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54 DRAM 242

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
IS42S16400J-6TL-TR by Integrated Silicon Solution

IS42S16400J-6TL-TR

Integrated Silicon Solution

IS42S16400J-6TL-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX16 organization, 166 MHz clock frequency, and 67108864-bit memory density. Ideal for commercial applications requiring fast access times and low standby current consumption.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

67108864 bit

SYNCHRONOUS DRAM

16

54

4194304 words

4M

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

150 mA

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

IS42S16800F-7BL-TR by Integrated Silicon Solution

IS42S16800F-7BL-TR

Integrated Silicon Solution

IS42S16800F-7BL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 134217728 bit memory density. It operates at a max clock frequency of 143 MHz and has a memory width of 16. Ideal for commercial applications requiring high-speed data processing in devices like networking equipment and industrial control systems.

5.4 ns

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

134217728 bit

SYNCHRONOUS DRAM

16

54

8388608 words

8M

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, FINE PITCH

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

IS42S81600F-7TLI-TR by Integrated Silicon Solution

IS42S81600F-7TLI-TR

Integrated Silicon Solution

IS42S81600F-7TLI-TR by Integrated Silicon Solution is a 16MX8 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times in a small outline package.

5.4 ns

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

134217728 bit

SYNCHRONOUS DRAM

8

54

16777216 words

16M

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

IS42S16800F-6TLI-TR by Integrated Silicon Solution

IS42S16800F-6TLI-TR

Integrated Silicon Solution

IS42S16800F-6TLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85 °C operating temp. Ideal for industrial applications requiring high-speed memory access in a small outline package.

5.4 ns

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

134217728 bit

SYNCHRONOUS DRAM

16

54

8388608 words

8M

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1,2,4,8,FP

.002 Amp

DRAMs

120 mA

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

IS42S83200G-7BLI-TR by Integrated Silicon Solution

IS42S83200G-7BLI-TR

Integrated Silicon Solution

IS42S83200G-7BLI-TR by Integrated Silicon Solution is a 32MX8 Synchronous DRAM with 3.3V supply, 85°C max temp, and 143 MHz clock frequency. Ideal for industrial applications requiring high memory density and fast access times.

5.4 ns

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

268435456 bit

SYNCHRONOUS DRAM

8

54

33554432 words

32M

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, FINE PITCH

3.3

Not Qualified

8192

1,2,4,8,FP

.004 Amp

DRAMs

130 mA

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

MT48H16M16LFBF-75IT:H by Micron Technology

MT48H16M16LFBF-75IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B54

e1

9 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42S16320D-6BL by Integrated Silicon Solution

IS42S16320D-6BL

Integrated Silicon Solution

IS42S16320D-6BL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 166 MHz clock frequency. Featuring 3-STATE output, it operates at 3.3V and supports common I/O type. Ideal for commercial applications requiring fast memory access and sequential burst capabilities up to 8 words.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B54

13 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

250 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

IS42S16320D-7BLI by Integrated Silicon Solution

IS42S16320D-7BLI

Integrated Silicon Solution

IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B54

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

16

3

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

IS42S86400D-7TLI by Integrated Silicon Solution

IS42S86400D-7TLI

Integrated Silicon Solution

IS42S86400D-7TLI by Integrated Silicon Solution is a 64MX8 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

536870912 bit

SYNCHRONOUS DRAM

8

3

1

1

54

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS42S86400D-7TL by Integrated Silicon Solution

IS42S86400D-7TL

Integrated Silicon Solution

IS42S86400D-7TL by Integrated Silicon Solution is a 64MX8 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features self-refresh and supports common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

536870912 bit

SYNCHRONOUS DRAM

8

1

1

54

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M16A2P-7EIT:G by Micron Technology

MT48LC16M16A2P-7EIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast memory access in harsh environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC16M16A2F4-6A:G by Micron Technology

MT48LC16M16A2F4-6A:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC8M16A2TG-6A:L by Micron Technology

MT48LC8M16A2TG-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:L is a 8MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC4M16A2P-7EIT:J by Micron Technology

MT48LC4M16A2P-7EIT:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

W9864G6JT-6I by Winbond Electronics

W9864G6JT-6I

Winbond Electronics

W9864G6JT-6I by Winbond Electronics is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT48LC4M16A2P-6AIT:J by Micron Technology

MT48LC4M16A2P-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

AS4C8M16S-6TIN by Alliance Memory

AS4C8M16S-6TIN

Alliance Memory

Alliance Memory's AS4C8M16S-6TIN is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, 6 ns access time, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability. Package style: Small Outline, Thin Profile.

