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1SMA14AT3

Onsemi

1SMA14AT3 by Onsemi

1SMA14AT3 by Onsemi is a Zener technology Trans Voltage Suppressor Diode with a max breakdown voltage of 17.2V and clamping voltage of 23.2V. It is a unidirectional diode ideal for transient suppression applications, offering high power dissipation up to 400W in a small outline package suitable for surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,924 parts In-Stock

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Digiode

USA . 462 parts In-Stock

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462

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Native Components

USA . 990 parts In-Stock

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$0.863

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990

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Northwest PG Solutions

USA . 2,324 parts In-Stock

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$0.950

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Kulean Microsystems

USA . 8,336 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 4,476 parts In-Stock

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SupplyDigital Components

Austria . 3,684 parts In-Stock

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Problanco Electronics

Mexico . 2,788 parts In-Stock

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Corphita

USA . 1,911 parts In-Stock

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UHIMA Technologies

Türkiye . 917 parts In-Stock

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Corohmni

South Africa . 110 parts In-Stock

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Overview

Experience superior protection with the 1SMA14AT3 by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi ensures top-notch quality and reliability. This Zener diode-based technology offers unmatched performance in safeguarding your electronics against voltage spikes. Ideal for a wide range of applications, this product is designed to handle up to 400W of power dissipation, providing peace of mind for your valuable equipment. Trust Onsemi for premium protection and unparalleled value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device.

Config: SINGLE

Simplified configuration for easy installation and maintenance.

Surface Mount: YES

Allows for convenient and space-saving mounting on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

High power dissipation capability ensures reliable protection against transient voltage spikes.

Package Shape: RECTANGULAR

Efficient use of space in design and installation.

Terminal Finish: TIN LEAD

Ensures good conductivity and helps prevent corrosion.

Maximum Breakdown Voltage: 17.2 V

Provides effective suppression of overvoltage conditions.

Technology: ZENER

Zener technology offers precise voltage regulation and protection.

Maximum Clamping Voltage: 23.2 V

Limits the voltage level during transient events to protect sensitive components.

Diode Element Material: SILICON

Silicon diode material provides reliable performance and longevity.

Technical Specifications

Transient Suppression Devices 1SMA14AT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

17.2 V

Minimum Breakdown Voltage:

15.6 V

Maximum Clamping Voltage:

23.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

14 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

1SMA14AT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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