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W9825G2JB-6I

Winbond Electronics

W9825G2JB-6I by Winbond Electronics

Winbond Electronics' W9825G2JB-6I is an 8MX32 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Features include 3.3V supply voltage, 90 terminals in a thin profile grid array package, and common I/O type with self-refresh capability.

Median Price

$7.110

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Nova Conductors

Japan . 15 parts In-Stock

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Vyrian

USA . 3,314 parts In-Stock

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Sensible Micro Corp

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Chip Stock

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AZTECH Wire

Italy . 863 parts In-Stock

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$6.702

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QUARKTWIN TECHNOLOGY LTD

USA . 19,088 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Netroflash

USA . 500 parts In-Stock

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$6.968

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$6.755

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$6.612

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Cyclops Electronics Ltd (Excess)

UK . 56 parts In-Stock

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Overview

Upgrade your electronics with the W9825G2JB-6I by Winbond Electronics, a top-quality DRAM that boasts reliability and performance. Manufactured by industry leaders, this memory module offers seamless synchronous operation and self-refresh capabilities, making it ideal for a wide range of applications. With a nominal supply voltage of 3.3V and maximum clock frequency of 166 MHz, this product delivers exceptional value and benefits to customers seeking high-speed data processing and storage solutions. Trust Winbond Electronics to elevate your devices to the next level with the W9825G2JB-6I.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, making it a reliable choice for various applications.

Surface Mount: YES

The ability to be surface mounted allows for easy and convenient installation in electronic devices, saving time and effort.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to integrate the DRAM into circuit designs and layouts efficiently.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and synchronization within the DRAM system, improving overall performance.

Self Refresh: YES

With self-refresh capability, the DRAM can maintain data integrity and reliability even during low power or standby modes.

Input/Output Type: COMMON

A common input/output type simplifies the connection and communication process with other components, enhancing compatibility.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V offers efficient power consumption while maintaining optimum performance levels.

Power Supplies (V): 3/3.3

Dual power supply options provide flexibility and compatibility with different voltage requirements in electronic systems.

No. of Terminals: 90

The high number of terminals allows for versatile connectivity and data transfer capabilities in complex circuit designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The package style features grid array and thin profile design with fine pitch, ensuring space-saving and high-density integration possibilities.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C ensures reliability and performance in harsh environmental conditions.

Organization: 8MX32

The 8Mx32 organization provides ample memory capacity and data processing capabilities for various computing tasks and applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature tolerance of -40°C allows for reliable performance even in extreme cold environments.

Terminal Position: BOTTOM

The bottom terminal position offers easy access for connections and installation, streamlining the assembly process.

Maximum Seated Height: 1.2 mm

The low maximum seated height ensures compatibility with slim and compact electronic devices, enhancing design flexibility.

Maximum Clock Frequency (fCLK): 166 MHz

The high maximum clock frequency of 166 MHz enables fast data processing and efficient multitasking capabilities.

Width: 8 mm

The compact width of 8mm allows for space-efficient integration into electronic systems with limited board space.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V ensures stable operation and power efficiency in low-power scenarios.

Length: 13 mm

The moderate length of 13mm provides a balance between compact size and sufficient memory capacity for diverse applications.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature tolerance ensures reliable performance in demanding environments and industrial applications.

Access Mode: FOUR BANK PAGE BURST

The four bank page burst access mode allows for efficient data retrieval and transfer, enhancing overall system responsiveness.

Technology: CMOS

The CMOS technology used in the DRAM offers low power consumption and high speed operation, making it an energy-efficient choice.

Terminal Form: BALL

The ball terminal form provides secure connections and reliable contact points for enhanced durability and longevity.

Maximum Supply Current: 150 mA

The maximum supply current of 150mA ensures efficient power usage and stable performance under varying load conditions.

No. of Words: 8388608 words

The high number of words capacity provides ample storage for data processing and multitasking requirements in complex systems.

Sequential Burst Length: 1,2,4,8,FP

The flexible sequential burst length options allow for customized data transfer and processing modes based on specific application needs.

Memory Width: 32

The memory width of 32 bits enables efficient data handling and processing for a wide range of computing tasks and applications.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8mm ensures high-density integration and space-saving design possibilities in compact electronic devices.

No. of Words Code: 8M

The 8M words code provides a quick reference for the abundant memory capacity and storage capabilities of the DRAM.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V offers a safe operating range for the DRAM, ensuring stable performance under varying voltage conditions.

Memory Density: 268435456 bit

The high memory density capacity of 268,435,456 bits provides ample storage for handling large amounts of data and memory-intensive tasks.

Memory IC Type: SYNCHRONOUS DRAM

The synchronous DRAM type offers fast and synchronized data processing capabilities, improving overall system performance and efficiency.

Maximum Standby Current: 0.004 Amp

The low maximum standby current of 0.004A ensures energy-efficient operation in standby modes, reducing power consumption.

Refresh Cycles: 4096

The 4096 refresh cycles ensure data integrity and reliability over extended usage periods, maintaining consistent performance levels.

Interleaved Burst Length: 1,2,4,8

Interleaved burst length options provide efficient data transfer and processing capabilities for multitasking operations and parallel computing tasks.

Maximum Access Time: 5 ns

The fast maximum access time of 5ns ensures quick data retrieval and processing, enhancing overall system responsiveness and performance.

Technical Specifications

DRAM W9825G2JB-6I attributes and parameters. Explore more DRAM devices from Winbond Electronics

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PBGA-B90

Length:

13 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

90

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA90,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

W9825G2JB-6I Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Winbond Electronics

Winbond was established in September 1987 and listed on Taiwan Stock Exchange in 1995, and is headquartered in Central Taiwan Science Park, Taichung, Taiwan. Winbond's 12-inch fabs, which are the factories with high levels of intelligent technology and automation, are located in Taichung and Kaohsiung Science Park. Winbond is a Specialty memory IC company. From product design, research and development, and wafer fabrication to the marketing of brand name products, Winbond endeavors to provide its global clientele with total memory solutions. Winbond's major product lines include Code Storage Flash Memory, TrustME® Secure Flash,Specialty DRAM and Mobile DRAM. The Company is the only one in Taiwan with the ability to develop DRAM and FLASH products in-house. Our advantages of technological autonomy and prudent capacity strategies enable us to build a highly flexible production system and create synergy among product lines, which allows us to meet the diverse demands of customers while building our brand image. Winbond’s products are used extensively in handheld devices, consumer electronics, and computer peripherals. We also focus on high-barrier, high-quality applications, such automotive and industrial electronics. Winbond has set up operations and distributor networks in the USA, Japan, China, Hong Kong , Israel ,and Germany to serve clients better and expand the depth and breadth of product sales. With regard to quality, Winbond pursues excellence and zero defects, and is certified in a number of quality and environmental safety management systems. It is also the first memory manufacturer in Taiwan to obtain the ISO 26262 certification, which is the highest standard for automotive functional safety. Winbond also always adheres to high standards of corporate governance; we have been evaluated by the Taiwan Stock Exchange as one of the top 20% listed corporate governance. Winbond will continue to provide customer-oriented services. Furthermore, by leveraging the strength of our advanced semiconductor design and manufacturing know-how, observing the core values of "accountability, innovation and synergy" and incorporating the corporate spirit of "execution, innovation and passion" in all operational activities, Winbond will strive towards the goal of becoming a hidden champion in providing sustainable semiconductors technology to enrich human life.

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