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MT48LC32M8A2P-6AIT:G

Micron Technology

MT48LC32M8A2P-6AIT:G by Micron Technology

Micron Technology's MT48LC32M8A2P-6AIT:G is a 32MX8 DRAM with 3.3V supply, operating at 167MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,226 parts In-Stock

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Chip Stock

USA . 4,200 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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North Shore Components

USA . 2,730 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,000 parts In-Stock

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Digiode

USA . 1,068 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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ComSIT Distribution GmbH

Germany . 42 parts In-Stock

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NAC Semi

USA . 23 parts In-Stock

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AZTECH Wire

Italy . 1,214 parts In-Stock

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$13.290

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Ampacity Inc.

Singapore . 336 parts In-Stock

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$27.000

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A-Z Elektronik GmbH

Germany . 8,277 parts In-Stock

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Perfect Parts

USA . 6,160 parts In-Stock

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Futuretech Components

Singapore . 2,261 parts In-Stock

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Corphita

USA . 1,407 parts In-Stock

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Authorized Procurement Solutions

USA . 818 parts In-Stock

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Kepictronics

USA . 446 parts In-Stock

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Microchip USA

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Aranea Global

USA . 100 parts In-Stock

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Overview

Experience superior performance and reliability with the MT48LC32M8A2P-6AIT:G by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers cutting-edge DRAM technology that exceeds expectations. Ideal for a wide range of applications, this synchronous DRAM offers exceptional value and benefits to customers looking for high-quality memory solutions. Trust Micron Technology to provide you with top-notch products that elevate your performance and efficiency. Unlock the possibilities with the MT48LC32M8A2P-6AIT:G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for data to be transmitted at a consistent pace, improving overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V ensures compatibility with a wide range of systems and devices, making it versatile and widely usable.

Maximum Clock Frequency (fCLK): 167 MHz

With a high clock frequency, this product can handle data processing at a fast rate, ideal for demanding applications.

Memory Density: 268435456 bit

High memory density allows for storing a large amount of data, making it suitable for tasks that require extensive memory usage.

Refresh Cycles: 8192

Efficient refresh cycles help maintain data integrity and prevent data loss, ensuring reliable performance over time.

Maximum Access Time: 5.4 ns

Low access time means quick retrieval of data, enhancing overall system responsiveness and speed.

Technical Specifications

DRAM MT48LC32M8A2P-6AIT:G attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

167 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.0025 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

MT48LC32M8A2P-6AIT:G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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