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IS42S16800F-7BL-TR

Integrated Silicon Solution

IS42S16800F-7BL-TR by Integrated Silicon Solution

IS42S16800F-7BL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 134217728 bit memory density. It operates at a max clock frequency of 143 MHz and has a memory width of 16. Ideal for commercial applications requiring high-speed data processing in devices like networking equipment and industrial control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,956 parts In-Stock

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5,956

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 246 parts In-Stock

1+ parts

$11.921

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246

$11.921

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Eastek

USA . 2,500 parts In-Stock

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$3.280

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2,500

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$3.280

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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2,500

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Upgrade your systems with the high-quality IS42S16800F-7BL-TR DRAM by Integrated Silicon Solution. Designed to provide reliable performance, this memory module offers a wide range of applications for various electronic devices. With its cutting-edge technology and efficient design, customers can expect improved speed and seamless operation. Trust in Integrated Silicon Solution's expertise to deliver top-notch products that bring value and innovation to your projects. Elevate your devices with the IS42S16800F-7BL-TR and experience the difference in performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and ensures the safety of the components inside.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and improving overall product reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems and devices.

Maximum Clock Frequency (fCLK): 143 MHz

The high maximum clock frequency of 143 MHz allows for fast and efficient data processing, making it suitable for demanding applications.

Memory IC Type: SYNCHRONOUS DRAM

The synchronous DRAM technology used in this product provides high-speed data transfers and improved performance for memory-intensive tasks.

Technical Specifications

DRAM IS42S16800F-7BL-TR attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

5.4 ns

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

100 mA

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Trade Compliance

IS42S16800F-7BL-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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