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IS42S32800G-6BLI-TR

Integrated Silicon Solution

IS42S32800G-6BLI-TR by Integrated Silicon Solution

IS42S32800G-6BLI-TR by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 166 MHz and has a temperature grade of INDUSTRIAL. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and industrial control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,611 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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AZTECH Wire

Italy . 462 parts In-Stock

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$9.745

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462

$9.745

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Experience the next level of memory performance with the IS42S32800G-6BLI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, their commitment to quality is unmatched. Designed for applications that require high-speed and reliable data storage, this DRAM module offers exceptional value and benefits to customers. With a wide range of operating temperatures and a maximum clock frequency of 166 MHz, this product is perfect for industrial-grade solutions. Whether you're working on robotics, automotive systems, or networking equipment, the IS42S32800G-6BLI-TR delivers unparalleled performance and efficiency. Upgrade your memory capabilities today and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with a durable and lightweight plastic/epoxy material, ensuring longevity and ease of handling.

Surface Mount: YES

With surface mount capability, this product can be easily integrated onto circuit boards, saving space and allowing for efficient PCB design.

Package Shape: RECTANGULAR

The rectangular shape of this package allows for easy installation and compatibility with various electronic devices.

Input/Output Type: COMMON

The common input/output type makes this product versatile and suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V, this product ensures efficient power utilization and compatibility with standard voltage levels.

Power Supplies (V): 3.3

The utilization of a 3.3V power supply further enhances the energy efficiency of this product, making it an environmentally friendly choice.

No. of Terminals: 90

With 90 terminals, this product provides a sufficient number of connections for reliable data transmission and integration with other components.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array, fine pitch package style offers high density and compactness, making it suitable for applications where space is limited.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can withstand demanding environmental conditions, ensuring reliable performance in various applications.

Organization: 8MX32

The 8MX32 organization provides a large memory capacity, ideal for applications that require extensive data storage and retrieval capabilities.

Output Characteristics: 3-STATE

The 3-STATE output characteristics of this product enable multiple outputs to be connected together, enhancing flexibility and reducing the complexity of circuit designs.

Minimum Operating Temperature: -40 °C

This product can operate reliably even in extremely low temperatures, making it suitable for diverse environments and applications.

Terminal Position: BOTTOM

With bottom terminal positioning, this product offers ease of installation and connection in circuit board assemblies.

Maximum Clock Frequency (fCLK): 166 MHz

The high maximum clock frequency of 166 MHz allows for fast and efficient data processing, making this product ideal for high-performance systems.

Temperature Grade: INDUSTRIAL

This product is designed to meet industrial-grade standards, ensuring reliability and stability in harsh working environments.

Technology: CMOS

The CMOS technology used in this product provides low power consumption, high speed, and excellent noise immunity, making it an efficient choice for various applications.

Terminal Form: BALL

With a ball terminal form, this product offers reliable contact and solder connections, ensuring secure and robust connections in electronic assemblies.

Maximum Supply Current: 350 mA

The maximum supply current of 350 mA ensures that this product operates within safe limits, preventing excessive power consumption and potential damage.

No. of Words: 8388608 words

With a large number of words, this product can store and retrieve vast amounts of data efficiently, making it suitable for data-intensive applications.

Sequential Burst Length: 1,2,4,8,FP

The sequential burst length options offer flexibility in data transfer, accommodating different data access patterns and optimizing performance.

Memory Width: 32

The 32-bit memory width of this product enables efficient data processing and transfer, supporting a wide range of applications.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8 mm allows for high-density packaging and efficient use of PCB space, making this product suitable for compact designs.

No. of Words Code: 8M

The 8M words code provides a high memory capacity, allowing for extensive data storage and retrieval in diverse applications.

Memory Density: 268435456 bit

With a large memory density, this product offers ample storage space for data, making it suitable for applications requiring high-capacity memory.

Memory IC Type: SYNCHRONOUS DRAM

The synchronous dynamic random-access memory (DRAM) technology used in this product ensures fast and efficient data access, making it an optimal choice for high-performance systems.

Maximum Standby Current: 0.003 Amp

The maximum standby current of 0.003 Amp ensures low power consumption during idle periods, contributing to energy efficiency and prolonging battery life.

Refresh Cycles: 4096

The 4096 refresh cycles enhance the stability and reliability of this product by periodically refreshing the stored data, preventing data loss or corruption.

Interleaved Burst Length: 1,2,4,8

The interleaved burst length options optimize data transfer efficiency by allowing for burst transfers with varying lengths, improving overall system performance.

Maximum Access Time: 5.4 ns

With a low maximum access time of 5.4 ns, this product enables fast data retrieval, ensuring smooth operation in time-sensitive applications.

Technical Specifications

DRAM IS42S32800G-6BLI-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

5.4 ns

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

No. of Terminals:

90

No. of Words:

8388608 words

No. of Words Code:

8M

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX32

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.003 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

350 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Trade Compliance

IS42S32800G-6BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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