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NCP362BMUTBG

Onsemi

NCP362BMUTBG by Onsemi

NCP362BMUTBG by Onsemi is a 10-terminal TRANS VOLTAGE SUPPRESSOR DIODE with 5.4V breakdown voltage, ideal for transient suppression applications. With avalanche technology and unidirectional polarity, it offers reliable protection up to 150 °C operating temperature in a small outline package. Suitable for surface mount designs requiring high-performance diode elements.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 51,000 parts In-Stock

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Vyrian

USA . 6,567 parts In-Stock

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Digiode

USA . 1,245 parts In-Stock

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AZTECH Wire

Italy . 862 parts In-Stock

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Microchip USA

USA . 3,246 parts In-Stock

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SupplyDigital Components

Austria . 3,180 parts In-Stock

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Kulean Microsystems

USA . 2,623 parts In-Stock

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Corphita

USA . 2,387 parts In-Stock

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TANS Electronics

Latvia . 2,304 parts In-Stock

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Problanco Electronics

Mexico . 1,704 parts In-Stock

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Corohmni

South Africa . 336 parts In-Stock

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Overview

Elevate your electronics with the NCP362BMUTBG by Onsemi, a top-of-the-line transient suppression device designed to protect your circuits from voltage spikes. With Onsemi's reputation for high-quality components, you can trust that this product delivers superior performance and reliability. Ideal for a wide range of applications, this diode offers unmatched value and benefits to customers looking for effective and efficient protection for their electronic devices. Upgrade your circuit protection with the NCP362BMUTBG and enjoy peace of mind knowing your equipment is safeguarded against unexpected power surges.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy installation onto PCBs, saving space and increasing efficiency in assembly.

Package Shape: RECTANGULAR

Rectangular shape offers easier handling and a more compact form factor for integration into various circuit designs.

No. of Terminals: 10

More terminals provide flexibility in connecting the device within the circuit, allowing for complex configurations if needed.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the device can withstand harsh environmental conditions and maintain optimal performance.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode offers efficient protection against voltage transients and spikes, safeguarding electronic components in the circuit.

Technology: AVALANCHE

Avalanche technology provides fast response times and high surge handling capability, enhancing the overall protection performance of the device.

Maximum Repetitive Peak Reverse Voltage: 5 V

High maximum repetitive peak reverse voltage ensures effective suppression of voltage spikes and transients within the specified range.

Polarity: UNIDIRECTIONAL

Unidirectional polarity directs transient currents in one direction, offering precise protection and preventing damage to sensitive components in the circuit.

Diode Element Material: SILICON

Silicon diode element material provides consistent performance and durability, making the device suitable for long-term use in demanding applications.

Technical Specifications

Transient Suppression Devices NCP362BMUTBG attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

5.4 V

Diode Element Material:

SILICON

JESD-30 Code:

R-XDSO-N10

JESD-609 Code:

e3

No. of Terminals:

10

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NCP362BMUTBG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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