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3/e6

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

3

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

DRAMs

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

40

10.16 mm

IS42S16320D-7BLI-TR by Integrated Silicon Solution

IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B54

e1

13 mm

536870912 bit

CACHE DRAM MODULE

16

3

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC4M16A2P-75:GTR by Micron Technology

MT48LC4M16A2P-75:GTR

Micron Technology

Micron Technology's MT48LC4M16A2P-75:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 70°C max temp. It features self-refresh mode, small outline package, and dual terminal position. Ideal for commercial applications requiring fast access time and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

3

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

W9825G6JB-6I by Winbond Electronics

W9825G6JB-6I

Winbond Electronics

W9825G6JB-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for industrial applications requiring fast data processing and common I/O type. With a thin profile package style and self-refresh capability, it offers reliable performance in various electronic devices.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

80 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

80 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

IS42S16800F-5TLI by Integrated Silicon Solution

IS42S16800F-5TLI

Integrated Silicon Solution

IS42S16800F-5TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200 MHz clock frequency. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

130 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

IS42S16800F-6TL by Integrated Silicon Solution

IS42S16800F-6TL

Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports common I/O type. Ideal for commercial applications requiring fast memory access and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

IS42S16800F-7BL by Integrated Silicon Solution

IS42S16800F-7BL

Integrated Silicon Solution

IS42S16800F-7BL by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 143 MHz clock frequency. It operates at 3.3V, has a memory density of 134217728 bits, and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48H16M16LFBF-6:H by Micron Technology

MT48H16M16LFBF-6:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H16M16LFBF-6IT:H by Micron Technology

MT48H16M16LFBF-6IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H16M16LFBF-75:H by Micron Technology

MT48H16M16LFBF-75:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H32M16LFB4-6AT:C by Micron Technology

MT48H32M16LFB4-6AT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B54

8 mm

536870912 bit

DDR DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC16M8A2P-6A:L by Micron Technology

MT48LC16M8A2P-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M8A2P-6AIT:L by Micron Technology

MT48LC16M8A2P-6AIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M8A2P-7E:L by Micron Technology

MT48LC16M8A2P-7E:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC8M16A2B4-6A:L by Micron Technology

MT48LC8M16A2B4-6A:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

330 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2P-7EIT:L by Micron Technology

MT48LC8M16A2P-7EIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 143 MHz clock frequency. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC16M16A2P-7E:G by Micron Technology

MT48LC16M16A2P-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7E:G is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 143 MHz clock frequency. Ideal for commercial applications requiring fast access time and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M16A2P-7E:J by Micron Technology

MT48LC4M16A2P-7E:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48H32M16LFB4-6AAT:C by Micron Technology

MT48H32M16LFB4-6AAT:C

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Surface Mount: YES;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B54

8 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC16M16A2B4-7E:G by Micron Technology

MT48LC16M16A2B4-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:G is a 16MX16 DRAM with 3.3V supply, 143 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high-speed memory with common I/O type and self-refresh capability in a compact grid array package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC32M8A2P-6AIT:G by Micron Technology

MT48LC32M8A2P-6AIT:G

Micron Technology

Micron Technology's MT48LC32M8A2P-6AIT:G is a 32MX8 DRAM with 3.3V supply, operating at 167MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a small outline package style.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC4M16A2B4-6A:J by Micron Technology

MT48LC4M16A2B4-6A:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M16A2B4-6AIT:J by Micron Technology

MT48LC4M16A2B4-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2B4-6AIT:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M16A2B4-7E:J by Micron Technology

MT48LC4M16A2B4-7E:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M8A2P-6A:J by Micron Technology

MT48LC8M8A2P-6A:J

Micron Technology

Micron Technology's MT48LC8M8A2P-6A:J is a 3.3V Synchronous DRAM with 8MX8 organization, operating at 167MHz clock frequency. It features common I/O type, self-refresh mode, and 4096 refresh cycles. Ideal for commercial applications requiring high-speed memory access in a compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M16A2B4-6AAAT:L by Micron Technology

MT48LC8M16A2B4-6AAAT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

W9864G6KH-6I by Winbond Electronics

W9864G6KH-6I

Winbond Electronics

The Winbond Electronics W9864G6KH-6I is a 4MX16 Synchronous DRAM with 67108864-bit memory density. Operating at 3.3V, it features a max access time of 5ns and supports four bank page burst access mode. Ideal for commercial applications requiring high-speed memory solutions in compact form factors.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MT48LC16M16A2B4-6AAAT:G by Micron Technology

MT48LC16M16A2B4-6AAAT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAAT:G is a 16MX16 DRAM with 16777216 words, operating at 3.3V. It features synchronous operation, industrial temperature grade, and very thin profile package style. Ideal for applications requiring fast access time and high memory density in automotive electronics or industrial systems.

FOUR BANK PAGE BURST

5.4 ns

AUTO REFRESH

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT48LC16M16A2B4-6AAIT:G by Micron Technology

MT48LC16M16A2B4-6AAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAIT:G is a 16MX16 DRAM with 3.3V supply voltage, operating in synchronous mode. It features a grid array package style, very thin profile, and fine pitch terminals. Ideal for industrial applications requiring fast access time and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M16A2P-6AAIT:G by Micron Technology

MT48LC16M16A2P-6AAIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MT48LC16M16A2P-6AL:G by Micron Technology

MT48LC16M16A2P-6AL:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

10.16 mm