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RECTANGULAR Transient Suppression Devices 2,400+

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
AK6-076C-12 by Littelfuse

AK6-076C-12

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

95 V

85 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

76 V

NO

AVALANCHE

THROUGH-HOLE

NOT SPECIFIED

AK6-170C-12 by Littelfuse

AK6-170C-12

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Minimum Breakdown Voltage: 180 V;

220 V

180 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

170 V

NO

AVALANCHE

THROUGH-HOLE

NOT SPECIFIED

AK6-190C-12 by Littelfuse

AK6-190C-12

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Repetitive Peak Reverse Voltage: 190 V;

245 V

200 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

190 V

NO

AVALANCHE

THROUGH-HOLE

NOT SPECIFIED

AK6-240C-12 by Littelfuse

AK6-240C-12

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Minimum Breakdown Voltage: 250 V;

285 V

250 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

240 V

NO

AVALANCHE

THROUGH-HOLE

NOT SPECIFIED

AK6-380C-12 by Littelfuse

AK6-380C-12

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

443 V

401 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

380 V

NO

AVALANCHE

THROUGH-HOLE

NOT SPECIFIED

AK6-430C-12 by Littelfuse

AK6-430C-12

Littelfuse

AK6-430C-12 by Littelfuse is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a breakdown voltage range of 440-490V. It operates b/w -55°C to 125°C, meeting IEC and UL standards for transient suppression in various electronic applications. The device features avalanche technology, through-hole terminals, and is ideal for protecting circuits from voltage spikes.

490 V

440 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

NOT SPECIFIED

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

430 V

NO

AVALANCHE

THROUGH-HOLE

NOT SPECIFIED

D58V0M4U8MR-13 by Diodes Incorporated

D58V0M4U8MR-13

Diodes Incorporated

D58V0M4U8MR-13 by Diodes Inc. is a TRANS VOLTAGE SUPPRESSOR DIODE with 58V VRWM, 2700W Pd, and -65 to 150°C operating temp. Commonly used in transient suppression applications due to its UNIDIRECTIONAL polarity and AVALANCHE technology for surge protection.

71.2 V

64.4 V

COMMON CATHODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G8

e3

1

2700 W

4

8

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

58 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

ESD7361P2T5G by Onsemi

ESD7361P2T5G

Onsemi

ESD7361P2T5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 16V max repetitive peak reverse voltage and 34V max clamping voltage. It operates b/w -55 to 125 °C, complies with IEC-61000-4-2, 4-4, 4-5 standards, and is ideal for transient suppression applications in electronics.

ULTRA LOW CAPACITANCE

16.5 V

34 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

16 V

1 uA

15 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

ESD7361XV2T1G by Onsemi

ESD7361XV2T1G

Onsemi

ESD7361XV2T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 16V max repetitive peak reverse voltage and 34V max clamping voltage. It operates b/w -55 to 125 °C, complies with IEC-61000-4-2, 4-4, 4-5 standards, and is ideal for transient suppression applications in electronics due to its avalanche technology.

ULTRA LOW CAPACITANCE

16.5 V

34 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

16 V

1 uA

15 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

ESD7461N2T5G by Onsemi

ESD7461N2T5G

Onsemi

ESD7461N2T5G by Onsemi is a single transient suppression device with 16.5V breakdown voltage, ideal for protecting electronic circuits. It features bidirectional polarity, avalanche technology, and 39V clamping voltage. This chip carrier package has a max power dissipation of 0.3W and operates b/w -55°C to 150°C.

16.5 V

16.5 V

39 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

BIDIRECTIONAL

.3 W

IEC-61000-4-2, 4-4, 4-5

16 V

Transient Suppressors

YES

AVALANCHE

NICKEL GOLD PALLADIUM

NO LEAD

BOTTOM

30

SZESD7351XV2T1G by Onsemi

SZESD7351XV2T1G

Onsemi

SZESD7351XV2T1G by Onsemi is a single transient suppression device with a breakdown voltage of 5V. It features a unidirectional diode type and avalanche technology, suitable for protecting electronic circuits from voltage spikes. With a max clamping voltage of 10V, it is ideal for applications requiring reliable overvoltage protection in harsh environments.

