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NUP4104X6T1

Onsemi

NUP4104X6T1 by Onsemi

NUP4104X6T1 by Onsemi is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 150W and a min breakdown voltage of 6.1V. Ideal for applications requiring protection against voltage transients in compact electronic circuits.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

44,000

-

$0.079

$0.066

$0.059

DigiKey

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

44,000

-

-

-

$0.100

Verical

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

44,000

-

-

-

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,841 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

-

1,841

$0.056

-

-

-

Digiode

USA . 1,301 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

1,301

$0.062

-

-

-

DigiKey Marketplace

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.070

10k+ parts

-

44,000

-

-

$0.070

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 50 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.056

-

-

-

Corphita

USA . 1,348 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

1,348

$0.058

-

-

-

Component Stockers USA

USA . 79,761 parts In-Stock

1+ parts

$0.070

100+ parts

$0.060

1k+ parts

$0.060

10k+ parts

$0.060

79,761

$0.070

$0.060

$0.060

$0.060

Continental Prestige Electronics

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.054

10k+ parts

-

44,000

-

-

$0.054

-

Kulean Microsystems

USA . 7,731 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,731

-

-

-

-

TANS Electronics

Latvia . 5,477 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,477

-

-

-

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SupplyDigital Components

Austria . 3,739 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,739

-

-

-

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UHIMA Technologies

Türkiye . 920 parts In-Stock

1+ parts

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100+ parts

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920

-

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Problanco Electronics

Mexico . 563 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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563

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Overview

Enhance your electronic devices with the NUP4104X6T1 by Onsemi, a top-tier manufacturer known for their superior quality products. This Transient Suppression Device is designed with 4 elements in a common anode configuration, offering maximum protection against voltage spikes. Ideal for various applications, this product boasts a compact design with surface mount capabilities, making it easy to integrate into your projects. Ensure reliability and performance with the NUP4104X6T1, providing peace of mind and value to customers looking for the best in transient suppression technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection against environmental factors and ensures durability of the device.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration allows for easy connection within circuit designs, and 4 elements ensure efficient transient suppression.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High power dissipation capacity ensures the device can handle sudden surges and spikes effectively.

Surface Mount: YES

Surface mount capability makes for easy and efficient installation on PCBs.

Min Breakdown Voltage: 6.1 V

With a minimum breakdown voltage of 6.1 V, this device provides effective protection against voltage spikes above this level.

Maximum Breakdown Voltage: 7.2 V

The maximum breakdown voltage of 7.2 V ensures that the device can handle higher voltage spikes without damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for transient voltage suppression, ensuring effective protection of the circuit.

Technology: AVALANCHE

The avalanche technology used in this device allows for quick response to transient voltage spikes, effectively suppressing them.

Maximum Repetitive Peak Reverse Voltage: 3 V

The maximum repetitive peak reverse voltage of 3 V ensures reliable protection against repeated voltage spikes within this range.

Technical Specifications

Transient Suppression Devices NUP4104X6T1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.1 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

NUP4104X6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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