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1SMA13AT3

Onsemi

1SMA13AT3 by Onsemi

1SMA13AT3 by Onsemi is a Zener diode with a breakdown voltage of 14.4V, max clamping voltage of 21.5V, and peak power dissipation of 400W. It is used in transient suppression applications for protecting electronic circuits from voltage spikes.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 57,000 parts In-Stock

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Digiode

USA . 2,438 parts In-Stock

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Vyrian

USA . 1,858 parts In-Stock

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Native Components

USA . 104 parts In-Stock

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$0.088

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$0.084

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Northwest PG Solutions

USA . 641 parts In-Stock

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$0.097

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$0.085

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Component Stockers USA

USA . 444 parts In-Stock

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$99.990

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Perfect Parts

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 11,838 parts In-Stock

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SupplyDigital Components

Austria . 4,888 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Problanco Electronics

Mexico . 2,337 parts In-Stock

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TANS Electronics

Latvia . 1,648 parts In-Stock

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Kulean Microsystems

USA . 1,306 parts In-Stock

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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Corohmni

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Corphita

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Overview

Enhance your electronic systems with the 1SMA13AT3 transient suppression device by Onsemi. Designed with high-quality materials and advanced technology, this single-configured diode offers reliable protection against voltage spikes, ensuring the longevity of your devices. Ideal for a wide range of applications, from power supplies to telecommunications equipment, this small outline package provides easy installation and efficient performance. Trust Onsemi's expertise in semiconductor manufacturing and invest in the durability and peace of mind that the 1SMA13AT3 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring long-term reliability.

Config: SINGLE

Simplified design with a single configuration for ease of use.

Surface Mount: YES

Can be easily mounted on PCBs, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Ability to handle high peak power dissipation, ensuring protection against surges.

Package Shape: RECTANGULAR

Efficient use of space on the PCB.

No. of Terminals: 2

Simple 2-terminal connection for easy integration.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained applications.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability.

Terminal Position: DUAL

Dual terminal position for secure connections.

Maximum Power Dissipation: 0.5 W

Efficient power dissipation to protect against overloads.

Minimum Breakdown Voltage: 14.4 V

Low breakdown voltage to protect sensitive components.

Peak Reflow Temperature °C: 235

High peak reflow temperature for robust soldering capability.

Maximum Breakdown Voltage: 15.9 V

High breakdown voltage for effective transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression to protect circuits.

Technology: ZENER

Zener technology for reliable voltage regulation and protection.

Terminal Form: C BEND

C bend terminal form for secure connection during assembly.

Maximum Repetitive Peak Reverse Voltage: 13 V

Capable of handling repetitive reverse voltage for prolonged protection.

Polarity: UNIDIRECTIONAL

Unidirectional polarity for specific transient suppression applications.

Maximum Clamping Voltage: 21.5 V

Efficient clamping voltage to protect against overvoltage events.

Diode Element Material: SILICON

Silicon diode material for reliable and consistent performance.

Technical Specifications

Transient Suppression Devices 1SMA13AT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

15.9 V

Minimum Breakdown Voltage:

14.4 V

Maximum Clamping Voltage:

21.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

13 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

1SMA13AT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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