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1SMA5.0AT3G

Onsemi

1SMA5.0AT3G by Onsemi

1SMA5.0AT3G by Onsemi is a Zener diode with 5V breakdown voltage, ideal for transient suppression applications. It has a max power dissipation of 400W and clamping voltage of 9.2V, suitable for protecting sensitive electronics from voltage spikes in various circuits. This single-configured device comes in a small outline package with dual terminals for surface mount assembly at temperatures ranging from -65 to 150°C.

Median Price

$0.746

Lifecycle Status

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27

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1k+

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Nova Conductors

Japan . 200 parts In-Stock

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IBS Electronics

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Bas Electronics GmbH & Co. KG

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Pegasus Components GmbH

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Semtec, LLC

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Quantum Digital Technology

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Netsource Technology, Inc.

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QIE Inc.

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Component Sense

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Rebound Electronics

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Digiode

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Classic Components Corporation

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Inventory MP

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Vyrian

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EPE Components Inc.

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ACDS - Activité Composants Distribution Service

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NPI Materials, Inc.

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Prism Electronics

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Sensible Micro Corp

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Ampacity Inc.

Singapore . 1,538 parts In-Stock

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$0.010

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Corohmni

South Africa . 360 parts In-Stock

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Advanced Electronics

New Zealand . 16 parts In-Stock

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Continental Prestige Electronics

USA . 3,610 parts In-Stock

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Argo Parts USA

USA . 2,616 parts In-Stock

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AZTECH Wire

Italy . 896 parts In-Stock

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Component Stockers USA

USA . 623 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 7,330 parts In-Stock

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S.R.D Solutions

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Glotronic Ltd.

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UHIMA Technologies

Türkiye . 820 parts In-Stock

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Corphita

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iodParts Technologies Inc.

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Overview

Looking for reliable transient suppression devices? Look no further than the 1SMA5.0AT3G by Onsemi! Manufactured with high-quality materials, this product offers superior protection against voltage spikes in a compact package. Ideal for a wide range of applications, this diode provides peace of mind and ensures the safety of your electronic devices. Trust Onsemi for top-notch quality and performance. Choose the 1SMA5.0AT3G for unmatched value and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the device, ensuring a long lifespan and reliable performance.

Config: SINGLE

The single configuration simplifies installation and setup, making it more user-friendly.

Surface Mount: YES

The surface mount capability allows for easy integration onto circuit boards, saving space and reducing installation time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

With a high peak power dissipation capacity, this device can effectively handle transient voltage spikes and protect against damage.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and mounting within electronic systems.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the risk of wiring errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact device designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range allows for use in a wide variety of temperature conditions.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

The dual terminal position allows for flexibility in installation and connection options.

Maximum Power Dissipation: 0.5 W

The low power dissipation ensures energy efficiency and helps prevent overheating.

Minimum Breakdown Voltage: 6.4 V

The high minimum breakdown voltage provides effective protection against voltage surges.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature minimizes the risk of damaging the device during soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable soldering and bonding of the device onto PCBs.

Maximum Breakdown Voltage: 7 V

The high maximum breakdown voltage offers additional protection against higher voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type is specifically designed for transient voltage suppression, enhancing the device's protective capabilities.

Technology: ZENER

The Zener technology ensures precise voltage regulation and effective transient suppression.

Terminal Form: C BEND

The C bend terminal form simplifies the soldering process and enhances the device's mechanical stability.

Maximum Repetitive Peak Reverse Voltage: 5 V

The low maximum repetitive peak reverse voltage allows for effective suppression of low-level voltage spikes.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are suppressed in a single direction, protecting the circuit from damage.

Maximum Clamping Voltage: 9.2 V

The maximum clamping voltage ensures that any voltage spikes above this level are effectively suppressed, safeguarding the connected components.

Diode Element Material: SILICON

The silicon diode element material offers high performance and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices 1SMA5.0AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

7 V

Minimum Breakdown Voltage:

6.4 V

Maximum Clamping Voltage:

9.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SMA5.0AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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