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IS42S16800F-5TLI

Integrated Silicon Solution

IS42S16800F-5TLI by Integrated Silicon Solution

IS42S16800F-5TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200 MHz clock frequency. Ideal for industrial applications requiring fast access times and high memory density.

Median Price

$4.410

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 90 parts In-Stock

1+ parts

$4.410

100+ parts

-

1k+ parts

$3.200

10k+ parts

$3.000

90

$4.410

-

$3.200

$3.000

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$3.940

100+ parts

-

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15

$3.940

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Vyrian

USA . 5,802 parts In-Stock

1+ parts

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5,802

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Bristol Electronics

USA . 140 parts In-Stock

1+ parts

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140

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Cyclops Electronics Ltd

UK . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bastille Electronics

Australia . 2,927 parts In-Stock

1+ parts

$3.940

100+ parts

$3.743

1k+ parts

$3.556

10k+ parts

$3.507

2,927

$3.940

$3.743

$3.556

$3.507

AZTECH Wire

Italy . 723 parts In-Stock

1+ parts

$16.978

100+ parts

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723

$16.978

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Perfect Parts

USA . 10,080 parts In-Stock

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10,080

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Authorized Procurement Solutions

USA . 1,388 parts In-Stock

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1,388

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Eastek

USA . 956 parts In-Stock

1+ parts

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$3.870

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956

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$3.870

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GreenTree Electronics

Israel . 956 parts In-Stock

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956

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Overview

Elevate your system's performance with the IS42S16800F-5TLI by Integrated Silicon Solution, a top-tier DRAM module designed for seamless synchronous operation. Boasting a compact package body made of durable plastic/epoxy material, this innovative memory solution offers unparalleled reliability and efficiency. Ideal for a wide range of industrial applications, this high-quality product guarantees optimal performance and enhanced productivity. Upgrade to the IS42S16800F-5TLI today and experience the difference in speed, reliability, and overall system functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection for the DRAM, ensuring reliability and longevity.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other components in the system, enhancing overall performance.

Nominal Supply Voltage: 3.3V

The optimal supply voltage ensures stable and efficient power delivery to the DRAM, promoting reliable operation.

Maximum Clock Frequency: 200 MHz

High clock frequency enables fast data processing and access speeds, enhancing system performance and responsiveness.

Memory Density: 134217728 bit

The high memory density allows for storing a large amount of data in a compact form factor, ideal for applications requiring extensive memory capacity.

Technical Specifications

DRAM IS42S16800F-5TLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

130 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IS42S16800F-5TLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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