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NUP4102XV6T1

Onsemi

NUP4102XV6T1 by Onsemi

NUP4102XV6T1 by Onsemi is a Zener diode with 15V breakdown voltage and 100W peak reverse power dissipation. It is a bidirectional transient suppression device in a small outline package, suitable for protecting electronic circuits from voltage spikes during operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,460 parts In-Stock

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Digiode

USA . 1,380 parts In-Stock

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1,380

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Problanco Electronics

Mexico . 3,337 parts In-Stock

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3,337

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Kulean Microsystems

USA . 2,037 parts In-Stock

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TANS Electronics

Latvia . 1,644 parts In-Stock

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Corphita

USA . 1,358 parts In-Stock

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SupplyDigital Components

Austria . 1,091 parts In-Stock

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UHIMA Technologies

Türkiye . 571 parts In-Stock

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Corohmni

South Africa . 298 parts In-Stock

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Overview

Experience the reliable protection offered by the NUP4102XV6T1 from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their transient suppression devices. Ideal for a wide range of applications, this product provides peace of mind with its exceptional value and benefits. Safeguard your electronics with the advantages of this advanced technology, offering customers the assurance they need in today's fast-paced world.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the device lightweight and durable, ensuring long-term reliability.

Config: COMPLEX

The complex configuration of this transient suppression device allows for efficient suppression of transient voltage spikes in various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 100 W

With a high maximum power dissipation capacity of 100 W, this device can effectively handle high transient power spikes, protecting downstream components.

Nominal Breakdown Voltage: 15 V

The nominal breakdown voltage of 15 V ensures reliable protection against voltage surges within the specified range.

Surface Mount: YES

Being surface mountable, this device is easy to install on circuit boards, saving space and ensuring a tidy assembly.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into various electronic devices and circuit layouts.

No. of Terminals: 6

Having 6 terminals provides multiple connection points, making it versatile for different circuit configurations.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good electrical conductivity and solderability, enhancing the device's overall performance.

Terminal Position: DUAL

Dual terminal positions allow for flexible installation orientations, making it easier to incorporate into different circuit designs.

Minimum Breakdown Voltage: 14 V

The minimum breakdown voltage of 14 V ensures that even lower voltage surges are effectively suppressed by the device.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures reliable soldering during assembly, contributing to the device's overall durability.

Maximum Breakdown Voltage: 16 V

The maximum breakdown voltage of 16 V provides an extra margin of protection against higher voltage transients, enhancing the device's effectiveness.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diodes ensures fast and efficient clamping of transient voltage spikes, safeguarding against potential damage to sensitive components.

Technology: ZENER

Utilizing Zener technology enables precise voltage regulation and reliable transient suppression, making this device suitable for a wide range of applications.

Terminal Form: FLAT

The flat terminal form simplifies the soldering process and provides a secure connection, contributing to the device's overall performance and reliability.

No. of Elements: 8

Having 8 elements enhances the device's transient suppression capabilities, ensuring effective protection against multiple transient voltage spikes.

Maximum Repetitive Peak Reverse Voltage: 12 V

The maximum repetitive peak reverse voltage rating of 12 V indicates the device's ability to handle repeated transient events, enhancing its longevity and reliability.

Polarity: BIDIRECTIONAL

The bidirectional polarity enables the device to suppress surges in both directions, providing comprehensive protection for sensitive components in the circuit.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures high efficiency and durability in transient suppression, making this device a reliable choice for voltage spike protection.

Technical Specifications

Transient Suppression Devices NUP4102XV6T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

16 V

Minimum Breakdown Voltage:

14 V

Nominal Breakdown Voltage:

15 V

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

100 W

No. of Elements:

8

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NUP4102XV6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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