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

5 V

5 V

10 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.15 W

AEC-Q101; IEC-61000-4-5

3.3 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

CD214C-T30ALF by Bourns

CD214C-T30ALF

Bourns

CD214C-T30ALF by Bourns is a single, surface mount transient suppression device with a max non-repetitive peak reverse power dissipation of 400W. It has a min breakdown voltage of 33.3V and max breakdown voltage of 38.3V. This diode is commonly used for avalanche protection in various electronic applications.

38.3 V

33.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

400 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

Not Qualified

30 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

CD214C-T33ALF by Bourns

CD214C-T33ALF

Bourns

Bourns CD214C-T33ALF is a unidirectional Trans Voltage Suppressor Diode with 33V VRWM. It has a Pd of 5W and Ppk of 400W, making it ideal for transient suppression in electronic circuits. This SMD device features avalanche technology and matte tin finish on dual terminals.

42.2 V

36.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

400 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

Not Qualified

33 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

CD214C-T36ALF by Bourns

CD214C-T36ALF

Bourns

Bourns CD214C-T36ALF is a unidirectional Trans Voltage Suppressor Diode with 36V max repetitive peak reverse voltage. It has a max power dissipation of 5W and avalanche technology for surge protection. Ideal for transient suppression in electronic circuits, offering high reliability in small outline package.

46 V

40 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AB

R-PDSO-C2

e3

1

400 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

Not Qualified

36 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

NUP2105LT1 by Onsemi

NUP2105LT1

Onsemi

NUP2105LT1 by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used for surge protection in electronic circuits due to its bidirectional polarity and silicon diode element material.

LOW CAPACITANCE

32 V

26.2 V

29.1 V

CATHODE

44 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-236AB

R-PDSO-G3

e0

1

350 W

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

BIDIRECTIONAL

Not Qualified

24 V

Transient Suppressors

YES

AVALANCHE

TIN LEAD

GULL WING

DUAL

NUP4201MR6T1G by Onsemi

NUP4201MR6T1G

Onsemi

NUP4201MR6T1G by Onsemi is a unidirectional avalanche diode with 6V breakdown voltage and 500W peak power dissipation. Ideal for transient suppression in electronics, it operates b/w -40 to 125°C, complies with IEC-61000-4-2, 4-4 standards, and features a gull wing terminal form.

LOW CAPACITANCE

6 V

6 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

e3

1

500 W

1

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

Not Qualified

IEC-61000-4-2, 4-4

5 V

Transient Suppressors

YES

AVALANCHE

Tin (Sn)

GULL WING

DUAL

40

MMQA13VT1G by Onsemi

MMQA13VT1G

Onsemi

MMQA13VT1G by Onsemi is a transient suppression device with common anode configuration, 4 elements, and max power dissipation of 150W. It has a breakdown voltage of 13V and is ideal for protecting electronic circuits from voltage spikes in various applications.

13.7 V

12.4 V

13 V

18.6 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

.9 V

R-PDSO-G6

e3

1

150 W

4

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.225 W

Not Qualified

9.8 V

.075 uA

9.8 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

30

MMQA22VT1G by Onsemi

MMQA22VT1G

Onsemi

MMQA22VT1G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a breakdown voltage of 22V, max power dissipation of 0.225W, and operates b/w -55 to 150 °C. Ideal for protecting electronic circuits from voltage spikes in various applications.

23.1 V

20.9 V

22 V

31.7 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

.9 V

R-PDSO-G6

e3

1

150 W

4

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.225 W

Not Qualified

17 V

.075 uA

17 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

30

MMQA24VT1G by Onsemi

MMQA24VT1G

Onsemi

MMQA24VT1G by Onsemi is a transient suppression device with common anode configuration, 4 elements, and max power dissipation of 0.225W. It has a breakdown voltage of 24V and is ideal for protecting electronic circuits from voltage spikes in applications such as automotive electronics and industrial control systems.

25.2 V

22.8 V

24 V

34.6 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

.9 V

R-PDSO-G6

e3

1

150 W

4

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.225 W

Not Qualified

18 V

.075 uA

18 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

30

MMQA30VT1G by Onsemi

MMQA30VT1G

Onsemi

MMQA30VT1G by Onsemi is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 150W and breakdown voltage of 30V. Ideal for applications requiring protection against voltage transients in electronic circuits.

