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1SMA60CAT3

Onsemi

1SMA60CAT3 by Onsemi

1SMA60CAT3 by Onsemi is a Zener technology Trans Voltage Suppressor Diode with bidirectional polarity and a max breakdown voltage of 73.72V. It has a max clamping voltage of 96.8V and can handle non-repetitive peak reverse power dissipation up to 400W. This device is commonly used in transient suppression applications for protection against voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 60,000 parts In-Stock

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60,000

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VNN

France . 3,396 parts In-Stock

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3,396

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Vyrian

USA . 1,644 parts In-Stock

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1,644

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Digiode

USA . 913 parts In-Stock

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913

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Nova Conductors

Japan . 52 parts In-Stock

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Ampacity Inc.

Singapore . 1,201 parts In-Stock

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$0.010

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$0.010

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AZTECH Wire

Italy . 590 parts In-Stock

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$10.910

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590

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Authorized Procurement Solutions

USA . 75,000 parts In-Stock

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Kulean Microsystems

USA . 4,920 parts In-Stock

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TANS Electronics

Latvia . 3,793 parts In-Stock

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Continental Prestige Electronics

USA . 2,390 parts In-Stock

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Bastille Electronics

Australia . 1,736 parts In-Stock

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Problanco Electronics

Mexico . 1,691 parts In-Stock

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Corphita

USA . 1,631 parts In-Stock

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SupplyDigital Components

Austria . 1,603 parts In-Stock

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Argo Parts USA

USA . 863 parts In-Stock

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South Africa . 482 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Overview

Enhance your electronic devices with the reliable 1SMA60CAT3 transient suppression device from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in all their products. This Zener diode type device offers bidirectional polarity and a maximum clamping voltage of 96.8V, making it ideal for protecting your circuits against voltage spikes. Whether you're looking to safeguard your sensitive electronics or improve the overall reliability of your systems, the 1SMA60CAT3 is the perfect solution. Upgrade your devices today and experience the peace of mind that comes with using a trusted and efficient product like the 1SMA60CAT3 by Onsemi.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and resistance to environmental conditions.

Config:

SINGLE - Simplifies installation and maintenance.

Surface Mount:

YES - Allows for easy and efficient mounting on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W - Ensures protection against high voltage spikes.

Package Shape:

RECTANGULAR - Facilitates easy integration into existing circuit designs.

No. of Terminals:

2 - Simple and straightforward wiring configuration.

Package Style (Meter):

SMALL OUTLINE - Saves space and allows for high component density on PCB.

Maximum Operating Temperature:

150 °C - Suitable for a wide range of operating conditions.

Minimum Operating Temperature:

65 °C - Ensures reliable performance even in extreme cold temperatures.

Terminal Finish:

TIN LEAD - Provides excellent solderability and electrical conductivity.

Terminal Position:

DUAL - Offers flexibility in circuit design and installation.

Maximum Power Dissipation:

0.5 W - Efficiently handles power surges and transients.

Minimum Breakdown Voltage:

66.7 V - Provides reliable voltage protection.

Peak Reflow Temperature °C:

235 - Enables easy and secure soldering during assembly.

Maximum Breakdown Voltage:

73.72 V - Ensures effective voltage clamping and protection.

Diode Type:

TRANS VOLTAGE SUPPRESSOR DIODE - Specifically designed for transient suppression applications.

Technology:

ZENER - Offers stable and reliable voltage regulation.

Terminal Form:

C BEND - Facilitates secure and reliable electrical connections.

Maximum Repetitive Peak Reverse Voltage:

60 V - Protects against repeated voltage spikes.

Polarity:

BIDIRECTIONAL - Guards against transients in both directions.

Maximum Clamping Voltage:

96.8 V - Provides effective voltage suppression capabilities.

Diode Element Material:

SILICON - Delivers high-performance transient suppression.

Technical Specifications

Transient Suppression Devices 1SMA60CAT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

73.72 V

Minimum Breakdown Voltage:

66.7 V

Maximum Clamping Voltage:

96.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

1SMA60CAT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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