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NUP4012PXV6T1G

Onsemi

NUP4012PXV6T1G by Onsemi

NUP4012PXV6T1G by Onsemi is a Transient Suppression Device with 4 common anode elements. It has a breakdown voltage of 5.5V, max reverse current of 1uA, and operates b/w -40 to 125 °C. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.411

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

$0.396

1k+ parts

$0.329

10k+ parts

$0.293

24,000

-

$0.396

$0.329

$0.293

DigiKey

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.500

10k+ parts

-

24,000

-

-

$0.500

-

Verical

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.411

10k+ parts

$0.367

24,000

-

-

$0.411

$0.367

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,084 parts In-Stock

1+ parts

$0.309

100+ parts

-

1k+ parts

-

10k+ parts

-

2,084

$0.309

-

-

-

Chip Stock

USA . 21,000 parts In-Stock

1+ parts

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21,000

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Vyrian

USA . 6,302 parts In-Stock

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6,302

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,181 parts In-Stock

1+ parts

$0.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,181

$0.292

-

-

-

Corohmni

South Africa . 419 parts In-Stock

1+ parts

$0.307

100+ parts

-

1k+ parts

-

10k+ parts

-

419

$0.307

-

-

-

Component Stockers USA

USA . 20,374 parts In-Stock

1+ parts

$0.340

100+ parts

$0.320

1k+ parts

$0.290

10k+ parts

$0.290

20,374

$0.340

$0.320

$0.290

$0.290

AZTECH Wire

Italy . 1,032 parts In-Stock

1+ parts

$22.170

100+ parts

-

1k+ parts

-

10k+ parts

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1,032

$22.170

-

-

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Kepictronics

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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39,000

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-

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Continental Prestige Electronics

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.278

10k+ parts

-

24,000

-

-

$0.278

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Kulean Microsystems

USA . 7,993 parts In-Stock

1+ parts

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100+ parts

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7,993

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Problanco Electronics

Mexico . 5,495 parts In-Stock

1+ parts

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100+ parts

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5,495

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TANS Electronics

Latvia . 2,565 parts In-Stock

1+ parts

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100+ parts

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2,565

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SupplyDigital Components

Austria . 2,165 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,165

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UHIMA Technologies

Türkiye . 518 parts In-Stock

1+ parts

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100+ parts

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518

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Overview

Protect your electronics with the NUP4012PXV6T1G by Onsemi, a high-quality transient suppression device designed to safeguard against voltage spikes and surges. Manufactured by Onsemi, a trusted leader in semiconductor technology, this product offers peace of mind and reliability for a wide range of applications. With its common anode configuration and compact package style, this device is easy to install and provides superior protection. Ensure the longevity of your valuable equipment with the NUP4012PXV6T1G, delivering unmatched performance and value for customers seeking top-notch quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the device, ensuring long-term reliability.

Nominal Breakdown Voltage: 5.5 V

The high breakdown voltage ensures that the device can handle surges and transient events effectively, protecting the connected equipment.

Maximum Reverse Current: 1 uA

The low reverse current allows for efficient suppression of transient voltages while minimizing power consumption.

Maximum Clamping Voltage: 9.5 V

The low clamping voltage ensures that the protected equipment is not exposed to excessive voltages, maintaining its integrity during transient events.

Technology: AVALANCHE

The avalanche technology used in this product allows for quick response to transient events, providing rapid protection for connected devices.

Technical Specifications

Transient Suppression Devices NUP4012PXV6T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE, LOW CAPACITANCE

Minimum Breakdown Voltage:

5.2 V

Nominal Breakdown Voltage:

5.5 V

Maximum Clamping Voltage:

9.5 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F6

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

4 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

4 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

NUP4012PXV6T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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