31.5 V

28.5 V

30 V

43.3 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

e3

1

150 W

4

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.225 W

Not Qualified

23 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

SMF24CT1G by Onsemi

SMF24CT1G

Onsemi

SMF24CT1G by Onsemi is a transient suppression device with 5 common anode elements. It has a max power dissipation of 100W, breakdown voltage of 29.3V, and operates b/w -40 to 125 °C. Ideal for protecting circuits from voltage spikes in various electronic applications.

32 V

26.7 V

29.3 V

44 V

COMMON ANODE, 5 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

e3

1

100 W

5

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

Not Qualified

24 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

30

NUP2105LT3G by Onsemi

NUP2105LT3G

Onsemi

NUP2105LT3G by Onsemi is a Trans Voltage Suppressor Diode with 2 elements, offering bidirectional protection. It has a max clamping voltage of 44V and can handle non-repetitive peak reverse power dissipation up to 350W. Commonly used in applications requiring transient suppression for voltages b/w 26.2V to 32V.

LOW CAPACITANCE

32 V

26.2 V

29.1 V

44 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-236AB

R-PDSO-G3

e3

350 W

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

Not Qualified

24 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

NCP362AMUTBG by Onsemi

NCP362AMUTBG

Onsemi

NCP362AMUTBG by Onsemi is a 10-terminal TRANS VOLTAGE SUPPRESSOR DIODE with 5V breakdown voltage, suitable for transient suppression applications. With avalanche technology and unidirectional polarity, it operates up to 150 °C, making it ideal for surface mount designs requiring high-performance protection.

5.4 V

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XDSO-N10

e3

10

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

Not Qualified

5 V

YES

AVALANCHE

MATTE TIN

NO LEAD

DUAL

NCP362BMUTBG by Onsemi

NCP362BMUTBG

Onsemi

NCP362BMUTBG by Onsemi is a 10-terminal TRANS VOLTAGE SUPPRESSOR DIODE with 5.4V breakdown voltage, ideal for transient suppression applications. With avalanche technology and unidirectional polarity, it offers reliable protection up to 150 °C operating temperature in a small outline package. Suitable for surface mount designs requiring high-performance diode elements.

5.4 V

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XDSO-N10

e3

10

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

Not Qualified

5 V

YES

AVALANCHE

MATTE TIN

NO LEAD

DUAL

NUC2401MNTAG by Onsemi

NUC2401MNTAG

Onsemi

NUC2401MNTAG by Onsemi is a 3-element TRANS VOLTAGE SUPPRESSOR DIODE with avalanche technology. It has a breakdown voltage range of 6-8.6V and unidirectional polarity, suitable for transient suppression applications in electronics. This surface-mount device comes in a small outline package with 8 terminals.

8.6 V

6 V

SEPARATE, 3 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XDSO-N8

e3

3

8

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

Not Qualified

5 V

YES

AVALANCHE

TIN

NO LEAD

DUAL

1SMA11CAT3G by Onsemi

1SMA11CAT3G

Onsemi

1SMA11CAT3G by Onsemi is a Zener diode with bidirectional polarity and a breakdown voltage range of 12.2V to 13.48V. It has a max clamping voltage of 18.2V, making it ideal for transient suppression in electronic circuits. With a peak power dissipation of 400W, this device can operate b/w -65 °C to 150°C efficiently in various applications.

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

13.48 V

12.2 V

12.84 V

18.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

.5 W

Not Qualified

11 V

Transient Suppressors

YES

ZENER

TIN

C BEND

DUAL

1SMA43CAT3G by Onsemi

1SMA43CAT3G

Onsemi

1SMA43CAT3G by Onsemi is a Zener diode with bidirectional polarity and a breakdown voltage of 52.83V. It has a max clamping voltage of 69.4V and can dissipate up to 400W power. Ideal for transient suppression in electronics, it operates b/w -65 °C to 150°C, making it suitable for various applications requiring surge protection.

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

52.83 V

47.8 V

50.3 V

69.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

.5 W

Not Qualified

43 V

Transient Suppressors

YES

ZENER

Tin (Sn)

C BEND

DUAL

40

1SMA51AT3G by Onsemi

1SMA51AT3G

Onsemi

1SMA51AT3G by Onsemi is a Zener technology TRANS VOLTAGE SUPPRESSOR DIODE with a breakdown voltage of 56.7-62.7V and clamping voltage of 82.4V, ideal for transient suppression in electronic circuits. This single-config device has a max power dissipation of 0.5W in a small outline package suitable for surface mount applications.

