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NUP4105MUTAG

Onsemi

NUP4105MUTAG by Onsemi

NUP4105MUTAG by Onsemi is a single transient suppression device with a breakdown voltage of 5.3V and max clamping voltage of 14V. It is a surface-mount diode ideal for protecting electronic circuits from voltage spikes in applications requiring avalanche technology. Operating temperature ranges from -40 to 125 °C, making it suitable for various industrial environments.

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3

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1k+

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Chip Stock

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Digiode

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AZTECH Wire

Italy . 69 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

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Kulean Microsystems

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SupplyDigital Components

Austria . 5,287 parts In-Stock

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Problanco Electronics

Mexico . 2,594 parts In-Stock

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Corphita

USA . 1,960 parts In-Stock

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TANS Electronics

Latvia . 1,173 parts In-Stock

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UHIMA Technologies

Türkiye . 536 parts In-Stock

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Futuretech Components

Singapore . 500 parts In-Stock

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Overview

Elevate your electrical system with the NUP4105MUTAG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality in their Transient Suppression Devices. This versatile product is ideal for a wide range of applications, offering superior protection against voltage spikes and surges. With a nominal breakdown voltage of 5.3V and maximum clamping voltage of 14V, this device ensures reliable performance in any situation. Trust Onsemi to provide you with the value, benefits, and advantages you need to keep your electronics safe and running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the product durable and resistant to environmental factors, ensuring a long lifespan.

Config: SINGLE

Single configuration simplifies installation and maintenance of the transient suppression device.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration into circuit boards.

Nominal Breakdown Voltage: 5.3 V

A breakdown voltage of 5.3 V provides effective protection against voltage spikes and surges within the specified range.

Package Shape: SQUARE

Square package shape enables compact placement on circuit boards, optimizing space utilization.

No. of Terminals: 10

Having 10 terminals allows for versatile connection options in various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes the device suitable for applications where space is limited.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125 °C ensures reliable performance even in challenging thermal conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C enables the device to function effectively in a wide range of environments.

Terminal Finish: TIN

TIN terminal finish promotes good conductivity and enhances the reliability of electrical connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in installation and connection orientations.

Minimum Breakdown Voltage: 5 V

The minimum breakdown voltage of 5 V ensures protection even at lower voltage levels.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C allows for reliable soldering during assembly processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type offers efficient transient voltage suppression performance.

Technology: AVALANCHE

Avalanche technology ensures rapid response to voltage transients, enhancing overall protection capability.

Terminal Form: NO LEAD

No lead terminal form simplifies the mounting process and reduces the risk of mechanical failure.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

A maximum repetitive peak reverse voltage of 3.3 V provides effective protection against reverse voltage conditions.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that voltage spikes are directed away from the protected circuit, enhancing safety.

Maximum Clamping Voltage: 14 V

Maximum clamping voltage of 14 V limits the voltage level during suppression, preventing damage to connected devices.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, low leakage, and excellent performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices NUP4105MUTAG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

5 V

Nominal Breakdown Voltage:

5.3 V

Maximum Clamping Voltage:

14 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NUP4105MUTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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