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MMQA33VT1

Onsemi

MMQA33VT1 by Onsemi

MMQA33VT1 by Onsemi is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 33V, max power dissipation of 150W, and operates b/w -55 to 150°C. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 354,500 parts In-Stock

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354,500

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Digiode

USA . 1,348 parts In-Stock

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Bristol Electronics

USA . 860 parts In-Stock

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860

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Vyrian

USA . 300 parts In-Stock

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300

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Ampacity Inc.

Singapore . 1,149 parts In-Stock

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$2.010

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$2.010

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AZTECH Wire

Italy . 300 parts In-Stock

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$11.881

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300

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TANS Electronics

Latvia . 6,112 parts In-Stock

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Problanco Electronics

Mexico . 4,916 parts In-Stock

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Argo Parts USA

USA . 3,472 parts In-Stock

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SupplyDigital Components

Austria . 3,078 parts In-Stock

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Kulean Microsystems

USA . 2,793 parts In-Stock

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Continental Prestige Electronics

USA . 2,459 parts In-Stock

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Corphita

USA . 885 parts In-Stock

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UHIMA Technologies

Türkiye . 359 parts In-Stock

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359

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Aranea Global

USA . 100 parts In-Stock

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Corohmni

South Africa . 92 parts In-Stock

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Spain . 25 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the MMQA33VT1 by Onsemi, a leading manufacturer in the industry of Transient Suppression Devices. This versatile product offers superior protection against voltage spikes and surges, making it ideal for a wide range of applications. With its common anode configuration and small outline package style, this device provides efficient and effective transient suppression, giving you peace of mind and ensuring the safety of your electronics. Trust in the value and benefits that Onsemi's MMQA33VT1 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the components inside, making the product reliable for long-term use.

Config: COMMON ANODE, 4 ELEMENTS

The common anode configuration with 4 elements allows for efficient voltage suppression and protection against transient spikes in the circuit.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

With a high maximum non-repetitive peak reverse power dissipation of 150 W, this product can handle sudden high-power surges effectively without damage.

Nominal Breakdown Voltage: 33 V

The nominal breakdown voltage of 33 V ensures reliable protection against overvoltage conditions, safeguarding sensitive electronic components in the circuit.

Surface Mount: YES

Being surface mountable, this product can be easily mounted on PCBs, saving space and simplifying assembly process.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the product can perform effectively in various environmental conditions without overheating.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C allows the product to function in cold environments without any issues, making it versatile in different applications.

Technical Specifications

Transient Suppression Devices MMQA33VT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33 V

Maximum Clamping Voltage:

48.6 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

25 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMQA33VT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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