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1SMA10CAT3

Onsemi

1SMA10CAT3 by Onsemi

1SMA10CAT3 by Onsemi is a Zener diode with bidirectional polarity and 10V max repetitive peak reverse voltage. It has a clamping voltage of 17V and is used for transient suppression in electronic circuits. With a package style of small outline, it can dissipate up to 0.5W power at an operating temperature range of -65 °C to 150°C.

Median Price

$0.770

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 4,314 parts In-Stock

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$0.770

100+ parts

$0.580

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$0.500

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4,314

$0.770

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Chip Stock

USA . 28,000 parts In-Stock

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Lantek

USA . 5,000 parts In-Stock

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North Shore Components

USA . 4,451 parts In-Stock

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Velocity Electronics

USA . 4,415 parts In-Stock

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Inventory MP

USA . 785 parts In-Stock

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785

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Bristol Electronics

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Digiode

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Vyrian

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Extreme Components

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Distributors (Availability)

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Corohmni

South Africa . 262 parts In-Stock

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$0.770

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Component Stockers USA

USA . 312 parts In-Stock

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$99.990

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CPlus Electronics

USA . 10,000 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 7,350 parts In-Stock

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Kulean Microsystems

USA . 5,698 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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EMSNET (Excess)

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Problanco Electronics

Mexico . 3,892 parts In-Stock

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Perfect Parts

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Corphita

USA . 2,374 parts In-Stock

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SupplyDigital Components

Austria . 642 parts In-Stock

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UHIMA Technologies

Türkiye . 524 parts In-Stock

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Native Components

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Northwest PG Solutions

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Overview

Unleash the power of reliable transient suppression with the 1SMA10CAT3 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that are designed to protect your electronics from voltage spikes and surges. Ideal for a wide range of applications, this TRANS VOLTAGE SUPPRESSOR DIODE offers peace of mind and protection for your valuable devices. Trust Onsemi for superior performance and unmatched quality in every product they create.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and reliability for the transient suppression device.

Config: SINGLE

Single configuration simplifies installation and maintenance of the device.

Surface Mount: YES

Allows for easy surface mounting on a PCB.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Can handle high power surges without getting damaged, providing effective transient suppression.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the circuit board.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance.

Minimum Operating Temperature: -65 °C

Can also function in extremely low temperature conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish ensures good electrical conductivity and solderability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes trans voltage suppression diode technology for effective transient voltage protection.

Technical Specifications

Transient Suppression Devices 1SMA10CAT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

12.27 V

Minimum Breakdown Voltage:

11.1 V

Maximum Clamping Voltage:

17 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SMA10CAT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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