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P6SMB11AT3G

Onsemi

P6SMB11AT3G by Onsemi

P6SMB11AT3G by Onsemi is a Zener technology TRANS VOLTAGE SUPPRESSOR DIODE with 600W power dissipation, 11V breakdown voltage, and 15.6V clamping voltage. It is used for transient suppression in electronic circuits to protect against voltage spikes and surges.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 63,000 parts In-Stock

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Vyrian

USA . 6,628 parts In-Stock

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Digiode

USA . 1,112 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 785 parts In-Stock

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$14.810

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785

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 6,231 parts In-Stock

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SupplyDigital Components

Austria . 4,432 parts In-Stock

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TANS Electronics

Latvia . 4,197 parts In-Stock

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Kulean Microsystems

USA . 3,226 parts In-Stock

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Corphita

USA . 1,692 parts In-Stock

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UHIMA Technologies

Türkiye . 264 parts In-Stock

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Corohmni

South Africa . 138 parts In-Stock

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Overview

Discover the reliable protection of the P6SMB11AT3G by Onsemi, a top-notch transient suppression device that offers peace of mind against voltage spikes and surges. With Onsemi's trusted reputation for quality and innovation, this product ensures superior performance in a variety of applications. Whether safeguarding sensitive electronics or enhancing system reliability, the P6SMB11AT3G delivers exceptional value with its high power dissipation and precise breakdown voltage. Stay ahead of the curve with this cutting-edge solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection against mechanical stress and environmental factors, ensuring durability and reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort.

Nominal Breakdown Voltage: 11 V

Provides effective protection by clamping voltage at a safe level to prevent damage to sensitive components.

Maximum Power Dissipation: 0.55 W

Can handle high levels of power without overheating, ensuring stable performance under challenging conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for suppressing voltage spikes and transients, offering reliable protection for electronic devices.

Technical Specifications

Transient Suppression Devices P6SMB11AT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

11.6 V

Minimum Breakdown Voltage:

10.5 V

Nominal Breakdown Voltage:

11 V

Maximum Clamping Voltage:

15.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

9.4 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

P6SMB11AT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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