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4096 DRAM 202

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48H4M16LFB4-8IT:H by Micron Technology

MT48H4M16LFB4-8IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

60 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC2M32B2B5-7:G by Micron Technology

MT48LC2M32B2B5-7:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

225 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H4M16LFB4-75IT:H by Micron Technology

MT48H4M16LFB4-75IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

75 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC2M32B2B5-7IT:G by Micron Technology

MT48LC2M32B2B5-7IT:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

90

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

225 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32B2P-6AAAT:LTR by Micron Technology

MT48LC4M32B2P-6AAAT:LTR

Micron Technology

SYNCHRONOUS DRAM; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR; Organization: 4MX32;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSOP2

TSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

4096

AEC-Q100

1.2 mm

YES

1,2,4,8,FP

.045 Amp

120 mA

3.6 V

3 V

3.3

YES

CMOS

MATTE TIN

GULL WING

.5 mm

DUAL

30

10.16 mm

IS42S16400J-6TLI-TR by Integrated Silicon Solution

IS42S16400J-6TLI-TR

Integrated Silicon Solution

IS42S16400J-6TLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers a memory density of 67108864 bits and supports four bank page burst access mode. Ideal for industrial applications requiring fast data processing in compact systems.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

3

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

IS42S16400J-6BLI-TR by Integrated Silicon Solution

IS42S16400J-6BLI-TR

Integrated Silicon Solution

IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

W9864G6JT-6ITR by Winbond Electronics

W9864G6JT-6ITR

Winbond Electronics

W9864G6JT-6ITR by Winbond Electronics is a 4MX16 Synchronous DRAM with 67108864 bit memory density. It operates at 3.3V, has a max access time of 5ns, and supports four bank page burst access mode. This thin profile memory IC is ideal for industrial applications requiring high-speed data processing in compact spaces.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

3 V

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2P-6AXIT:L by Micron Technology

MT48LC8M16A2P-6AXIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AXIT:L is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. Ideal for applications requiring fast access time and high memory density, such as automotive electronics or industrial control systems.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

4096

AEC-Q100

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

100 mA

3.6 V

3 V

3.3

YES

CMOS

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M32B2B5-6A:LTR by Micron Technology

MT48LC4M32B2B5-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2B5-6A:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. It features common I/O type and self-refresh mode, suitable for applications requiring fast memory access and low power consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

180 mA

3.6 V

3 V

3.3

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm