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1SMA11CAT3G

Onsemi

1SMA11CAT3G by Onsemi

1SMA11CAT3G by Onsemi is a Zener diode with bidirectional polarity and a breakdown voltage range of 12.2V to 13.48V. It has a max clamping voltage of 18.2V, making it ideal for transient suppression in electronic circuits. With a peak power dissipation of 400W, this device can operate b/w -65 °C to 150°C efficiently in various applications.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 31,000 parts In-Stock

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Vyrian

USA . 6,540 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 1,190 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 52,800 parts In-Stock

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CPlus Electronics

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 6,559 parts In-Stock

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Problanco Electronics

Mexico . 6,020 parts In-Stock

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TANS Electronics

Latvia . 5,984 parts In-Stock

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SupplyDigital Components

Austria . 4,855 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

USA . 1,359 parts In-Stock

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UHIMA Technologies

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Corohmni

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Overview

Unleash the power of protection with the 1SMA11CAT3G by Onsemi. Designed to safeguard your electronics from voltage spikes, this transient suppression device boasts top-notch quality and reliability from a trusted manufacturer. Ideal for a wide range of applications, this product offers peace of mind by providing superior protection against electrical surges. With its high performance and durability, the 1SMA11CAT3G is your go-to solution for ensuring the longevity and efficiency of your valuable electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the device, making it suitable for a variety of applications.

Surface Mount: YES

Ease of installation and space-saving design make it convenient for use in compact electronic circuits.

Nominal Breakdown Voltage: 12.84 V

Provides reliable protection against transient voltage spikes at the specified voltage level.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance even in demanding environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes advanced diode technology specifically designed for transient voltage suppression, offering superior protection.

Technical Specifications

Transient Suppression Devices 1SMA11CAT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

13.48 V

Minimum Breakdown Voltage:

12.2 V

Nominal Breakdown Voltage:

12.84 V

Maximum Clamping Voltage:

18.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

11 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1SMA11CAT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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