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NUP4106DR2G

Onsemi

NUP4106DR2G by Onsemi

NUP4106DR2G by Onsemi is a single TRANS VOLTAGE SUPPRESSOR DIODE with 500W power dissipation and 5V breakdown voltage. It is used for transient suppression in applications requiring a max clamping voltage of 15V, such as protecting sensitive electronic components from voltage spikes.

Median Price

$2.046

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,707 parts In-Stock

1+ parts

$2.860

100+ parts

$1.750

1k+ parts

$1.370

10k+ parts

$1.220

3,707

$2.860

$1.750

$1.370

$1.220

DigiKey

USA . 3,688 parts In-Stock

1+ parts

$3.710

100+ parts

$1.701

1k+ parts

$1.499

10k+ parts

$1.284

3,688

$3.710

$1.701

$1.499

$1.284

Verical

USA . 37,500 parts In-Stock

1+ parts

-

100+ parts

-

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$1.232

37,500

-

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-

$1.232

Rochester

USA . 4,652 parts In-Stock

1+ parts

-

100+ parts

$1.230

1k+ parts

$1.100

10k+ parts

$1.030

4,652

-

$1.230

$1.100

$1.030

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,470 parts In-Stock

1+ parts

$1.292

100+ parts

-

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2,470

$1.292

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.439

100+ parts

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10

$1.439

-

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Chip Stock

USA . 16,000 parts In-Stock

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16,000

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Vyrian

USA . 4,860 parts In-Stock

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4,860

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Flip Electronics

USA . 3,768 parts In-Stock

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3,768

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Schukat

Germany . 1,320 parts In-Stock

1+ parts

-

100+ parts

$1.130

1k+ parts

$0.941

10k+ parts

-

1,320

-

$1.130

$0.941

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Bristol Electronics

USA . 485 parts In-Stock

1+ parts

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485

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Distributors (Availability)

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Corohmni

South Africa . 84 parts In-Stock

1+ parts

$1.130

100+ parts

-

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84

$1.130

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Ampacity Inc.

Singapore . 4,747 parts In-Stock

1+ parts

$1.160

100+ parts

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4,747

$1.160

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Corphita

USA . 2,221 parts In-Stock

1+ parts

$1.224

100+ parts

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2,221

$1.224

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.439

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2,000

$1.439

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Argo Parts USA

USA . 1,649 parts In-Stock

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$1.439

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1,649

$1.439

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Perfect Parts

USA . 35,896 parts In-Stock

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35,896

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RC Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$2.950

1k+ parts

$2.780

10k+ parts

$2.730

12,000

-

$2.950

$2.780

$2.730

Kepictronics

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 8,164 parts In-Stock

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$1.630

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8,164

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$1.630

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TANS Electronics

Latvia . 8,011 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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A-Z Elektronik GmbH

Germany . 5,693 parts In-Stock

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Kulean Microsystems

USA . 4,921 parts In-Stock

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4,921

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SupplyDigital Components

Austria . 4,129 parts In-Stock

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Assy Fe

Spain . 2,338 parts In-Stock

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UHIMA Technologies

Türkiye . 796 parts In-Stock

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Problanco Electronics

Mexico . 638 parts In-Stock

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638

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Overview

Enhance your electronic systems with the NUP4106DR2G by Onsemi, a top-quality transient suppression device designed to protect against voltage spikes and surges. Manufactured by industry leader Onsemi, this product offers unparalleled reliability and performance. Ideal for a wide range of applications, this single-configured device is perfect for securing sensitive components in your circuitry. With a maximum clamping voltage of 15V and a peak power dissipation of 500W, you can trust the NUP4106DR2G to safeguard your equipment from potential damage. Upgrade your protection today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ideal for a variety of applications.

Config: SINGLE

Single configuration simplifies the installation process and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration onto PCBs.

Maximum Non Repetitve Peak Reverse Power Dissipation: 500 W

High maximum non-repetitive peak reverse power dissipation rating ensures reliable protection against transient overvoltages.

Nominal Breakdown Voltage: 5 V

Low nominal breakdown voltage of 5V provides effective protection against voltage surges within the specified range.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and alignment on circuit boards.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the device to the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and allows for compact designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures the device can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C makes the device suitable for a wide range of temperature environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good electrical conductivity and solderability.

Terminal Position: DUAL

Dual terminal position allows for flexible installation options in the circuit.

Minimum Breakdown Voltage: 5 V

Low minimum breakdown voltage ensures protection against voltage spikes within the specified threshold.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures quick and efficient soldering process during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures reliable solder joints during the assembly process.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Use of trans voltage suppressor diode ensures effective suppression of voltage transients and spikes.

Technology: AVALANCHE

Avalanche technology provides robust and efficient transient voltage suppression performance.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and provides mechanical strength to the connections.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device protects against voltage spikes in one direction only.

Maximum Clamping Voltage: 15 V

Maximum clamping voltage of 15V ensures that the protected circuit is not exposed to damaging voltage levels.

Diode Element Material: SILICON

Use of silicon diode element material provides efficient voltage suppression capabilities and high reliability.

Technical Specifications

Transient Suppression Devices NUP4106DR2G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

5 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

15 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NUP4106DR2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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