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IS42S86400D-7TLI

Integrated Silicon Solution

IS42S86400D-7TLI by Integrated Silicon Solution

IS42S86400D-7TLI by Integrated Silicon Solution is a 64MX8 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring high memory density and fast access times.

Median Price

$16.480

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 281 parts In-Stock

1+ parts

$16.480

100+ parts

$15.150

1k+ parts

$12.750

10k+ parts

-

281

$16.480

$15.150

$12.750

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$14.189

100+ parts

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50

$14.189

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Vyrian

USA . 5,527 parts In-Stock

1+ parts

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5,527

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Chip Stock

USA . 2,580 parts In-Stock

1+ parts

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2,580

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 394 parts In-Stock

1+ parts

$13.178

100+ parts

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394

$13.178

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Netroflash

USA . 50 parts In-Stock

1+ parts

$14.189

100+ parts

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50

$14.189

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Microchip USA

USA . 213 parts In-Stock

1+ parts

$36.480

100+ parts

$35.960

1k+ parts

$35.690

10k+ parts

$35.430

213

$36.480

$35.960

$35.690

$35.430

Perfect Parts

USA . 3,638 parts In-Stock

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3,638

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Overview

Experience seamless performance and reliability with the IS42S86400D-7TLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality DRAM components that promise a wide range of applications. From common input/output types to self-refresh capabilities, this product offers unmatched value and benefits to customers seeking high-performance memory solutions. Enhance your systems with the cutting-edge technology and superior features that ISS provides, setting new standards for efficiency and productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, making it suitable for various applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient and synchronized data transfer, enhancing overall performance.

Nominal Supply Voltage / Vsup: 3.3V

Stable supply voltage ensures consistent and reliable operation of the product.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Compact and thin profile design makes it suitable for space-constrained applications.

Maximum Clock Frequency (fCLK): 143 MHz

High clock frequency allows faster data processing and improved system speed.

Temperature Grade: INDUSTRIAL

Industrial temperature rating ensures reliable performance in harsh environmental conditions.

Memory IC Type: SYNCHRONOUS DRAM

Being a Synchronous DRAM, it offers faster data transfer rates and improved efficiency.

Technical Specifications

DRAM IS42S86400D-7TLI attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

143 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.004 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

IS42S86400D-7TLI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.28

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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