technology

Micron Technology's MT48H8M32LFB5-75IT:H is a 8MX32 DRAM with 133 MHz clock frequency, 85 mA supply current, and 85°C max operating temp. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42S16800F-5TLI by Integrated Silicon Solution

IS42S16800F-5TLI

Integrated Silicon Solution

IS42S16800F-5TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200 MHz clock frequency. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

130 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

IS42S16800F-6TL by Integrated Silicon Solution

IS42S16800F-6TL

Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports common I/O type. Ideal for commercial applications requiring fast memory access and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS42S16800F-7BL by Integrated Silicon Solution

IS42S16800F-7BL

Integrated Silicon Solution

IS42S16800F-7BL by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 143 MHz clock frequency. It operates at 3.3V, has a memory density of 134217728 bits, and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48H8M32LFB5-6:H by Micron Technology

MT48H8M32LFB5-6:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

13 mm

MT48H8M32LFB5-6IT:H by Micron Technology

MT48H8M32LFB5-6IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

13 mm

MT48H8M32LFB5-75:H by Micron Technology

MT48H8M32LFB5-75:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

8 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

13 mm

IS43R16800E-6TLI by Integrated Silicon Solution

IS43R16800E-6TLI

Integrated Silicon Solution

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

22.22 mm

134217728 bit

DDR1 DRAM

16

1

1

66

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

4096

1.2 mm

YES

2,4,8

.003 Amp

DRAMs

220 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT48LC16M8A2BB-6A:L by Micron Technology

MT48LC16M8A2BB-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PBGA-B60

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,8X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC16M8A2P-6A:L by Micron Technology

MT48LC16M8A2P-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M8A2P-6AIT:L by Micron Technology

MT48LC16M8A2P-6AIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M8A2P-7E:L by Micron Technology

MT48LC16M8A2P-7E:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC8M16A2B4-6A:L by Micron Technology

MT48LC8M16A2B4-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2P-7EIT:L by Micron Technology

MT48LC8M16A2P-7EIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 143 MHz clock frequency. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC2M32B2P-6AIT:J by Micron Technology

MT48LC2M32B2P-6AIT:J

Micron Technology

Micron Technology's MT48LC2M32B2P-6AIT:J is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications. With a low standby current of 0.0025 Amp and common I/O type, it offers fast access time of 5.4 ns.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC2M32B2B5-6A:J by Micron Technology

MT48LC2M32B2B5-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M16A2P-7E:J by Micron Technology

MT48LC4M16A2P-7E:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC2M32B2P-6A:J by Micron Technology

MT48LC2M32B2P-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC2M32B2P-5:J by Micron Technology

MT48LC2M32B2P-5:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

4.5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

DRAMs

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC2M32B2TG-6A:J by Micron Technology

MT48LC2M32B2TG-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M16A2B4-6A:J by Micron Technology

MT48LC4M16A2B4-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M16A2B4-6AIT:J by Micron Technology

MT48LC4M16A2B4-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2B4-6AIT:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M16A2B4-7E:J by Micron Technology

MT48LC4M16A2B4-7E:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm