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P6SMB75CAT3G

Onsemi

P6SMB75CAT3G by Onsemi

P6SMB75CAT3G by Onsemi is a Zener diode with 600W peak power dissipation, 75V breakdown voltage, and 103V clamping voltage. It is used for transient suppression in electronic circuits to protect against voltage spikes. The device comes in a small outline package with dual terminals for surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 36,000 parts In-Stock

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Vyrian

USA . 7,491 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 447 parts In-Stock

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TANS Electronics

Latvia . 8,242 parts In-Stock

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Kulean Microsystems

USA . 7,703 parts In-Stock

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SupplyDigital Components

Austria . 4,193 parts In-Stock

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Problanco Electronics

Mexico . 3,983 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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Overview

Experience the superior quality of Onsemi with the P6SMB75CAT3G Transient Suppression Device. Protect your electronic components from voltage spikes and surges with this reliable product. Whether you're in the automotive, telecommunications, or consumer electronics industry, this device offers maximum protection and peace of mind. Trust in Onsemi's expertise and innovation to keep your equipment safe and running smoothly. Upgrade to the P6SMB75CAT3G today for unmatched performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the internal components of the device.

Config: SINGLE

Simplifies installation and reduces complexity.

Surface Mount: YES

Easy to mount on circuit boards, saving space and simplifying manufacturing processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Capable of handling high power surges, providing reliable protection for sensitive electronics.

Nominal Breakdown Voltage: 75 V

Provides effective protection against overvoltage conditions.

Package Shape: RECTANGULAR

Compact design suitable for various applications.

No. of Terminals: 2

Simplifies the wiring process and reduces possible points of failure.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight design, suitable for space-constrained applications.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance.

Terminal Position: DUAL

Allows for flexibility in installation and connection options.

Maximum Power Dissipation: 0.55 W

Efficient power handling capabilities, ensuring reliability and longevity.

Minimum Breakdown Voltage: 71.3 V

Provides a good safety margin against potential voltage spikes.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes.

Maximum Breakdown Voltage: 78.8 V

Provides additional protection against overvoltage conditions.

Reference Standard: UL RECOGNIZED

Meets industry standards for safety and quality.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression applications, ensuring effective protection.

Technology: ZENER

Zener diodes provide precise voltage regulation, ideal for protecting sensitive electronics.

Terminal Form: C BEND

Easy to solder and secure connections.

Maximum Repetitive Peak Reverse Voltage: 64.1 V

Provides protection against repetitive voltage spikes.

Polarity: BIDIRECTIONAL

Protects against voltage spikes in both directions.

Maximum Clamping Voltage: 103 V

Limits the output voltage during a surge, protecting downstream components.

Diode Element Material: SILICON

Offers good performance characteristics for transient suppression applications.

Technical Specifications

Transient Suppression Devices P6SMB75CAT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

78.8 V

Minimum Breakdown Voltage:

71.3 V

Nominal Breakdown Voltage:

75 V

Maximum Clamping Voltage:

103 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

64.1 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

P6SMB75CAT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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