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NUP4201MR6T1G

Onsemi

NUP4201MR6T1G by Onsemi

NUP4201MR6T1G by Onsemi is a unidirectional avalanche diode with 6V breakdown voltage and 500W peak power dissipation. Ideal for transient suppression in electronics, it operates b/w -40 to 125°C, complies with IEC-61000-4-2, 4-4 standards, and features a gull wing terminal form.

Median Price

$0.214

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 22 parts In-Stock

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$0.214

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$0.202

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$0.182

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22

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Chip1Stop

Japan . 991 parts In-Stock

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Digiode

USA . 2,074 parts In-Stock

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$0.203

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Nova Conductors

Japan . 10 parts In-Stock

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$0.380

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$0.380

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Component Electronics Inc.

Canada . 94 parts In-Stock

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$2.310

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$1.730

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$1.500

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94

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Vyrian

USA . 11,654 parts In-Stock

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Chip Stock

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Speed Components Ltd

Israel . 2,799 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,457 parts In-Stock

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Sensible Micro Corp

USA . 1,767 parts In-Stock

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Semtec, LLC

USA . 1,370 parts In-Stock

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Bristol Electronics

USA . 1,200 parts In-Stock

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Innovative Industries

USA . 276 parts In-Stock

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Cyclops Electronics Ltd

UK . 159 parts In-Stock

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Vectronix, Inc

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Velocity Electronics

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Distributors (Availability)

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.103

100+ parts

$0.098

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$0.098

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500

$0.103

$0.098

$0.098

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Aztec Data Supply Inc.

USA . 14,392 parts In-Stock

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$0.140

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$0.140

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Ampacity Inc.

Singapore . 288 parts In-Stock

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$0.182

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288

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Corphita

USA . 1,939 parts In-Stock

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$0.193

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Component Stockers USA

USA . 28 parts In-Stock

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$0.210

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Corohmni

South Africa . 151 parts In-Stock

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$0.214

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Continental Prestige Electronics

USA . 4,842 parts In-Stock

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$0.380

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$0.372

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Argo Parts USA

USA . 65 parts In-Stock

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$0.380

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$0.368

65

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Netroflash

USA . 50 parts In-Stock

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$0.380

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$0.372

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AZTECH Wire

Italy . 881 parts In-Stock

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$18.680

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Metaverse IC Inc.

Canada . 61,000 parts In-Stock

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iodParts Technologies Inc.

India . 47,800 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 6,039 parts In-Stock

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Singapore . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,867 parts In-Stock

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Kulean Microsystems

USA . 2,326 parts In-Stock

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Problanco Electronics

Mexico . 549 parts In-Stock

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Lixinc

USA . 459 parts In-Stock

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UHIMA Technologies

Türkiye . 162 parts In-Stock

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SupplyDigital Components

Austria . 102 parts In-Stock

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ChipstoGo Electronic ltd

UK . 50 parts In-Stock

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Overview

Experience superior transient suppression with the NUP4201MR6T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that are reliable and efficient. The NUP4201MR6T1G is a single configuration transient suppression device that offers unmatched protection for your electronic components. With a maximum clamping voltage of 20V and a nominal breakdown voltage of 6V, this diode is perfect for a wide range of applications. Trust Onsemi to provide you with the best solution for your protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the component, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High maximum non repetitive peak reverse power dissipation allows the device to handle transient voltage spikes effectively, protecting the circuit from damage.

Nominal Breakdown Voltage: 6 V

The nominal breakdown voltage of 6V indicates the point at which the device will conduct and clamp voltage spikes, safeguarding connected equipment.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this device can be used in a wide range of environments without risk of overheating or performance degradation.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and solderability, ensuring reliable connections in the circuit.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this product is specifically designed to protect electronic circuits from voltage spikes, making it an ideal choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices NUP4201MR6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

6 V

Maximum Clamping Voltage:

20 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

NUP4201MR6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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