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ESD7361XV2T1G

Onsemi

ESD7361XV2T1G by Onsemi

ESD7361XV2T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 16V max repetitive peak reverse voltage and 34V max clamping voltage. It operates b/w -55 to 125 °C, complies with IEC-61000-4-2, 4-4, 4-5 standards, and is ideal for transient suppression applications in electronics due to its avalanche technology.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 14 parts In-Stock

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$0.087

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14

$0.087

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DigiKey

USA . 173,620 parts In-Stock

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$0.410

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$0.410

Farnell

UK . 4,007 parts In-Stock

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$0.084

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$0.084

Flip Electronics (Authorized)

USA . 2,620 parts In-Stock

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2,620

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Digiode

USA . 1,531 parts In-Stock

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$0.083

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$0.083

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South Electronics

USA . 286,500 parts In-Stock

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286,500

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Flip Electronics

USA . 173,620 parts In-Stock

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Vyrian

USA . 5,400 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,829 parts In-Stock

1+ parts

$0.078

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$0.078

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Corohmni

South Africa . 148 parts In-Stock

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$0.084

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148

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Component Stockers USA

USA . 9 parts In-Stock

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$0.350

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9

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Native Components

USA . 903 parts In-Stock

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$0.915

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903

$0.915

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Northwest PG Solutions

USA . 409 parts In-Stock

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$1.007

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409

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Kepictronics

USA . 72,540 parts In-Stock

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Continental Prestige Electronics

USA . 20,007 parts In-Stock

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$0.084

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A-Z Elektronik GmbH

Germany . 6,554 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,369 parts In-Stock

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4,369

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SupplyDigital Components

Austria . 1,954 parts In-Stock

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Problanco Electronics

Mexico . 1,166 parts In-Stock

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UHIMA Technologies

Türkiye . 762 parts In-Stock

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Kulean Microsystems

USA . 461 parts In-Stock

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461

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TANS Electronics

Latvia . 383 parts In-Stock

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383

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Overview

Enhance your electronic devices with the ESD7361XV2T1G by Onsemi, a top-of-the-line transient suppression device that guarantees superior quality and reliability. As a leading manufacturer in the industry, Onsemi prioritizes innovation and precision in every product they create. This versatile component is perfect for a wide range of applications, providing customers with unmatched protection against voltage spikes and surges. Trust in the value, benefits, and advantages that this exceptional product brings to your projects, ensuring optimal performance and peace of mind. Elevate your electronics with Onsemi's ESD7361XV2T1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides stability and durability to the transient suppression device, ensuring long-term reliability.

Maximum Reverse Current: 1 uA

The low maximum reverse current ensures efficient protection against transient voltage spikes while minimizing power consumption.

Maximum Clamping Voltage: 34 V

The high maximum clamping voltage indicates the device's ability to effectively limit the voltage levels during a transient event, protecting sensitive electronics.

Reference Standard: IEC-61000-4-2, 4-4, 4-5

Compliance with international standards ensures the device's performance and reliability in transient voltage suppression applications.

Technical Specifications

Transient Suppression Devices ESD7361XV2T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

16.5 V

Maximum Clamping Voltage:

34 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

ESD7361XV2T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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