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MMQA12VT1G

Onsemi

MMQA12VT1G by Onsemi

MMQA12VT1G by Onsemi is a transient suppression device with 4 common anode elements. It has a max power dissipation of 0.225 W and breakdown voltage of 12 V, making it ideal for protecting electronic circuits from voltage spikes in various applications. With a unidirectional polarity and avalanche technology, this diode offers reliable protection with a max clamping voltage of 17.3 V.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,197 parts In-Stock

1+ parts

$0.316

100+ parts

-

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1,197

$0.316

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Mouser Electronics

USA . 13,042 parts In-Stock

1+ parts

$0.430

100+ parts

$0.163

1k+ parts

$0.108

10k+ parts

$0.074

13,042

$0.430

$0.163

$0.108

$0.074

DigiKey

USA . 20,646 parts In-Stock

1+ parts

$0.440

100+ parts

$0.171

1k+ parts

$0.113

10k+ parts

$0.080

20,646

$0.440

$0.171

$0.113

$0.080

EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

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6,000

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Master Electronics

USA . 6,000 parts In-Stock

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$0.062

6,000

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$0.062

Verical

USA . 6,000 parts In-Stock

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$0.076

6,000

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$0.076

Farnell

UK . 1,307 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.079

10k+ parts

$0.060

1,307

-

-

$0.079

$0.060

Element14

Singapore . 1,307 parts In-Stock

1+ parts

-

100+ parts

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$0.102

10k+ parts

$0.085

1,307

-

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$0.102

$0.085

Rochester

USA . 894 parts In-Stock

1+ parts

-

100+ parts

$0.078

1k+ parts

$0.064

10k+ parts

$0.057

894

-

$0.078

$0.064

$0.057

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,898 parts In-Stock

1+ parts

$0.054

100+ parts

-

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1,898

$0.054

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Digiode

USA . 918 parts In-Stock

1+ parts

$0.061

100+ parts

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918

$0.061

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TME

Poland . 2,500 parts In-Stock

1+ parts

$0.280

100+ parts

$0.096

1k+ parts

$0.079

10k+ parts

-

2,500

$0.280

$0.096

$0.079

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Cyclops Electronics Ltd

UK . 126,662 parts In-Stock

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126,662

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ComSIT Distribution GmbH

Germany . 15,660 parts In-Stock

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15,660

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ComSIT USA

USA . 15,000 parts In-Stock

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15,000

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IBS Electronics

USA . 9,000 parts In-Stock

1+ parts

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$0.078

9,000

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$0.078

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.193

6,000

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$0.193

PC Components Company LLC

USA . 2,079 parts In-Stock

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2,079

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Bristol Electronics

USA . 2,079 parts In-Stock

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2,079

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LIBRA Elektronik GmbH

Germany . 1,889 parts In-Stock

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1,889

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Distributors (Availability)

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Corohmni

South Africa . 222 parts In-Stock

1+ parts

$0.054

100+ parts

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222

$0.054

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Corphita

USA . 178 parts In-Stock

1+ parts

$0.058

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178

$0.058

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Continental Prestige Electronics

USA . 3,660 parts In-Stock

1+ parts

$0.127

100+ parts

$0.092

1k+ parts

$0.076

10k+ parts

$0.064

3,660

$0.127

$0.092

$0.076

$0.064

Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Perfect Parts

USA . 51,090 parts In-Stock

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51,090

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Kepictronics

USA . 27,936 parts In-Stock

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27,936

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ChipstoGo Electronic ltd

UK . 14,488 parts In-Stock

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Kulean Microsystems

USA . 7,716 parts In-Stock

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TANS Electronics

Latvia . 6,659 parts In-Stock

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6,659

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Problanco Electronics

Mexico . 4,422 parts In-Stock

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SupplyDigital Components

Austria . 3,871 parts In-Stock

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3,871

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Eastek

USA . 3,000 parts In-Stock

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$0.160

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3,000

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$0.160

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Lixinc

USA . 2,559 parts In-Stock

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2,559

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Assy Fe

Spain . 913 parts In-Stock

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913

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UHIMA Technologies

Türkiye . 743 parts In-Stock

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743

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Overview

Looking for reliable transient suppression devices? Look no further than the MMQA12VT1G by Onsemi. With a common anode configuration and four elements, this product offers superior protection against voltage spikes. Ideal for a wide range of applications, this small outline package is designed to withstand extreme temperatures while providing a maximum clamping voltage of 17.3V. Trust Onsemi's quality manufacturing and choose the MMQA12VT1G for your next project to ensure optimal performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection and durability for the device, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High power dissipation capability makes this device suitable for handling transient voltage spikes effectively.

Nominal Breakdown Voltage: 12 V

The breakdown voltage ensures that the device activates and protects the circuit when the voltage exceeds this level.

Maximum Reverse Current: 0.075 uA

Low reverse current ensures minimal power loss and efficient operation of the device.

Maximum Operating Temperature: 150 °C

Wide temperature range allows this device to function reliably in various operating conditions.

Technology: AVALANCHE

Avalanche technology provides superior transient voltage suppression performance, making this device highly effective in protecting sensitive components.

Technical Specifications

Transient Suppression Devices MMQA12VT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

12.6 V

Minimum Breakdown Voltage:

11.4 V

Nominal Breakdown Voltage:

12 V

Maximum Clamping Voltage:

17.3 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

9.1 V

Maximum Reverse Current:

.075 uA

Reverse Test Voltage:

9.1 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMQA12VT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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