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MMQA33VT1G

Onsemi

MMQA33VT1G by Onsemi

MMQA33VT1G by Onsemi is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 33V, max power dissipation of 0.225W, and operates b/w -55 to 150 °C. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 39,000 parts In-Stock

1+ parts

-

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$0.091

39,000

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$0.091

Arrow

USA . 36,000 parts In-Stock

1+ parts

-

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$0.073

36,000

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$0.073

Verical

USA . 36,000 parts In-Stock

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$0.073

36,000

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$0.073

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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$0.132

3,000

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$0.132

Rochester

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.099

1k+ parts

$0.082

10k+ parts

$0.073

1,000

-

$0.099

$0.082

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 563 parts In-Stock

1+ parts

$0.228

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-

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563

$0.228

-

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Maritex

Poland . 112 parts In-Stock

1+ parts

$0.232

100+ parts

$0.124

1k+ parts

$0.117

10k+ parts

$0.106

112

$0.232

$0.124

$0.117

$0.106

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.447

100+ parts

-

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100

$0.447

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Chip Stock

USA . 349,500 parts In-Stock

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349,500

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Vyrian

USA . 11,327 parts In-Stock

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11,327

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Cyclops Electronics Ltd

UK . 9,072 parts In-Stock

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9,072

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Bristol Electronics

USA . 6,000 parts In-Stock

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6,000

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.245

6,000

-

-

-

$0.245

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.187

3,000

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$0.187

ComSIT Distribution GmbH

Germany . 781 parts In-Stock

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781

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Sunrise Surplus Inc.

USA . 92 parts In-Stock

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92

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 29,831 parts In-Stock

1+ parts

$0.058

100+ parts

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29,831

$0.058

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Semicontronic

India . 29,628 parts In-Stock

1+ parts

$0.058

100+ parts

$0.057

1k+ parts

$0.056

10k+ parts

-

29,628

$0.058

$0.057

$0.056

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Corohmni

South Africa . 374 parts In-Stock

1+ parts

$0.077

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374

$0.077

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Aztec Data Supply Inc.

USA . 3,799 parts In-Stock

1+ parts

$0.089

100+ parts

-

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3,799

$0.089

-

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.123

100+ parts

$0.112

1k+ parts

$0.101

10k+ parts

-

350

$0.123

$0.112

$0.101

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Corphita

USA . 1,742 parts In-Stock

1+ parts

$0.216

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1,742

$0.216

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Argo Parts USA

USA . 1,750 parts In-Stock

1+ parts

$0.447

100+ parts

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$0.434

1,750

$0.447

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$0.434

Perfect Parts

USA . 446,940 parts In-Stock

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446,940

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S.R.D Solutions

India . 58,000 parts In-Stock

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Eastek

USA . 21,000 parts In-Stock

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Lixinc

USA . 12,621 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 4,755 parts In-Stock

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4,755

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SupplyDigital Components

Austria . 3,884 parts In-Stock

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3,884

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Problanco Electronics

Mexico . 3,461 parts In-Stock

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3,461

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Continental Prestige Electronics

USA . 2,515 parts In-Stock

1+ parts

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100+ parts

$0.191

1k+ parts

$0.101

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2,515

-

$0.191

$0.101

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Kulean Microsystems

USA . 2,355 parts In-Stock

1+ parts

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2,355

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.439

1k+ parts

$0.425

10k+ parts

$0.416

2,000

-

$0.439

$0.425

$0.416

UHIMA Technologies

Türkiye . 112 parts In-Stock

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112

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Overview

Discover the MMQA33VT1G by Onsemi, a powerful transient suppression device that offers superior quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product provides exceptional protection against voltage spikes and surges. Ideal for a wide range of applications, this common anode device with 4 elements is designed to keep your electronics safe and secure. With a nominal breakdown voltage of 33V and maximum clamping voltage of 48.6V, customers can trust that their devices are safeguarded at all times. Don't compromise on protection - choose the MMQA33VT1G for peace of mind and uninterrupted performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transient suppression device, making it suitable for various environments.

Nominal Breakdown Voltage: 33 V

The higher nominal breakdown voltage ensures effective protection against voltage spikes and transients, increasing the reliability of the device.

Maximum Reverse Current: 0.075 uA

The low maximum reverse current indicates minimal leakage, ensuring efficient operation and long-term stability of the device.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the device to withstand elevated temperatures without compromising its performance, making it suitable for industrial applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures quick response time and high clamping capability, providing effective transient suppression for sensitive electronics.

Technical Specifications

Transient Suppression Devices MMQA33VT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33 V

Maximum Clamping Voltage:

48.6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

25 V

Maximum Reverse Current:

.075 uA

Reverse Test Voltage:

25 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMQA33VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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