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MMQA13VT1

Onsemi

MMQA13VT1 by Onsemi

MMQA13VT1 by Onsemi is a transient suppression device with common anode configuration, 4 elements, and 150W peak reverse power dissipation. It is used for surge protection in applications requiring a breakdown voltage of 13V, operating temperature range from -55 to 150 °C, and max clamping voltage of 18.6V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,991 parts In-Stock

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Vyrian

USA . 460 parts In-Stock

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Nova Conductors

Japan . 16 parts In-Stock

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Ampacity Inc.

Singapore . 571 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 460 parts In-Stock

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$9.212

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Lixinc

USA . 12,813 parts In-Stock

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Problanco Electronics

Mexico . 8,011 parts In-Stock

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TANS Electronics

Latvia . 7,393 parts In-Stock

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Kulean Microsystems

USA . 4,254 parts In-Stock

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Continental Prestige Electronics

USA . 3,963 parts In-Stock

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SupplyDigital Components

Austria . 3,673 parts In-Stock

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Argo Parts USA

USA . 2,803 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 775 parts In-Stock

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Corohmni

South Africa . 108 parts In-Stock

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UHIMA Technologies

Türkiye . 36 parts In-Stock

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Overview

Experience superior quality and reliability with the Onsemi MMQA13VT1 transient suppression device. As a leading manufacturer in the industry, Onsemi guarantees top-notch performance and durability for all your electronic protection needs. Ideal for a wide range of applications, this product offers unbeatable value by safeguarding your devices from voltage spikes and surges. Trust in the MMQA13VT1 to provide peace of mind and uninterrupted functionality, making it the perfect choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time during assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High power dissipation capability ensures reliable protection against transient voltage spikes.

Nominal Breakdown Voltage: 13 V

Effectively clamps down voltage spikes above this level, protecting connected devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a variety of industrial applications.

Minimum Operating Temperature: -55 °C

Able to function in extremely low temperatures, providing protection in harsh environments.

Terminal Finish: TIN LEAD

Provides a reliable electrical connection and helps prevent corrosion on the terminals.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed to suppress transient voltages and protect sensitive components in circuits.

Technical Specifications

Transient Suppression Devices MMQA13VT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

13.7 V

Minimum Breakdown Voltage:

12.4 V

Nominal Breakdown Voltage:

13 V

Maximum Clamping Voltage:

18.6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

9.8 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMQA13VT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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