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NUP4102XV6T1G

Onsemi

NUP4102XV6T1G by Onsemi

NUP4102XV6T1G by Onsemi is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 15.7 V, max power dissipation of 75 W, and operates b/w -40 to 125 °C. Ideal for applications requiring bidirectional protection against voltage transients in compact SMD designs.

Median Price

$0.175

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,100 parts In-Stock

1+ parts

$0.247

100+ parts

$0.212

1k+ parts

$0.202

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-

3,100

$0.247

$0.212

$0.202

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Mouser Electronics

USA . 23,476 parts In-Stock

1+ parts

$0.710

100+ parts

$0.294

1k+ parts

$0.209

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23,476

$0.710

$0.294

$0.209

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Rochester

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

$0.189

1k+ parts

$0.157

10k+ parts

$0.140

23,000

-

$0.189

$0.157

$0.140

Verical

USA . 23,000 parts In-Stock

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$0.175

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$0.175

Arrow

USA . 4,000 parts In-Stock

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$0.145

4,000

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$0.145

Farnell

UK . 3,170 parts In-Stock

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-

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$0.145

1k+ parts

$0.138

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$0.135

3,170

-

$0.145

$0.138

$0.135

Element14

Singapore . 3,170 parts In-Stock

1+ parts

-

100+ parts

$0.248

1k+ parts

$0.231

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$0.227

3,170

-

$0.248

$0.231

$0.227

Chip1Stop

Japan . 2,990 parts In-Stock

1+ parts

-

100+ parts

$0.142

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$0.132

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$0.127

2,990

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$0.142

$0.132

$0.127

DigiKey

USA . 2,885 parts In-Stock

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$0.161

2,885

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$0.161

Distributors (In-Stock)

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Digiode

USA . 2,304 parts In-Stock

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$0.146

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Nova Conductors

Japan . 10 parts In-Stock

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$0.202

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10

$0.202

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Chip Stock

USA . 62,000 parts In-Stock

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Vyrian

USA . 11,978 parts In-Stock

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Flip Electronics

USA . 8,000 parts In-Stock

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Prism Electronics

USA . 339 parts In-Stock

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Bristol Electronics

USA . 100 parts In-Stock

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100

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LWI Electronics Inc

India . 90 parts In-Stock

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90

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Extreme Components

USA . 10 parts In-Stock

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10

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,668 parts In-Stock

1+ parts

$0.040

100+ parts

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1,668

$0.040

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Semicontronic

India . 11,777 parts In-Stock

1+ parts

$0.113

100+ parts

$0.110

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$0.110

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11,777

$0.113

$0.110

$0.110

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Ampacity Inc.

Singapore . 11,496 parts In-Stock

1+ parts

$0.113

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11,496

$0.113

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Corohmni

South Africa . 309 parts In-Stock

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$0.135

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309

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Corphita

USA . 894 parts In-Stock

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$0.139

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894

$0.139

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Argo Parts USA

USA . 2,721 parts In-Stock

1+ parts

$0.201

100+ parts

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$0.195

2,721

$0.201

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$0.195

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.202

100+ parts

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$0.192

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$0.188

500

$0.202

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$0.192

$0.188

Perfect Parts

USA . 32,859 parts In-Stock

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Continental Prestige Electronics

USA . 10,990 parts In-Stock

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$0.268

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$0.163

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$0.127

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$0.268

$0.163

$0.127

GreenTree Electronics

Israel . 9,808 parts In-Stock

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Problanco Electronics

Mexico . 8,260 parts In-Stock

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Kulean Microsystems

USA . 8,046 parts In-Stock

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Lixinc

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A-Z Elektronik GmbH

Germany . 5,999 parts In-Stock

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SupplyDigital Components

Austria . 4,938 parts In-Stock

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Glotronic Ltd.

UK . 3,200 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 765 parts In-Stock

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765

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TANS Electronics

Latvia . 674 parts In-Stock

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Futuretech Components

Singapore . 500 parts In-Stock

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Overview

Discover the power of protection with the NUP4102XV6T1G by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi delivers top-quality products that ensure reliability and safety in various applications. This common anode, 4-element device offers superior performance with a nominal breakdown voltage of 15.7V and a maximum clamping voltage of 25V. Whether you're safeguarding sensitive electronics or enhancing system efficiency, this product provides unmatched value, benefits, and advantages for all your needs. Trust Onsemi to keep your devices secure and functioning at their best.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 75 W

With a high maximum non repetitive peak reverse power dissipation of 75W, this product can handle surges and spikes effectively, providing reliable protection for connected devices.

Nominal Breakdown Voltage: 15.7 V

The nominal breakdown voltage of 15.7V ensures that the product activates when the voltage exceeds this level, safeguarding your electronics from overvoltage events.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current of 0.1uA indicates minimal leakage current in normal operating conditions, enhancing the efficiency of the product.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high temperatures, making it suitable for a wide range of operating environments.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C ensures functionality even in cold environments, providing consistent protection throughout different weather conditions.

Reference Standard: IEC61000-4-2

Compliance with the IEC61000-4-2 standard ensures that this product meets rigorous industry requirements for transient suppression devices, guaranteeing its reliability and performance.

Technical Specifications

Transient Suppression Devices NUP4102XV6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

17.8 V

Minimum Breakdown Voltage:

13.6 V

Nominal Breakdown Voltage:

15.7 V

Maximum Clamping Voltage:

25 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

75 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

IEC61000-4-2

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NUP4102XV6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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