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MMQA20VT3

Onsemi

MMQA20VT3 by Onsemi

The Onsemi MMQA20VT3 is a transient suppression device with 4 common anode elements, offering a max non-repetitive peak reverse power dissipation of 150W. With a breakdown voltage of 19V and unidirectional polarity, it is ideal for protecting electronic circuits from voltage spikes in applications requiring high surge protection levels.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 39,895 parts In-Stock

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Vyrian

USA . 2,416 parts In-Stock

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Digiode

USA . 635 parts In-Stock

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635

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Component Stockers USA

USA . 664 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 6,859 parts In-Stock

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SupplyDigital Components

Austria . 6,561 parts In-Stock

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Problanco Electronics

Mexico . 3,101 parts In-Stock

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Kulean Microsystems

USA . 2,622 parts In-Stock

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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Corphita

USA . 897 parts In-Stock

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Corohmni

South Africa . 488 parts In-Stock

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Overview

Unlock the power of protection with the MMQA20VT3 by Onsemi. This top-tier transient suppression device boasts unparalleled quality and reliability, thanks to its manufacturer's reputation for excellence. Ideal for a wide range of applications, this product offers customers peace of mind knowing their electronics are safeguarded from voltage spikes and surges. Experience the value and benefits of this advanced technology, providing robust protection without compromising on performance. Choose the MMQA20VT3 for superior protection and unmatched peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection, ensuring the device can withstand various environmental conditions.

Config: COMMON ANODE, 4 ELEMENTS

Common anode configuration with multiple elements allows for efficient transient suppression across multiple channels or circuits.

Surface Mount: YES

Surface mount capability makes installation easy and convenient, saving time and effort during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High power dissipation capacity ensures reliable protection against transient voltage spikes.

Nominal Breakdown Voltage: 19 V

Nominal breakdown voltage of 19 V offers effective protection against voltage surges within the specified range.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into existing circuit layouts or designs.

No. of Terminals: 6

With 6 terminals, the device offers flexibility in connectivity options for different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates compact device placement in crowded PCB layouts.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in demanding environments with elevated temperatures.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for reliable operation in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and electrical conductivity for secure connections.

Terminal Position: DUAL

Dual terminal position enables versatile mounting options to suit various circuit layouts or configurations.

Maximum Power Dissipation: 0.225 W

High power dissipation capacity ensures reliable protection against transient voltage spikes.

Minimum Breakdown Voltage: 19 V

Minimum breakdown voltage of 19 V ensures protection against voltage surges above this threshold.

Maximum Breakdown Voltage: 21 V

Maximum breakdown voltage of 21 V provides an additional safety margin for protection against higher voltage transients.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Transient voltage suppressor diode type ensures efficient suppression of voltage spikes to protect sensitive electronic components.

Technology: AVALANCHE

Avalanche technology enhances the device's ability to handle high transient currents and voltages effectively.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy surface mount soldering for secure and reliable connections.

No. of Elements: 4

4 elements provide enhanced transient voltage suppression capabilities across multiple channels or circuits.

Maximum Repetitive Peak Reverse Voltage: 15 V

Maximum repetitive peak reverse voltage of 15 V ensures protection against voltage spikes within this range.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that voltage spikes are suppressed in one direction only, protecting sensitive components from damage.

Maximum Clamping Voltage: 28.6 V

Maximum clamping voltage of 28.6 V limits the voltage spike level to a safe threshold to prevent damage to downstream components.

Diode Element Material: SILICON

Silicon diode element material provides robust performance and reliable transient voltage suppression capabilities.

Technical Specifications

Transient Suppression Devices MMQA20VT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

21 V

Minimum Breakdown Voltage:

19 V

Nominal Breakdown Voltage:

19 V

Maximum Clamping Voltage:

28.6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMQA20VT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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