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1SMA14AT3G

Onsemi

1SMA14AT3G by Onsemi

1SMA14AT3G by Onsemi is a Zener diode with 16.4V breakdown voltage, 400W peak power dissipation, and 23.2V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes during operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ashlea Components Ltd

UK . 2,635 parts In-Stock

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Digiode

USA . 1,831 parts In-Stock

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Vyrian

USA . 90 parts In-Stock

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90

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Distributors (Availability)

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Native Components

USA . 1,420 parts In-Stock

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$14.833

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$14.833

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Northwest PG Solutions

USA . 1,477 parts In-Stock

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$16.316

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$14.684

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$16.316

$14.684

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Kepictronics

USA . 41,000 parts In-Stock

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41,000

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Kulean Microsystems

USA . 8,189 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 6,226 parts In-Stock

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TANS Electronics

Latvia . 2,972 parts In-Stock

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SupplyDigital Components

Austria . 1,947 parts In-Stock

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Perfect Parts

USA . 1,808 parts In-Stock

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Corphita

USA . 1,708 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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UHIMA Technologies

Türkiye . 58 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the 1SMA14AT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality transient suppression devices that provide reliable safeguarding against voltage spikes and surges. Ideal for a wide range of applications, this product ensures optimal performance and longevity for your equipment. Trust in Onsemi's expertise and innovation to keep your devices safe and secure. Elevate your electronics with the superior quality and peace of mind that the 1SMA14AT3G offers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material is durable and reliable, providing protection for the internal components of the device.

Config: SINGLE

Single configuration simplifies installation and maintenance, making the device easy to use.

Surface Mount: YES

Surface mount capability allows for easy integration into PCB designs, saving space and reducing assembly time.

Nominal Breakdown Voltage: 16.4 V

Nominal breakdown voltage of 16.4 V ensures effective protection against voltage spikes and surges.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C ensures reliable performance even in challenging environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature of -65 °C ensures the device can function in a wide range of temperature conditions.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity, ensuring secure connections.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed for transient suppression applications, offering optimal protection.

Technology: ZENER

Zener technology provides precise voltage regulation and excellent transient suppression performance.

Maximum Clamping Voltage: 23.2 V

Maximum clamping voltage of 23.2 V ensures that voltage spikes are limited to a safe level, protecting sensitive electronics.

Technical Specifications

Transient Suppression Devices 1SMA14AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

Maximum Breakdown Voltage:

17.2 V

Minimum Breakdown Voltage:

15.6 V

Nominal Breakdown Voltage:

16.4 V

Maximum Clamping Voltage:

23.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Maximum Repetitive Peak Reverse Voltage:

14 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SMA14AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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