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NUP4016P5T5G

Onsemi

NUP4016P5T5G by Onsemi

NUP4016P5T5G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a breakdown voltage of 6V, operates b/w -40 to 125 °C, and uses avalanche technology. Ideal for applications requiring protection against voltage transients in compact electronic systems.

Median Price

$2.450

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5,046 parts In-Stock

1+ parts

$2.450

100+ parts

$0.856

1k+ parts

$0.630

10k+ parts

-

5,046

$2.450

$0.856

$0.630

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Distributors (In-Stock)

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Digiode

USA . 381 parts In-Stock

1+ parts

$2.328

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381

$2.328

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Chip Stock

USA . 48,000 parts In-Stock

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48,000

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Vyrian

USA . 11,562 parts In-Stock

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Flip Electronics

USA . 5,500 parts In-Stock

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5,500

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Semtec, LLC

USA . 100 parts In-Stock

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100

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Prism Electronics

USA . 30 parts In-Stock

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30

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NPI Materials, Inc.

USA . 20 parts In-Stock

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20

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Distributors (Availability)

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Corphita

USA . 959 parts In-Stock

1+ parts

$2.205

100+ parts

-

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959

$2.205

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Corohmni

South Africa . 54 parts In-Stock

1+ parts

$2.450

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54

$2.450

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AZTECH Wire

Italy . 288 parts In-Stock

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$9.010

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288

$9.010

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Kepictronics

USA . 39,000 parts In-Stock

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Perfect Parts

USA . 35,437 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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Assy Fe

Spain . 28,954 parts In-Stock

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TANS Electronics

Latvia . 7,076 parts In-Stock

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7,076

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Problanco Electronics

Mexico . 6,566 parts In-Stock

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Authorized Procurement Solutions

USA . 5,210 parts In-Stock

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5,210

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GreenTree Electronics

Israel . 5,210 parts In-Stock

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5,210

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SupplyDigital Components

Austria . 4,769 parts In-Stock

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4,769

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Kulean Microsystems

USA . 3,693 parts In-Stock

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3,693

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A-Z Elektronik GmbH

Germany . 1,860 parts In-Stock

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1,860

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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25

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Overview

Enhance your electronic devices with the NUP4016P5T5G by Onsemi, a high-quality transient suppression device that offers superior protection against voltage spikes. Manufactured by Onsemi, a trusted name in the industry, this product features a common anode configuration with four elements for reliable performance. Ideal for a wide range of applications, this device is designed to provide customers with peace of mind knowing their electronics are safeguarded. Invest in the NUP4016P5T5G today and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Config: COMMON ANODE, 4 ELEMENTS

Allows for effective transient suppression by utilizing multiple elements for enhanced protection.

Surface Mount: YES

Enables easy and convenient installation on PCBs, saving time and effort during assembly.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring stable performance in various operating conditions.

Minimum Operating Temperature: -40 °C

Capable of operating in low temperature environments without compromising functionality.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance, promoting efficient electrical connections.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, offering effective protection against voltage spikes.

Technical Specifications

Transient Suppression Devices NUP4016P5T5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NUP4016P5T5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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