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W9864G6JT-6ITR

Winbond Electronics

W9864G6JT-6ITR by Winbond Electronics

W9864G6JT-6ITR by Winbond Electronics is a 4MX16 Synchronous DRAM with 67108864 bit memory density. It operates at 3.3V, has a max access time of 5ns, and supports four bank page burst access mode. This thin profile memory IC is ideal for industrial applications requiring high-speed data processing in compact spaces.

Median Price

$2.470

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,500 parts In-Stock

1+ parts

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$2.470

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2,500

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$2.470

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,498 parts In-Stock

1+ parts

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6,498

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 239 parts In-Stock

1+ parts

$10.340

100+ parts

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239

$10.340

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Experience superior quality and performance with the W9864G6JT-6ITR by Winbond Electronics, a leading manufacturer in the DRAM category. This innovative product offers a reliable solution for a wide range of applications, delivering value and efficiency to customers. With advanced features like synchronous operation and self-refresh capabilities, this memory device ensures seamless functionality and enhanced user experience. Trust Winbond Electronics for cutting-edge technology and unmatched reliability in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring longevity and affordability of the product.

Surface Mount: YES

Easy to install and mount on PCBs, saving time and effort during the manufacturing process.

Operating Mode: SYNCHRONOUS

Provides synchronized data transfer for improved performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage level, ensuring compatibility with various systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial use and harsh environments.

Memory IC Type: SYNCHRONOUS DRAM

Utilizes synchronous DRAM technology for faster data access and processing speeds.

Technical Specifications

DRAM W9864G6JT-6ITR attributes and parameters. Explore more DRAM devices from Winbond Electronics

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Minimum Standby Voltage:

3 V

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

W9864G6JT-6ITR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

PCN

Manufacturer Highlights

Winbond Electronics

Winbond was established in September 1987 and listed on Taiwan Stock Exchange in 1995, and is headquartered in Central Taiwan Science Park, Taichung, Taiwan. Winbond's 12-inch fabs, which are the factories with high levels of intelligent technology and automation, are located in Taichung and Kaohsiung Science Park. Winbond is a Specialty memory IC company. From product design, research and development, and wafer fabrication to the marketing of brand name products, Winbond endeavors to provide its global clientele with total memory solutions. Winbond's major product lines include Code Storage Flash Memory, TrustME® Secure Flash,Specialty DRAM and Mobile DRAM. The Company is the only one in Taiwan with the ability to develop DRAM and FLASH products in-house. Our advantages of technological autonomy and prudent capacity strategies enable us to build a highly flexible production system and create synergy among product lines, which allows us to meet the diverse demands of customers while building our brand image. Winbond’s products are used extensively in handheld devices, consumer electronics, and computer peripherals. We also focus on high-barrier, high-quality applications, such automotive and industrial electronics. Winbond has set up operations and distributor networks in the USA, Japan, China, Hong Kong , Israel ,and Germany to serve clients better and expand the depth and breadth of product sales. With regard to quality, Winbond pursues excellence and zero defects, and is certified in a number of quality and environmental safety management systems. It is also the first memory manufacturer in Taiwan to obtain the ISO 26262 certification, which is the highest standard for automotive functional safety. Winbond also always adheres to high standards of corporate governance; we have been evaluated by the Taiwan Stock Exchange as one of the top 20% listed corporate governance. Winbond will continue to provide customer-oriented services. Furthermore, by leveraging the strength of our advanced semiconductor design and manufacturing know-how, observing the core values of "accountability, innovation and synergy" and incorporating the corporate spirit of "execution, innovation and passion" in all operational activities, Winbond will strive towards the goal of becoming a hidden champion in providing sustainable semiconductors technology to enrich human life.

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