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1SMA13AT3G

Onsemi

1SMA13AT3G by Onsemi

1SMA13AT3G by Onsemi is a Zener diode with 15.15V breakdown voltage, 400W peak power dissipation, and 21.5V clamping voltage. Ideal for transient suppression in electronics, it operates b/w -65 °C to 150°C and has a small outline package with dual terminals for surface mount applications.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 336,151 parts In-Stock

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-

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$0.185

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$0.153

10k+ parts

$0.137

336,151

-

$0.185

$0.153

$0.137

DigiKey

USA . 336,151 parts In-Stock

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$0.230

336,151

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$0.230

Verical

USA . 251,687 parts In-Stock

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$0.171

251,687

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$0.171

Distributors (In-Stock)

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DF Sales Co.

USA . 3,945 parts In-Stock

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$0.100

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3,945

$0.100

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DF Sales Co.

USA . 3,945 parts In-Stock

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$0.100

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$0.100

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Vyrian

USA . 1,016 parts In-Stock

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$0.127

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$0.127

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Digiode

USA . 2,055 parts In-Stock

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$0.144

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$0.144

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DigiKey Marketplace

USA . 336,151 parts In-Stock

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$0.160

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Chip Stock

USA . 34,000 parts In-Stock

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Semi Source

USA . 4,459 parts In-Stock

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4,459

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ACDS - Activité Composants Distribution Service

France . 3,705 parts In-Stock

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Bristol Electronics

USA . 3,314 parts In-Stock

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Connector Distribution Corp

USA . 2,833 parts In-Stock

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Right Parts Inc.

USA . 2,833 parts In-Stock

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2,833

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Ashlea Components Ltd

UK . 2,572 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,554 parts In-Stock

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Prism Electronics

USA . 5 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 140 parts In-Stock

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$0.100

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140

$0.100

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Native Components

USA . 1,610 parts In-Stock

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$0.119

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$0.114

1,610

$0.119

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$0.114

Corphita

USA . 1,985 parts In-Stock

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$0.137

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Component Stockers USA

USA . 889,264 parts In-Stock

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$0.160

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$0.150

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$0.130

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$0.130

889,264

$0.160

$0.150

$0.130

$0.130

Northwest PG Solutions

USA . 1,834 parts In-Stock

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$0.175

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$0.155

1,834

$0.175

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Continental Prestige Electronics

USA . 336,151 parts In-Stock

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$0.127

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Assy Fe

Spain . 175,000 parts In-Stock

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Kepictronics

USA . 35,000 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 5,583 parts In-Stock

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Kulean Microsystems

USA . 4,807 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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SupplyDigital Components

Austria . 2,704 parts In-Stock

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UHIMA Technologies

Türkiye . 933 parts In-Stock

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Problanco Electronics

Mexico . 417 parts In-Stock

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Overview

Enhance your electronic devices with the 1SMA13AT3G by Onsemi, a top-of-the-line transient suppression device that guarantees superior quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers unmatched protection against voltage spikes and surges, ensuring the longevity of your equipment. Ideal for a wide range of applications, this single-configured, surface-mount device is designed to provide maximum power dissipation and efficient temperature control. Invest in the 1SMA13AT3G today and experience the peace of mind that comes with knowing your electronics are safeguarded at all times.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body enhances durability and ensures long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

With a high maximum power dissipation, this transient suppression device can handle high power surges effectively without getting damaged.

Nominal Breakdown Voltage: 15.15 V

The nominal breakdown voltage of 15.15 V indicates the voltage at which the device starts conducting, providing effective protection against overvoltage.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures that the device can withstand high temperatures without malfunctioning.

Maximum Clamping Voltage: 21.5 V

The maximum clamping voltage of 21.5 V indicates the peak voltage that the device will limit during a transient event, providing protection to downstream components.

Technical Specifications

Transient Suppression Devices 1SMA13AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

15.9 V

Minimum Breakdown Voltage:

14.4 V

Nominal Breakdown Voltage:

15.15 V

Maximum Clamping Voltage:

21.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

13 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

1SMA13AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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