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SMF24CT1G

Onsemi

SMF24CT1G by Onsemi

SMF24CT1G by Onsemi is a transient suppression device with 5 common anode elements. It has a max power dissipation of 100W, breakdown voltage of 29.3V, and operates b/w -40 to 125 °C. Ideal for protecting circuits from voltage spikes in various electronic applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 31,000 parts In-Stock

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Vyrian

USA . 5,539 parts In-Stock

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Flip Electronics

USA . 2,000 parts In-Stock

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Digiode

USA . 777 parts In-Stock

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AZTECH Wire

Italy . 985 parts In-Stock

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$21.570

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985

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Component Stockers USA

USA . 597 parts In-Stock

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$99.990

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Kepictronics

USA . 34,289 parts In-Stock

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Perfect Parts

USA . 11,890 parts In-Stock

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RC Electronics

USA . 5,400 parts In-Stock

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TANS Electronics

Latvia . 3,726 parts In-Stock

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Kulean Microsystems

USA . 3,530 parts In-Stock

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Problanco Electronics

Mexico . 2,671 parts In-Stock

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Corphita

USA . 1,850 parts In-Stock

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GreenTree Electronics

Israel . 1,528 parts In-Stock

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UHIMA Technologies

Türkiye . 895 parts In-Stock

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SupplyDigital Components

Austria . 865 parts In-Stock

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Corohmni

South Africa . 119 parts In-Stock

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Overview

Discover the power of protection with the SMF24CT1G by Onsemi. As a leader in the field of Transient Suppression Devices, Onsemi brings you a product that combines quality and reliability in one package. With its common anode configuration and 5 elements, this device is designed to safeguard your electronics from voltage surges and spikes. Trust in Onsemi to provide you with a solution that offers peace of mind and security for all your applications. Choose the SMF24CT1G for superior performance and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the components inside, ensuring durability and reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

Can handle high power surges and transient events without getting damaged, offering robust protection for electronic devices.

Nominal Breakdown Voltage: 29.3 V

Provides precise and consistent voltage protection, ensuring that the voltage spikes above this level are clamped down effectively.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without compromising performance, making it suitable for a wide range of applications.

Terminal Finish: TIN

Tin finish provides good conductivity and corrosion resistance, enhancing the overall performance and lifespan of the device.

Technical Specifications

Transient Suppression Devices SMF24CT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

26.7 V

Nominal Breakdown Voltage:

29.3 V

Maximum Clamping Voltage:

44 V

Config:

COMMON ANODE, 5 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

5

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

24 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMF24CT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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