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1SMA12CAT3G

Onsemi

1SMA12CAT3G by Onsemi

1SMA12CAT3G by Onsemi is a Zener diode with 12V max repetitive peak reverse voltage and bidirectional polarity. It has a max clamping voltage of 19.9V, making it ideal for transient suppression in electronic circuits. With a package style of small outline and surface mount capability, it is suitable for applications requiring protection against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 46,000 parts In-Stock

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Digiode

USA . 1,411 parts In-Stock

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Vyrian

USA . 563 parts In-Stock

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563

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Prism Electronics

USA . 348 parts In-Stock

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348

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 72 parts In-Stock

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Native Components

USA . 446 parts In-Stock

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$0.229

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$0.220

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Northwest PG Solutions

USA . 1,850 parts In-Stock

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$2.759

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Component Stockers USA

USA . 481 parts In-Stock

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$99.990

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Kepictronics

USA . 52,800 parts In-Stock

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Metaverse IC Inc.

Canada . 46,800 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 5,673 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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TANS Electronics

Latvia . 2,349 parts In-Stock

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Corphita

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Kulean Microsystems

USA . 1,461 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 517 parts In-Stock

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UHIMA Technologies

Türkiye . 451 parts In-Stock

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Corohmni

South Africa . 258 parts In-Stock

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Overview

Enhance your electronic system's reliability with the 1SMA12CAT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality in their Transient Suppression Devices category. This device offers superior protection against voltage spikes and surges, ensuring your valuable equipment stays safe. With its compact design and high performance, the 1SMA12CAT3G is perfect for a wide range of applications. Trust Onsemi to provide you with the best solution for your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring a long lifespan.

Config: SINGLE

Simplified design for easy integration and installation in various applications.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Can handle high power surges, protecting sensitive components in the circuit.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment on PCBs, optimizing space usage.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance.

Minimum Operating Temperature: -65 °C

Suitable for use in extreme temperature conditions, ensuring reliability in various applications.

Terminal Finish: TIN

Provides a reliable and conductive interface for electrical connections.

Technology: ZENER

Utilizes advanced Zener technology for precise voltage regulation and transient suppression.

Polarity: BIDIRECTIONAL

Offers protection in both directions, ensuring comprehensive safeguarding against voltage spikes.

Technical Specifications

Transient Suppression Devices 1SMA12CAT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

14.7 V

Minimum Breakdown Voltage:

13.3 V

Maximum Clamping Voltage:

19.9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SMA12CAT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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