HIGH RELIABILITY

62.7 V

56.7 V

59.7 V

82.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.5 W

Not Qualified

51 V

Transient Suppressors

YES

ZENER

TIN

C BEND

DUAL

1SMA64AT3G by Onsemi

1SMA64AT3G

Onsemi

1SMA64AT3G by Onsemi is a Zener diode with a breakdown voltage of 74.85V and max clamping voltage of 103V. It is a unidirectional transient suppression device in a small outline package, ideal for protecting electronic circuits from voltage spikes in surface mount applications.

HIGH RELIABILITY

78.6 V

71.1 V

74.85 V

103 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.5 W

Not Qualified

64 V

Transient Suppressors

YES

ZENER

TIN

C BEND

DUAL

1SMA75AT3G by Onsemi

1SMA75AT3G

Onsemi

1SMA75AT3G by Onsemi is a Zener diode with 75V max repetitive peak reverse voltage, 400W non-repetitive peak power dissipation, and 121V max clamping voltage. Ideal for transient suppression in electronic circuits requiring protection against voltage spikes.

HIGH RELIABILITY

92.1 V

83.3 V

87.7 V

121 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.5 W

Not Qualified

75 V

Transient Suppressors

YES

ZENER

TIN

C BEND

DUAL

NZL5V6ATT1G by Onsemi

NZL5V6ATT1G

Onsemi

NZL5V6ATT1G by Onsemi is a Zener diode with 5.6V nominal reference voltage and 5.3% max voltage tolerance. It is a transient suppression device with common anode configuration, suitable for applications requiring protection against voltage spikes in electronic circuits. The device operates b/w -55 to 150 °C and features a small outline package style for surface mount assembly.

LOW CAPACITANCE

5.9 V

5.3 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.15 W

Not Qualified

5.6 V

Voltage Reference Diodes

YES

ZENER

TIN

GULL WING

DUAL

30

5.3 %

1 mA

P6SMB11AT3G by Onsemi

P6SMB11AT3G

Onsemi

P6SMB11AT3G by Onsemi is a Zener technology TRANS VOLTAGE SUPPRESSOR DIODE with 600W power dissipation, 11V breakdown voltage, and 15.6V clamping voltage. It is used for transient suppression in electronic circuits to protect against voltage spikes and surges.

HIGH RELIABILITY

11.6 V

10.5 V

11 V

15.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.55 W

Not Qualified

UL RECOGNIZED

9.4 V

Transient Suppressors

YES

ZENER

Tin (Sn)

C BEND

DUAL

40

P6SMB13CAT3G by Onsemi

P6SMB13CAT3G

Onsemi

P6SMB13CAT3G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 600W peak power dissipation and 13V breakdown voltage. Ideal for transient suppression applications in electronics, it features bidirectional polarity and a max clamping voltage of 18.2V.

HIGH RELIABILITY

13.7 V

12.4 V

13 V

18.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

600 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

.55 W

Not Qualified

UL RECOGNIZED

11.1 V

Transient Suppressors

YES

ZENER

TIN

C BEND

DUAL

P6SMB75CAT3G by Onsemi

P6SMB75CAT3G

Onsemi

P6SMB75CAT3G by Onsemi is a Zener diode with 600W peak power dissipation, 75V breakdown voltage, and 103V clamping voltage. It is used for transient suppression in electronic circuits to protect against voltage spikes. The device comes in a small outline package with dual terminals for surface mount applications.

HIGH RELIABILITY

78.8 V

71.3 V

75 V

103 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

.55 W

Not Qualified

UL RECOGNIZED

64.1 V

Transient Suppressors

YES

ZENER

TIN

C BEND

DUAL

SMF100AT1G by Onsemi

SMF100AT1G

Onsemi

SMF100AT1G by Onsemi is a Zener diode with 100V peak reverse voltage, 117V breakdown voltage, and 162V clamping voltage. It is used in transient suppression applications to protect circuits from voltage spikes.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

123 V

111 V

117 V

162 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

100 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF110AT1G by Onsemi

SMF110AT1G

Onsemi

SMF110AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 128.5V breakdown voltage, and 177V clamping voltage. It is used in transient suppression applications due to its unidirectional polarity and silicon diode element material.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

