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1SMA64AT3G

Onsemi

1SMA64AT3G by Onsemi

1SMA64AT3G by Onsemi is a Zener diode with a breakdown voltage of 74.85V and max clamping voltage of 103V. It is a unidirectional transient suppression device in a small outline package, ideal for protecting electronic circuits from voltage spikes in surface mount applications.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

5,000

-

$0.132

$0.110

$0.098

DigiKey

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.170

5,000

-

-

-

$0.170

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.122

5,000

-

-

-

$0.122

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 246 parts In-Stock

1+ parts

$0.103

100+ parts

-

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-

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246

$0.103

-

-

-

Chip Stock

USA . 34,000 parts In-Stock

1+ parts

-

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34,000

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Vyrian

USA . 12,474 parts In-Stock

1+ parts

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12,474

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.070

100+ parts

$0.064

1k+ parts

$0.057

10k+ parts

-

350

$0.070

$0.064

$0.057

-

Corohmni

South Africa . 100 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

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100

$0.073

-

-

-

Corphita

USA . 273 parts In-Stock

1+ parts

$0.097

100+ parts

-

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273

$0.097

-

-

-

AZTECH Wire

Italy . 237 parts In-Stock

1+ parts

$15.240

100+ parts

-

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237

$15.240

-

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Native Components

USA . 686 parts In-Stock

1+ parts

$34.970

100+ parts

-

1k+ parts

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10k+ parts

$33.571

686

$34.970

-

-

$33.571

Northwest PG Solutions

USA . 445 parts In-Stock

1+ parts

$38.467

100+ parts

-

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445

$38.467

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-

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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90,000

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Kepictronics

USA . 52,800 parts In-Stock

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52,800

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SupplyDigital Components

Austria . 6,982 parts In-Stock

1+ parts

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6,982

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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Continental Prestige Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.093

10k+ parts

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5,000

-

-

$0.093

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Problanco Electronics

Mexico . 4,574 parts In-Stock

1+ parts

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4,574

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TANS Electronics

Latvia . 3,803 parts In-Stock

1+ parts

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3,803

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Kulean Microsystems

USA . 3,060 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,060

-

-

-

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UHIMA Technologies

Türkiye . 897 parts In-Stock

1+ parts

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100+ parts

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897

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Overview

Enhance your electronic circuit protection with the reliable 1SMA64AT3G transient suppression device from Onsemi. Crafted with precision and expertise, this single configuration diode offers unparalleled quality and performance. Ideal for various applications, this Zener technology diode provides maximum protection against voltage spikes, ensuring the longevity of your devices. Trust Onsemi to deliver exceptional value and peace of mind with the 1SMA64AT3G, safeguarding your investments with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring long-lasting performance.

Config: SINGLE

Simplified design with a single configuration makes it easy to integrate into various systems.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Can handle high power dissipation, providing reliable protection against surges.

Nominal Breakdown Voltage: 74.85 V

Provides precise voltage breakdown for efficient suppression of transient voltage spikes.

Package Shape: RECTANGULAR

Compact shape for easy placement and integration into circuit designs.

No. of Terminals: 2

Simple two-terminal design for easy connectivity.

Terminal Finish: TIN

Provides a reliable contact surface for electrical connections.

Maximum Power Dissipation: 0.5 W

Efficient power dissipation for effective suppression of transient spikes.

Minimum Breakdown Voltage: 71.1 V

Provides a safe threshold for voltage breakdown, protecting connected components.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes.

Maximum Breakdown Voltage: 78.6 V

Offers a maximum threshold for voltage breakdown, ensuring protection under varying conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, making it an ideal choice for protection circuits.

Technology: ZENER

Zener technology provides stable and reliable voltage regulation for effective suppression.

Terminal Form: C BEND

Terminal form allows for secure and stable connections in circuitry.

Maximum Repetitive Peak Reverse Voltage: 64 V

Capable of handling repetitive voltage spikes for continuous protection.

Polarity: UNIDIRECTIONAL

Designed for uni-directional voltage suppression, ensuring protection in specific applications.

Maximum Clamping Voltage: 103 V

Provides a maximum clamping voltage to suppress transient spikes effectively without damaging connected devices.

Diode Element Material: SILICON

Silicon material offers high durability and performance for effective voltage suppression.

Technical Specifications

Transient Suppression Devices 1SMA64AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

78.6 V

Minimum Breakdown Voltage:

71.1 V

Nominal Breakdown Voltage:

74.85 V

Maximum Clamping Voltage:

103 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

64 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1SMA64AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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