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MMQA24VT1G

Onsemi

MMQA24VT1G by Onsemi

MMQA24VT1G by Onsemi is a transient suppression device with common anode configuration, 4 elements, and max power dissipation of 0.225W. It has a breakdown voltage of 24V and is ideal for protecting electronic circuits from voltage spikes in applications such as automotive electronics and industrial control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Zilex Electronics Inc.

Canada . 33,000 parts In-Stock

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Inventory MP

USA . 22,093 parts In-Stock

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 12,432 parts In-Stock

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Bristol Electronics

USA . 4,587 parts In-Stock

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Dan-Mar Components

USA . 4,587 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,937 parts In-Stock

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Digiode

USA . 2,296 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 1,152 parts In-Stock

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$15.570

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Component Stockers USA

USA . 632 parts In-Stock

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$99.990

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Kepictronics

USA . 72,540 parts In-Stock

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Metaverse IC Inc.

Canada . 66,540 parts In-Stock

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Perfect Parts

USA . 15,723 parts In-Stock

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TANS Electronics

Latvia . 7,216 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 5,542 parts In-Stock

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SupplyDigital Components

Austria . 4,740 parts In-Stock

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Kulean Microsystems

USA . 4,489 parts In-Stock

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Corphita

USA . 908 parts In-Stock

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Corohmni

South Africa . 500 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 386 parts In-Stock

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Glotronic Ltd.

UK . 309 parts In-Stock

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UHIMA Technologies

Türkiye . 194 parts In-Stock

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Overview

Experience superior protection with the MMQA24VT1G by Onsemi, a top-notch transient suppression device that guarantees reliability and durability. Manufactured by the trusted brand Onsemi, this product offers peace of mind against voltage spikes, making it ideal for a wide range of applications. From safeguarding sensitive electronics to ensuring system integrity, the MMQA24VT1G delivers unmatched quality and performance. Invest in the best with Onsemi and elevate your protection needs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability, making the device suitable for various applications.

Nominal Breakdown Voltage: 24 V

Offers effective protection by clamping voltage at a safe level to prevent damage to connected devices.

Maximum Reverse Current: 0.075 uA

Ensures minimal leakage current, enhancing the efficiency of the transient suppression device.

Maximum Power Dissipation: 0.225 W

Can handle high peak power dissipation, making it robust and reliable during transient events.

Polarity: UNIDIRECTIONAL

Provides protection in one direction, ensuring that voltage spikes are clamped effectively for sensitive electronics.

Technical Specifications

Transient Suppression Devices MMQA24VT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

25.2 V

Minimum Breakdown Voltage:

22.8 V

Nominal Breakdown Voltage:

24 V

Maximum Clamping Voltage:

34.6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

18 V

Maximum Reverse Current:

.075 uA

Reverse Test Voltage:

18 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMQA24VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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