135 V

122 V

128.5 V

177 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

110 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF130AT1G by Onsemi

SMF130AT1G

Onsemi

SMF130AT1G by Onsemi is a Zener diode with 130V peak reverse voltage, 1000W power dissipation, and 151.5V breakdown voltage. Ideal for transient suppression in electronics due to its unidirectional polarity and max clamping voltage of 209V.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

159 V

144 V

151.5 V

209 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

130 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF150AT1G by Onsemi

SMF150AT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

185 V

167 V

176 V

243 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

150 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF160AT1G by Onsemi

SMF160AT1G

Onsemi

SMF160AT1G by Onsemi is a Zener diode with a max power dissipation of 0.385W and a breakdown voltage range of 178-197V, ideal for transient suppression in electronic circuits. With a peak clamping voltage of 259V and unidirectional polarity, it offers protection against voltage spikes during operation. This single-configured device comes in a small outline package suitable for surface mount applications.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

197 V

178 V

187.5 V

259 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

160 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF16AT1G by Onsemi

SMF16AT1G

Onsemi

SMF16AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 18.75V breakdown voltage, and 26V clamping voltage. Ideal for transient suppression in electronic circuits due to its unidirectional polarity and silicon material.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

19.7 V

17.8 V

18.75 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

16 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF170AT1G by Onsemi

SMF170AT1G

Onsemi

SMF170AT1G by Onsemi is a Zener diode with 170V peak reverse voltage, 1000W power dissipation, and 275V clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

209 V

189 V

199 V

275 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

170 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF17AT1G by Onsemi

SMF17AT1G

Onsemi

SMF17AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 19.9V breakdown voltage, and 27.6V clamping voltage. It is used in transient suppression applications due to its unidirectional polarity and silicon diode element material, making it suitable for protecting electronic circuits from voltage spikes during operation.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

20.9 V

18.9 V

19.9 V

27.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

17 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF40AT1G by Onsemi

SMF40AT1G

Onsemi

SMF40AT1G by Onsemi is a Zener diode with 40V max repetitive peak reverse voltage, 1000W non-repetitive peak power dissipation, and 64.5V max clamping voltage. Ideal for transient suppression in electronic circuits requiring protection against voltage spikes.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

49.1 V

44.4 V

46.8 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

40 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF43AT1G by Onsemi

SMF43AT1G

Onsemi

SMF43AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 50.3V breakdown voltage, and 69.4V clamping voltage. Ideal for transient suppression in electronic circuits due to its unidirectional polarity and high breakdown voltages.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

52.8 V

47.8 V

50.3 V

69.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

43 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF45AT1G by Onsemi

SMF45AT1G

Onsemi

SMF45AT1G by Onsemi is a Zener diode with 45V peak reverse voltage, 1000W power dissipation, and 52.65V breakdown voltage. It is used for transient suppression in applications requiring unidirectional polarity protection and a max clamping voltage of 72.7V.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

55.3 V

50 V

52.65 V

72.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

45 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF54AT1G by Onsemi

SMF54AT1G

Onsemi

SMF54AT1G by Onsemi is a Zener diode with 54V peak reverse voltage, 1000W power dissipation, and 87.1V clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDANCE, EXCELLENT CLAMPING CAPABILITY

66.3 V

60 V

63.15 V

87.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

54 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF60AT1G by Onsemi

SMF60AT1G

Onsemi

SMF60AT1G by Onsemi is a Zener diode with 1000W peak power dissipation, 70.2V breakdown voltage, and 96.8V clamping voltage. It is used for transient suppression in applications requiring unidirectional polarity protection in surface-mount configurations.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

73.7 V

66.7 V

70.2 V

96.8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

60 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL

SMF64AT1G by Onsemi

SMF64AT1G

Onsemi

SMF64AT1G by Onsemi is a Zener diode with 64V max repetitive peak reverse voltage, 1000W non-repetitive peak power dissipation, and 103V max clamping voltage. It is used for transient suppression in electronic circuits.

LOW IMPEDENCE, EXCELLENT CLAMPING CAPABILITY

78.6 V

71.1 V

74.85 V

103 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

1000 W

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.385 W

Not Qualified

64 V

Transient Suppressors

YES

ZENER

TIN

FLAT

DUAL